Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects

1. A method, comprising, in a fabrication stage of a metallization layer of a semiconductor device in which copper is used for an interconnect material and cobalt is used to encapsulate said copper, introducing a material that will form an alloy with said cobalt to resist a degradation of an effect of said cobalt on encapsulating said copper.

2. The method of claim 1 , wherein said introduced material comprises nickel (Ni).

3. The method of claim 1 , wherein said introduced material comprises palladium (Pd).

4. The method of claim 1 , wherein said introduced material interacts with said cobalt to cause a hexagonal-close-packed (HCP) crystal structure of cobalt to change to a face-centered-cubic (FCC) crystal structure of cobalt, said FCC crystal structure providing a resistance of said cobalt to migrate.

5. The method of claim 1 , wherein said encapsulating said copper further comprises a liner material and said introduced material inhibits a migration of cobalt into said liner.

6. The method of claim 5 , wherein said liner material comprises Ruthenium (Ru).

7. The method of claim 1 , wherein said cobalt alloy inhibits a chemical attack on cobalt, thereby protecting against a formation of divots during a chemical mechanical polishing/planarization (CMP) processing of said metallization layer.

8. The method of claim 1 , wherein said introduced material is introduced using a doped liner component used in said encapsulating said copper.

9. The method of claim 8 , wherein said liner comprises ruthenium (Ru).

10. The method of claim 1 , wherein said introduced material is introduced as an alloy seed material of said copper.

11. The method of claim 1 , wherein said encapsulating said copper comprises providing a cobalt cap on top of said copper, and said introduced material is introduced by doping said cobalt cap with said introduced material.

12. The method of claim 1 , wherein said introduced material is introduced using an electroless deposition process.

13. A semiconductor chip, as fabricated using the method of claim 1 .

14. A semiconductor device comprising a semiconductor chip of claim 13 .

15. The method of claim 1 , wherein said encapsulating said copper further comprises a liner comprising Ruthenium (Ru) and said introduced material inhibits a migration of cobalt into said Ru liner.

16. A method of inhibiting an electro-migration of copper (Cu) in copper interconnects in metallization layers of a chip, said copper interconnects encapsulated by a liner comprising cobalt (Co) and a cap comprising cobalt, said method comprising introducing a material that forms an alloy with said cobalt to stabilize a migration of said cobalt from said cobalt liner and said cobalt cap.

17. The method of claim 16 , wherein said introduced material comprises at least one of nickel (Ni) and palladium (Pd).

18. The method of claim 16 , wherein said introduced material interacts with said cobalt to cause a hexagonal-close-packed (HCP) crystal structure of cobalt to change to a face-centered-cubic (FCC) crystal structure of cobalt, said FCC crystal structure providing a resistance of said cobalt to migrate.

19. The method of claim 16 , wherein said introduced material is introduced using a doped liner component used in said encapsulating said copper.

20. A semiconductor chip, comprising:

a substrate having a plurality of electronic component elements fabricated on a top surface thereof, in a device layer; and

a plurality of metallization layers formed successively on top of said device layer, to interconnect said electronic component elements using copper (Cu), each said metallization layer having a different interconnect pattern,

wherein said Cu in said Cu interconnect pattern in each said metallization layer is encapsulated in a layer of cobalt and wherein a material is introduced into an interconnect structure of said interconnect pattern of each said metallization layer that forms an alloy that resists a degradation effect of said cobalt to encapsulate said Cu.

21. The semiconductor chip of claim 20 , wherein said introduced material comprises at least one of nickel (Ni) and palladium (Pd).

22. A semiconductor chip, comprising:

a substrate having a plurality of electronic component elements fabricated on a top surface thereof, in a device layer; and

a plurality of metallization layers formed successively on top of said device layer, to interconnect said electronic component elements using copper (Cu), each said metallization layer having a different interconnect pattern,

wherein said Cu in said Cu interconnect pattern in each said metallization layer is encapsulated in a layer of cobalt and wherein a material is introduced into an interconnect structure of at least one said interconnect pattern of at least one said metallization layer that forms an alloy that resists a degradation effect of said cobalt to encapsulate said Cu.

23. The semiconductor chip of claim 22 , wherein said introduced material comprises at least one of nickel (Ni) and palladium (Pd).

24. A device comprising at least one semiconductor chip of claim 22 .

25. A semiconductor chip, comprising:

a substrate having a plurality of electronic component elements fabricated on a top surface thereof, in a device layer; and

a plurality of metallization layers formed successively on top of said device layer, to interconnect said electronic component elements using copper (Cu), each said metallization layer having a different interconnect pattern,

wherein said Cu in said Cu interconnect pattern in each said metallization layer is encapsulated in a layer of cobalt and wherein at least one interconnect structure of at least one interconnect pattern of at least one said metallization layer comprises at least one of nickel (Ni) and palladium (Pd) such as to resist a degradation effect of said cobalt to encapsulate said Cu.