IP Library Granted Patent US 10,157,978
Granted Patent B2
US 10,157,978 · App. 15/198,524 · Granted Dec 18, 2018

High density three-dimensional integrated capacitors

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Quick Facts
Patent No.
US 10,157,978
App. No.
15/198,524
Granted
Dec 18, 2018
Kind
B2
Abstract

A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.

Claims (27)

1. A capacitor structure, comprising:

a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces;

first and second metal elements exposed at the first surface and extending into the through opening, a first capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening;

third and fourth metal elements exposed at the second surface and extending into the through opening, a second capacitor dielectric layer separating and insulating the third and fourth metal elements from one another at least within the through opening;

first, second, third and fourth electrodes connected to the respective first, second, third, and fourth metal elements, the first and third electrodes being connectable to respective first and second electric potentials; and

an insulating dielectric layer separating and insulating the second and third metal elements from one another at least within the through opening, the insulating dielectric layer having an undulating shape.

2. The capacitor structure as claimed in claim 1 , wherein the first and second metal elements and the first capacitor dielectric layer define a first capacitor, and the third and fourth metal elements and the second capacitor dielectric layer define a second capacitor.

3. The capacitor structure as claimed in claim 1 , wherein the second and fourth electrodes are connectable to respective third and fourth electric potentials.

4. The capacitor structure as claimed in claim 1 , wherein a portion of the opening that is not occupied by the metal elements and the dielectric layers is filled with a dielectric material.

5. The capacitor structure as claimed in claim 4 , wherein each of the first and fourth metal elements has a first portion that is separated from an adjacent second portion that is substantially parallel to the first portion by the dielectric material.

6. The capacitor structure as claimed in claim 1 , wherein each of the first and second capacitor dielectric layers has a dielectric constant k of at least 3.

7. A capacitor structure, comprising:

a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces;

first and second metal elements exposed at the first surface and extending into the through opening, a first capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening;

third and fourth metal elements exposed at the second surface and extending into the through opening, a second capacitor dielectric layer separating and insulating the third and fourth metal elements from one another at least within the through opening;

first, second, third and fourth electrodes connected to the respective first, second, third, and fourth metal elements, the first and third electrodes being connectable to respective first and second electric potentials; and

an insulating dielectric layer separating and insulating the second and third metal elements from one another at least within the through opening, the insulating dielectric layer having an undulating shape, wherein each of the upper and lower surfaces of the insulating dielectric layer within the opening has at least one dimension having at least triple the height of the opening between the first and second surfaces.

8. A capacitor structure, comprising:

a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces;

first and second metal elements exposed at the first surface and extending into the through opening, a first capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening;

third and fourth metal elements exposed at the second surface and extending into the through opening, a second capacitor dielectric layer separating and insulating the third and fourth metal elements from one another at least within the through opening;

first, second, third and fourth electrodes connected to the respective first, second, third, and fourth metal elements, the first and third electrodes being connectable to respective first and second electric potentials; and

an insulating dielectric layer separating and insulating the second and third metal elements from one another at least within the through opening, the insulating dielectric layer having an undulating shape,

wherein the first and second metal elements include respective fifth and sixth electrodes exposed at the first surface, and the third and fourth metal elements include respective seventh and eighth electrodes exposed at the second surface.

9. A system comprising a capacitor structure according to claim 1 and one or more other electronic components electrically connected to the capacitor structure.

10. The system as claimed in claim 9 , further comprising a housing, said capacitor structure and said other electronic components being mounted to said housing.

11. The capacitor structure as claimed in claim 1 , wherein the first surface and the second surface are disposed on opposite sides of the substrate, the first surface is separated from the second surface by a thickness of the substrate, the thickness being defined in a direction perpendicular to a plane defined by the first surface, and the through opening extends fully through the thickness of the substrate from the first surface to the second surface.

Assignments (5)
CHANGE OF NAME Recorded Sep 13, 2023
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 064897/0184 →
CERTIFICATE OF CONVERSION & CHANGE OF NAME Recorded Jun 27, 2022
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 060443/0792 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2016
From: TESSERA RESEARCH LLC
To: TESSERA, INC.
Reel/Frame 039074/0417 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2016
From: OGANESIAN, VAGE; HABA, BELGACEM; MOHAMMED, ILYAS; SAVALIA, PIYUSH
To: TESSERA RESEARCH LLC
Reel/Frame 039062/0355 →
Cited By (2)
US 12,266,683 US 12,622,003