Error correction code event detection
Methods, systems, and devices for operating a memory cell or cells are described. An error in stored data may be detected by an error correction code (ECC) operation during sensing of the memory cells used to store the data. The error may be indicated in hardware by generating a measurable signal on an output node. For example, the voltage at the output node may be changed from a first value to a second value. A device monitoring the output node may determine an error has occurred for a set of data based at least in part on the change in the signal at the output node.
1. A method of operating an electronic memory apparatus, comprising:
selecting a set of memory cells of the electronic memory apparatus for sensing;
sensing a state of each cell of the set of memory cells;
detecting an error associated with the sensed states of the set of memory cells;
changing a voltage of a node of the electronic memory apparatus from a first value to a second value in response to the error detection;
indicating that the error has been detected based at least in part on changing the voltage of the node; and
changing the voltage of the node to the first value based at least in part on a deselection of the set of memory cells, wherein the deselection occurs after determining the error has been detected.
2. The method of claim 1 , wherein sensing comprises:
comparing a voltage or current from each memory cell to a reference voltage or reference current, wherein the state of each memory cell is determined based at least in part on the comparison for each respective memory cell.
3. The method of claim 1 , wherein the error is a one bit error or a two bit error.
4. The method of claim 3 , further comprising:
determining that the error is a one bit error; and
correcting the one bit error.
5. The method of claim 1 , further comprising:
configuring, responsive to a user input, a type of error to be detected, wherein the type of error comprises a one bit error or a two bit error, or both.
6. The method of claim 1 , further comprising:
storing an indication of the detected error in a storage portion of the electronic memory apparatus.
7. The method of claim 1 , further comprising:
enabling an error detection mode, wherein the error is detected based at least in part on enabling the error detection mode.
8. A method of operating an electronic memory apparatus, comprising:
sensing a state of each cell of a set of memory cells of the electronic memory apparatus;
detecting an error associated with the sensed states of the set of memory cells;
changing a voltage of a node of the electronic memory apparatus from a first value to a second value in response to the error detection;
indicating that the error has been detected based at least in part on changing the voltage of the node;
determining that a threshold amount of time has elapsed since determining that the error has been detected; and
changing the voltage of the node to the first value based at least in part on the determination that the threshold amount of time has elapsed.
9. The method of claim 8 , wherein sensing comprises:
comparing a voltage or current from each memory cell to a reference voltage or reference current, wherein the state of each memory cell is determined based at least in part on the comparison for each respective memory cell.
10. The method of claim 8 , wherein the error is a one bit error or a two bit error.
11. The method of claim 10 , further comprising:
determining that the error is a one bit error; and
correcting the one bit error.
12. The method of claim 8 , further comprising:
configuring, responsive to a user input, a type of error to be detected, wherein the type of error comprises a one bit error or a two bit error, or both.
13. The method of claim 8 , further comprising:
storing an indication of the detected error in a storage portion of the electronic memory apparatus.
14. The method of claim 8 , further comprising:
enabling an error detection mode, wherein the error is detected based at least in part on enabling the error detection mode.
15. A method of operating an electronic memory apparatus, comprising:
sensing a state of each cell of a set of memory cells of the electronic memory apparatus;
detecting an error associated with the sensed states of the set of memory cells;
changing a voltage of a node of the electronic memory apparatus from a first value to a second value in response to the error detection;
indicating that the error has been detected based at least in part on changing the voltage of the node;
detecting another error associated with a different set of memory cells; and
maintaining the voltage of the node at the second value irrespective of the detection of the other error.
16. The method of claim 15 , wherein sensing comprises:
comparing a voltage or current from each memory cell to a reference voltage or reference current, wherein the state of each memory cell is determined based at least in part on the comparison for each respective memory cell.
17. The method of claim 15 , wherein the error is a one bit error or a two bit error.
18. The method of claim 17 , further comprising:
determining that the error is a one bit error; and
correcting the one bit error.
19. The method of claim 15 , further comprising:
configuring, responsive to a user input, a type of error to be detected, wherein the type of error comprises a one bit error or a two bit error, or both.
20. The method of claim 15 , further comprising:
storing an indication of the detected error in a storage portion of the electronic memory apparatus.
21. The method of claim 15 , further comprising:
enabling an error detection mode, wherein the error is detected based at least in part on enabling the error detection mode.
22. An electronic memory apparatus comprising:
a memory array; and
a memory controller configured to:
select a set of memory cells of the memory array for sensing;
sense a state of each cell of the set of memory cells;
detect an error associated with the sensed states of the set of memory cells;
change a voltage of a node of the electronic memory apparatus from a first value to a second value in response to the error detection;
indicate that the error has been detected based at least in part on changing the voltage of the node; and
change the voltage of the node to the first value based at least in part on a deselection of the set of memory cells, wherein the deselection occurs after determining the error has been detected, or based at least in part on a determination that a threshold amount of time has elapsed since determining that the error has been detected.