MIS contact structure with metal oxide conductor
An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10 −5 -10 −7 Ω-cm 2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×10 19 cm −3 and less than approximately 10 −8 Ω-cm 2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 10 20 cm −3 .
1. An electrical contact structure, comprising a conductor; a semiconductor layer; and an interfacial dielectric layer of less than 4 nm thickness disposed between and in contact with both the conductor and the semiconductor layer, wherein the conductor is a conductive metal oxide and the interfacial dielectric layer comprises an oxide of a metal or an oxide of a semiconductor, and the electrical contact structure has a specific contact resistivity of less than or equal to approximately 10 −5 -10 −7 Ω-cm 2 .
2. The electrical contact structure of claim 1 wherein the interfacial dielectric layer comprises a material that would be an insulator or a semiconductor in its bulk state.
3. The electrical contact structure of claim 1 wherein the interfacial dielectric layer has a thickness in the range 0.2 nm to 4 nm and the conductive metal oxide layer has a thickness in the range 0.5 nm to 3 nm.
4. The electrical contact structure of claim 1 wherein the interfacial dielectric layer further includes a separation layer.
5. The electrical contact structure of claim 1 wherein the junction between the conductive metal oxide layer and the interfacial dielectric layer is chemically stable up to a temperature of 400° C.
6. The electrical contact structure of claim 1 wherein the junction between the conductive metal oxide layer and the interfacial dielectric layer is chemically stable up to a temperature of 450° C.
7. The electrical contact structure of claim 1 wherein there is no chemical reaction between the conductive metal oxide layer and the interfacial dielectric layer that substantially consumes the interfacial dielectric up to a temperature of 450° C.
8. The electrical contact structure of claim 1 wherein the contact resistivity of the electrical contact structure remains less than or equal to approximately 10 −5 -10 −7 Ω-cm 2 after the structure is heated to a temperature of 400° C.
9. The electrical contact structure of claim 8 wherein the semiconductor layer is a doped semiconductor with a doping larger than 10 19 cm −3 .
10. The electrical contact structure of claim 1 wherein the contact resistivity of the electrical contact structure remains less than or equal to approximately 10 −5 -10 −7 Ω-cm 2 after the structure is heated to a temperature of 450° C.
11. The electrical contact structure of claim 1 wherein the semiconductor layer adjacent the interfacial dielectric layer is doped n-type to an active concentration greater than approximately 10 20 cm −3 and the electrical contact structure has a specific contact resistivity of less than approximately 1×10 −8 Ω-cm 2 .
12. The electrical contact structure of claim 1 wherein the conductive metal oxide layer is contacted by a thin metal layer of a metal different than that of the conductive metal oxide layer.
13. The electrical contact structure of claim 1 wherein the conductive metal oxide layer is one of WO 2 or a mixture of tungsten oxides with compositions ranging between WO 2 and WO 2.95 , (Nb,Sr)TiO 3 , (Ba,Sr)TiO 3 , SrRuO 3 , MoO 2 , OsO 2 , RhO 2 , RuO 2 , IrO 2 , ReO 3 , ReO 2 , LaCuO 3 , Ti 2 O 3 , TiO, V 2 O 3 , VO, Fe 3 O 4 , ZnO, InSnO, ITO, AZO, and CrO 2 , or any of their doped or non-stochiometric variants.
14. The electrical contact structure of claim 1 wherein the interfacial dielectric layer comprises at least one of WO 3 , TiO 2 , SrTiO 3 , MgO, Al 2 O 3 , HfO 2 , ZrO 2 , Ta 2 O 5 , V 2 O 5 , BaZrO 3 , La 2 O 3 , Y 2 O 3 , HfSiO 4 , ZrSiO 4 , CoO, NiO, ZnO, GaO, SiO 2 , SrTiO 3 , (Ba,Sr)TiO 3 , ZnO, silicon oxide, and germanium oxide, or any of their doped or non-stochiometric variants.
15. The electrical contact structure of claim 1 wherein the semiconductor layer comprises a semiconductor including one or more of the group IV elements silicon, germanium, carbon, or tin, or carbon nanotubes.
16. The electrical contact structure of claim 1 wherein the interfacial dielectric layer comprises at least one of titanium silicate, TiSi x O y , or titanium silicon oxynitride.
17. The electrical contact structure of claim 1 wherein the interfacial dielectric layer comprises an oxide of titanium and the conductive metal oxide layer comprises an oxide of ruthenium.
18. The electrical contact structure of claim 17 wherein the interfacial dielectric layer comprises TiO 2 and the conductive metal oxide layer comprises RuO 2 .
19. The electrical contact structure of claim 1 wherein the interfacial dielectric layer has a thickness in the range 0.2 nm to 10 nm.