Copper metal film, method for preparing the same, and method for forming copper interconnect for semiconductor device using the same
The present invention relates to a copper metal film to be used as a seed layer for electrodeposition for forming a copper interconnect for a semiconductor device, a method for preparing the same, and a method for forming a copper interconnect for a semiconductor device using the copper metal film.
1. A method for preparing a copper metal film, comprising:
supplying a copper aminoalkoxide-based precursor which is a liquid at a room temperature and a nitrogen element-containing gas alternately in an atomic layer deposition chamber to form a copper nitride film on a substrate; and
annealing the copper nitride film for reduction thereof to form a copper metal film.
2. The method of claim 1 ,
wherein the copper aminoalkoxide-based precursor which is a liquid at a room temperature includes Cu(dmamb) 2 to represent bis(1-dimethylamino-2-methyl-2-butoxy)copper(II).
3. The method of claim 1 ,
wherein the nitrogen element-containing gas includes a gas selected from the group of NH 3 gas, N 2 H 4 gas, N 2 gas, a mixture gas of N 2 and H 2 , plasma-activated NH 3 gas, plasma-activated N 2 H 4 gas, plasma-activated N 2 gas, a mixture gas of plasma-activated N 2 and H 2 , a mixture gas of NH 3 gas and an inert gas, a mixture gas of N 2 H 4 gas and an inert gas, a mixture gas of plasma-activated NH 3 gas and an inert gas, a mixture gas of plasma-activated N 2 H 4 gas and an inert gas, and combinations thereof.
4. The method claim 1 ,
wherein the temperature of the substrate is in a range of from 100° C. to 160° C.
5. The method of claim 1 ,
wherein the annealing is performed at a temperature of 150° C. or higher in a reducing atmosphere or vacuum.
6. The method of claim 5 ,
wherein the reducing atmosphere in which the annealing is performed includes hydrogen, argon, helium, or nitrogen gas.
7. The method of claim 1 ,
wherein the sheet resistance of the copper metal film is 500Ω/□ or less.
8. The method of claim 1 ,
wherein the thickness of the copper metal film is 10 nm or less.
9. The method of claim 1 ,
wherein the thickness of the copper metal film is from 1 nm to 10 nm, and the sheet resistance of the copper metal film is from 5Ω/□ to 500Ω/□.
10. A copper metal film, prepared by the method according to claim 1 .
11. The copper metal film of claim 10 ,
wherein the sheet resistance of the copper metal film is 500Ω/□ or less.
12. The copper metal film of claim 10 ,
wherein the thickness of the copper metal film is from 1 nm to 10 nm, and the sheet resistance of the copper metal film is from 5Ω/□ to 500Ω/□.
13. A method for forming a copper interconnect for a semiconductor device, comprising:
electrodepositing a copper on a seed layer to form a copper metal film for interconnect, wherein the seed layer is a copper metal film prepared by the method according to claim 1 .
14. The method of claim 13 ,
wherein the copper metal film formed by the electrodepositing has low surface roughness and low resistivity.
15. A copper interconnect for a semiconductor device, formed by the method according to claim 13 .
16. The copper interconnect for a semiconductor device of claim 15 ,
wherein the copper interconnect for a semiconductor device has low surface roughness and low resistivity.
17. A semiconductor device, comprising a copper interconnect for a semiconductor device according to claim 15 .
18. A composition for deposition of a copper metal film, containing the copper aminoalkoxide-based precursor which is a liquid at a room temperature.
19. The composition of claim 18 ,
wherein the composition includes Cu(dmamb) 2 to represent bis(1-dimethylamino-2-methyl-2-butoxy)copper(II).