High removal rate chemical mechanical polishing pads and methods of making
A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm 3 .
1. A chemical mechanical (CMP) polishing pad for polishing a substrate chosen from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate comprising a polishing layer adapted for polishing the substrate which is a polyurethane reaction product of a reaction mixture consisting essentially of (i) polytetramethylene ether glycol polyisocyanate prepolymer, wherein the prepolymer has an unreacted 8 to 10 wt. % NCO content, in the amount of from 15 to 60 wt. % polyisocyanate prepolymer, based on the total weight of all diisocyanates, polyisocyanates and polyisocyanate prepolymers in the reaction mixture, (ii) blocked polyisocyanate prepolymer that contains 3,5-dimethylpyrazole blocking agent and has a deblocking temperature of from 80 to 160° C. in the amount of from 40 to 85 wt. % based on the total weight of all diisocyanates, polyisocyanates and polyisocyanate prepolymers in the reaction mixture, and (iii) 4,4′-methylenebis(3-chloro-2,6-diethylaniline) curative, wherein the reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes, further wherein, the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less and, still further wherein, the polishing layer exhibits a density of from 0.6 to 1.2 g/cm 3 and wherein the polishing layer includes polymeric microspheres and the polymeric microspheres comprise shell walls of either polyacrylonitrile or polyacrylonitrile copolymer.
2. The CMP polishing pad as claimed in claim 1 , wherein the polishing pad has a free isocyanate content of 0.1 wt. %, or less, based on the total weight of the polyurethane reaction product.
3. The CMP polishing pad as claimed in claim 1 , wherein the stoichiometric ratio of the sum of the amine (NH 2 ) groups and the hydroxyl (OH) groups) in the (iii) amine curative plus any free hydroxyl groups in the reaction mixture to the unreacted and blocked isocyanate groups in reaction mixture is from 0.80:1 to 1.20:1.