Semiconductor structure with an L-shaped bottom plate

1. A semiconductor structure, the semiconductor structure comprising:

adjacent transistor structures that share a first source/drain semiconductor structure that is composed of a doped semiconductor material;

at least one of the adjacent transistor structures comprising:

a first vertical channel;

a gate encompassing at least a vertical length of the first vertical channel; and

the first source/drain semiconductor structure being connected to the first vertical channel, wherein an end of the first vertical channel abuts a horizontal surface of the first source/drain semiconductor structure such that the first source/drain semiconductor structure has a vertical side that is substantially planar with a vertical side of the first vertical channel, the first source/drain semiconductor structure extending horizontally from its vertical side farther than the first vertical channel extends from its vertical side such that a length of the horizontal surface equals a width of the source/drain semiconductor structure as measured from the vertical side to an opposite side of the first source/drain semiconductor structure, wherein the width of the source/drain semiconductor structure is greater than a width of the first vertical channel, the first source/drain semiconductor structure being located on a layer of substrate, wherein the horizontal surface is parallel to the layer of substrate at a distance, the vertical channel being perpendicular relative to the layer of substrate.

2. The semiconductor structure of claim 1 , the semiconductor structure further comprising:

a first gate structure that is in contact with at least a portion of the first vertical channel; and

a first layer of dielectric material that covers the gate, the first source/drain semiconductor structure and at least a portion of the first vertical channel.

3. The semiconductor structure of claim 1 , the semiconductor structure further comprising:

a second source/drain semiconductor structure that is in contact with the first vertical channel wherein the first gate structure is interposed between the first source/drain semiconductor structure and the second source/drain semiconductor structure.

4. The semiconductor structure of claim 1 , the semiconductor structure further comprising:

a first electrical contact that is connected to the first source/drain semiconductor structure.

5. The semiconductor structure of claim 4 , the semiconductor structure further comprising:

a second layer of dielectric material that covers at least the first source/drain semiconductor structure, wherein the first electrical contact passes through at least a portion of the second layer of dielectric material.

6. The semiconductor structure of claim 1 , wherein the first source/drain semiconductor structure comprises:

a third source/drain semiconductor structure located on the layer of substrate;

a second vertical channel connected to third source/drain semiconductor structure, the third source/drain semiconductor structure having a vertical side that is substantially planar with a vertical side of the second vertical channel, the vertical side of the first vertical channel faces vertical side of the second vertical channel;

a third vertical channel connected to the third source/drain semiconductor structure, the third source/drain semiconductor structure having a vertical side that is substantially planar with a vertical side of the third vertical channel.

7. The semiconductor structure of claim 6 , the semiconductor structure further comprising:

the second vertical channel being interposed between the first vertical channel and the third vertical channel, a distance between the first vertical channel and the second vertical channel being substantially less than and a distance between the second vertical channel and the third vertical channel.