SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM
A substrate processing apparatus includes a gas supply part configured to supply at least one of a film-forming gas, a first inert gas, and a second inert gas supplied at a temperature higher than that of the first inert gas into a process chamber in which a substrate is processed; and a control part configured to control the gas supply part to perform a film-forming process of supplying the film-forming gas and the first inert gas from the gas supply part into the process chamber to process the substrate, and to control a deposited film removing process of directly supplying the second inert gas having a temperature higher than that of the first inert gas from the gas supply part to the process chamber, in a state where there is no substrate in the process chamber, to remove a deposited film deposited within the process chamber.
1 . A substrate processing apparatus, comprising:
a gas supply part configured to supply at least one of a film-forming gas, a first inert gas, and a second inert gas supplied at a temperature higher than that of the first inert gas into a process chamber in which a substrate is processed; and
a control part configured to control the gas supply part to perform a film-forming process of supplying the film-forming gas and the first inert gas from the gas supply part into the process chamber to process the substrate, and to perform a deposited film removing process of directly supplying the second inert gas having a temperature higher than that of the first inert gas from the gas supply part to the process chamber, in a state where there is no substrate in the process chamber, to remove a deposited film deposited within the process chamber.
2 . The apparatus of claim 1 , wherein the second inert gas is supplied at a temperature to easily generate a crack on the deposited film to facilitate a delamination, by generating a temperature gradient between the deposited film and a base member of the deposited film, a temperature of the deposited film being higher than a temperature of the base member.
3 . The apparatus of claim 2 , wherein the temperature gradient ranges from 50 to 200 degrees C.
4 . The apparatus of claim 1 , wherein the control part is configured to control the gas supply part to alternately supply the first inert gas and the second inert gas, the first inert gas having a temperature lower than that of the second inert gas.
5 . The apparatus of claim 1 , wherein a temperature of the second inert gas when the deposited film removing process is terminated is lower than a temperature when the deposited film removing process is started.
6 . The apparatus of claim 1 , wherein a temperature of the second inert gas gradually decreases from a time when the deposited film removing process is started to a time when the deposited film removing process is terminated.
7 . The apparatus of claim 1 , further comprising:
a first heating device configured to heat the process chamber;
a second heating device configured to heat the second inert gas; and
a third heating device configured to heat a gas supplied in at least the film-forming process.
8 . A substrate processing apparatus, comprising:
a gas supply part configured to supply at least one of a film-forming gas, a first inert gas, and a second inert gas supplied at a temperature higher than that of the first inert gas into a process chamber in which a substrate is processed;
a memory device configured to store a program for processing at least the substrate;
an arithmetic part configured to read the program from the memory device; and
a control part including at least the memory device and the arithmetic part,
wherein the control part is configured to perform a film-forming process of the substrate by controlling the gas supply part such that the film-forming gas and the first inert gas are supplied into the process chamber through the program read from the memory device by the arithmetic part, and to perform a deposited film removing process of controlling the gas supply part to directly supply the second inert gas to the process chamber through the program read from the memory device by the arithmetic part, in a state where there is no substrate in the process chamber, to remove a deposited film deposited within the process chamber.
9 . The apparatus of claim 8 , wherein the second inert gas is supplied at a temperature making it easy to cause a crack in the deposited film to facilitate delamination, by generating a temperature gradient between the deposited film and a base member of the deposited film, a temperature of the deposited film being higher than that of the base member.
10 . The apparatus of claim 9 , wherein the temperature gradient ranges from 50 to 200 degrees C.
11 . The apparatus of claim 8 , wherein the control part is configured to control the gas supply part to alternately supply the first inert gas and the second inert gas, the first inert gas having a temperature lower than that of the second inert gas.
12 . The apparatus of claim 8 , wherein a temperature of the second inert gas when the deposited film removing process is terminated is lower than a temperature when the deposited film removing process is started.
13 . The apparatus of claim 8 , wherein a temperature of the second inert gas gradually decreases from a time when the deposited film removing process is started to a time when the deposited film removing process is terminated.
14 . The apparatus of claim 8 , further comprising:
a first heating device configured to heat the process chamber;
a second heating device configured to heat the second inert gas; and
a third heating device configured to heat a gas supplied from at least the film-forming process.
15 . A non-transitory computer-readable storage medium storing a program that causes a computer to perform a process of:
supplying a film-forming gas and a first inert gas onto a substrate within a process chamber to form a film on the substrate; and
directly supplying a second inert gas having a temperature higher than that of the first inert gas into the process chamber, in a state where there is no substrate within the process chamber, to remove a deposited film deposited within the process chamber.