IP Library Assignment 073658/0771
Patent Assignment
Reel/Frame 073658/0771

Change of Name

Recorded: 2025-11-21 Pages: 8
Assignor
TESSERA, INC.
Executed: 2021-10-01
Assignee
TESSERA LLC
3025 ORCHARD PARKWAY, SAN JOSE, CALIFORNIA, 95134
Covered Properties (79)
Forming Gates with Varying Length Using Sidewall Image Transfer
Patent: 9,793,270 →
Application: 15/134,497 →
Publication: US 2017/0309622
Vertical Field Effect Transistors with Metallic Source/Drain Regions
Patent: 9,728,466 →
Application: 15/140,763 →
Semiconductor Device with Different Fin Pitches
Patent: 9,793,271 →
Application: 15/142,450 →
Publication: US 2017/0317077
Semiconductor Device with Different Fin Pitches
Patent: 9,589,956 →
Application: 15/172,593 →
Semiconductor Device with Different Fin Pitches
Patent: 9,653,463 →
Application: 15/172,598 →
Forming Insulator Fin Structure in Isolation Region to Support Gate Structures
Patent: 9,870,948 →
Application: 15/177,917 →
Publication: US 2017/0358498
Copper Interconnect Structures
Patent: 9,806,018 →
Application: 15/186,600 →
Structure and Method for Improved Stabilization of Cobalt Cap and/or Cobalt Liner in Interconnects
Patent: 9,780,035 →
Application: 15/198,721 →
Stacked Nanowire Devices
Patent: 9,735,234 →
Application: 15/207,802 →
Publication: US 2017/0229538
Multi-Level Metallization Interconnect Structure
Patent: 9,935,051 →
Application: 15/240,700 →
Publication: US 2018/0053721
Multi-Layer Filled Gate Cut to Prevent Power Rail Shorting to Gate Structure
Patent: 9,805,983 →
Application: 15/241,898 →
Low Aspect Ratio Interconnect
Application: 15/251,775 →
Publication: US 2018/0061761
Uniform Fin Dimensions Using Fin Cut Hardmask
Application: 15/258,378 →
Publication: US 2018/0069113
Forming a Hybrid Channel Nanosheet Semiconductor Structure
Patent: 9,704,863 →
Application: 15/260,509 →
Method and Structure for Cut Material Selection
Patent: 9,779,944 →
Application: 15/263,959 →
Metal Fill Optimization for Self-Aligned Double Patterning
Patent: 9,735,029 →
Application: 15/273,092 →
Multiple Finfet Formation with Epitaxy Separation
Patent: 9,748,245 →
Application: 15/274,269 →
Transistor with Air Spacer and Self-Aligned Contact
Patent: 9,721,897 →
Application: 15/276,985 →
Margin for Fin Cut Using Self-Aligned Triple Patterning
Patent: 9,997,369 →
Application: 15/277,431 →
Publication: US 2018/0090335
Transistor with Improved Air Spacer
Patent: 9,941,352 →
Application: 15/285,728 →
Publication: US 2018/0097059
Preserving Channel Strain in Fin Cuts
Application: 15/294,906 →
Publication: US 2018/0108655
Approach to Minimization of Strain Loss in Strained Fin Field Effect Transistors
Patent: 9,818,875 →
Application: 15/295,546 →
Forming a Contact for a Semiconductor Device
Patent: 9,917,060 →
Application: 15/331,331 →
Fin Cut During Replacement Gate Formation
Patent: 9,741,823 →
Application: 15/336,886 →
Stacked Complementary Fets Featuring Vertically Stacked Horizontal Nanowires
Patent: 9,837,414 →
Application: 15/338,515 →
Inner Spacer for Nanosheet Transistors
Patent: 9,923,055 →
Application: 15/339,283 →
Cobalt Contact and Interconnect Structures
Application: 15/403,667 →
Publication: US 2018/0197773
Nanosheet Transistors Having Different Gate Dielectric Thicknesses on the Same Chip
Patent: 9,935,014 →
Application: 15/404,469 →
Reduced Resistance Source and Drain Extensions in Vertical Field Effect Transistors
Patent: 9,935,195 →
Application: 15/404,904 →
Nanosheet Transistors on Bulk Material
Application: 15/430,764 →
Publication: US 2018/0233557
Vertical Field Effect Transistors with Metallic Source/Drain Regions
Patent: 9,859,384 →
Application: 15/431,807 →
Publication: US 2017/0317177
Transistor with Air Spacer and Self-Aligned Contact
Application: 15/431,944 →
Publication: US 2018/0090586
Forming Insulator Fin Structure in Isolation Region to Support Gate Structures
Application: 15/443,451 →
Publication: US 2017/0358575
Fin Cut During Replacement Gate Formation
Application: 15/445,107 →
Publication: US 2018/0122801
Finfet with Uniform Shallow Trench Isolation Recess
Patent: 9,865,598 →
Application: 15/450,725 →
Fully Aligned via with Integrated Air Gaps
Patent: 9,966,337 →
Application: 15/459,684 →
Efficient Metal-Insulator-Metal Capacitor
Application: 15/462,501 →
Publication: US 2018/0269271
Forming a Hybrid Channel Nanosheet Semiconductor Structure
Patent: 9,892,976 →
Application: 15/465,962 →
Forming a Hybrid Channel Nanosheet Semiconductor Structure
Patent: 9,881,839 →
Application: 15/465,989 →
Forming Gates with Varying Length Using Sidewall Image Transfer
Patent: 9,899,383 →
Application: 15/467,690 →
Publication: US 2017/0309626
Forming a Contact for a Semiconductor Device
Application: 15/474,147 →
Publication: US 2018/0114861
Transistor with Air Spacer and Self-Aligned Contact
Application: 15/485,886 →
Publication: US 2018/0090593
Transistor with Improved Air Spacer
Application: 15/591,278 →
Publication: US 2018/0096990
Metal Fill Optimization for Self-Aligned Double Patterning
Application: 15/604,090 →
Publication: US 2018/0082854
Fin Cut During Replacement Gate Formation
Application: 15/608,545 →
Publication: US 2018/0122708
Multiple Finfet Formation with Epitaxy Separation
Application: 15/617,001 →
Publication: US 2018/0090496
Multi-Layer Filled Gate Cut to Prevent Power Rail Shorting to Gate Structure
Application: 15/620,095 →
Publication: US 2018/0053694
Self-Aligned Air Gap Spacer for Nanosheet Cmos Devices
Patent: 9,954,058 →
Application: 15/620,437 →
Stacked Nanowire Devices
Application: 15/628,821 →
Publication: US 2017/0294358
Integrating and Isolating Nfet and Pfet Nanosheet Transistors on a Substrate
Application: 15/629,306 →
Structure and Method for Improved Stabilization of Cobalt Cap and/or Cobalt Liner in Interconnects
Application: 15/676,263 →
Publication: US 2018/0005953
Copper Interconnect Structures
Application: 15/678,328 →
Publication: US 2017/0365550
Forming Insulator Fin Structure in Isolation Region to Support Gate Structures
Application: 15/680,711 →
Publication: US 2017/0372970
Forming a Hybrid Channel Nanosheet Semiconductor Structure
Application: 15/690,601 →
Publication: US 2018/0076095
Reduced Resistance Source and Drain Extensions in Vertical Field Effect Transistors
Application: 15/695,319 →
Publication: US 2018/0197989
Semiconductor Device with Different Fin Pitches
Application: 15/697,539 →
Publication: US 2017/0365601
Nanosheet Transistors on Bulk Material
Patent: 9,917,152 →
Application: 15/701,894 →
Approach to Minimization of Strain Loss in Strained Fin Field Effect Transistors
Application: 15/790,826 →
Publication: US 2018/0108771
Cobalt Contact and Interconnect Structures
Application: 15/801,933 →
Publication: US 2018/0197774
Efficient Metal-Insulator-Metal Capacitor Fabrication
Application: 15/805,829 →
Publication: US 2018/0269274
Self-Aligned Air Gap Spacer for Nanosheet Cmos Devices
Application: 15/811,812 →
Publication: US 2018/0358435
Finfet with Uniform Shallow Trench Isolation Recess
Application: 15/819,577 →
Publication: US 2018/0254273
Inner Spacer for Nanosheet Transistors
Application: 15/826,841 →
Publication: US 2018/0122900
Nanosheet Transistors Having Different Gate Dielectric Thicknesses on the Same Chip
Application: 15/846,447 →
Publication: US 2018/0197784
Nanosheet Transistors Having Different Gate Dielectric Thicknesses on the Same Chip
Application: 15/846,461 →
Publication: US 2018/0197785
Reduced Resistance Source and Drain Extensions in Vertical Field Effect Transistors
Application: 15/850,891 →
Publication: US 2018/0197990
Forming Gates with Varying Length Using Sidewall Image Transfer
Application: 15/851,095 →
Publication: US 2018/0138175
Multi-Level Metallization Interconnect Structure
Application: 15/918,870 →
Publication: US 2018/0204800
Margin for Fin Cut Using Self-Aligned Triple Patterning
Application: 15/939,677 →
Publication: US 2018/0226262
Forming a Hybrid Channel Nanosheet Semiconductor Structure
Application: 16/019,916 →
Publication: US 2018/0323111
Integrating and Isolating Nfet and Pfet Nanosheet Transistors on a Substrate
Application: 16/023,687 →
Publication: US 2018/0374761
Nanosheet Transistors on Bulk Material
Application: 16/028,495 →
Publication: US 2018/0331179
Preserving Channel Strain in Fin Cuts
Application: 16/038,600 →
Publication: US 2018/0323194
Efficient Metal-Insulator-Metal Capacitor
Application: 16/052,161 →
Publication: US 2018/0350896
Uniform Fin Dimensions Using Fin Cut Hardmask
Application: 16/238,193 →
Publication: US 2019/0140090
Low Aspect Ratio Interconnect
Application: 16/250,351 →
Publication: US 2019/0148296
Reduced Resistance Source and Drain Extensions in Vertical Field Effect Transistors
Application: 16/276,118 →
Publication: US 2019/0181263
Alternating Hardmasks for Tight-Pitch Line Formation
Application: 16/798,823 →
Publication: US 2020/0266066
Efficient Metal-Insulator-Metal Capacitor
Application: 16/871,935 →
Publication: US 2020/0273947
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Apr 21, 2016
From: CHENG, KANGGUO; LI, JUNTAO; WANG, GENG; ZHANG, QINTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038339/0230 →
Assignment of Assignor's Interest Apr 28, 2016
From: MALLELA, HARI V.; ROBISON, ROBERT R.; VEGA, REINALDO; VENIGALLA, RAJASEKHAR
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038403/0750 →
Assignment of Assignor's Interest Apr 29, 2016
From: DORIS, BRUCE B.; HOOK, TERENCE B.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038421/0971 →
Assignment of Assignor's Interest Jun 3, 2016
From: DORIS, BRUCE B.; HOOK, TERENCE B.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038800/0614 →
Assignment of Assignor's Interest Jun 3, 2016
From: DORIS, BRUCE B.; HOOK, TERENCE B.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038800/0408 →
Assignment of Assignor's Interest Jun 9, 2016
From: CHENG, KANGGUO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038861/0567 →
Assignment of Assignor's Interest Jun 20, 2016
From: CLEVENGER, LAWRENCE A.; WANG, WEI; YANG, CHIH-CHAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038953/0169 →
Assignment of Assignor's Interest Jul 1, 2016
From: BRIGGS, BENJAMIN DAVID; KELLY, JAMES J.; MOTOYAMA, KOICHI; QUON, ROGER ALLAN
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039063/0813 →
Assignment of Assignor's Interest Jul 12, 2016
From: CHENG, KANGGUO; DIVAKARUNI, RAMACHANDRA; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039134/0660 →
Assignment of Assignor's Interest Aug 18, 2016
From: ADUSUMILLI, PRANEET; REZNICEK, ALEXANDER; VAN DER STRATEN, OSCAR
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039478/0251 →
Assignment of Assignor's Interest Aug 19, 2016
From: CHENG, KANGGUO; TANG, HAO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039487/0208 →
Assignment of Assignor's Interest Aug 30, 2016
From: BRIGGS, BENJAMIN D.; HUANG, ELBERT E.; PATLOLLA, RAGHUVEER R.; PEETHALA, CORNELIUS BROWN
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039588/0592 →
Assignment of Assignor's Interest Sep 7, 2016
From: CHENG, KANGGUO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039660/0224 →
Assignment of Assignor's Interest Sep 9, 2016
From: CHENG, KANGGUO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039683/0307 →
Assignment of Assignor's Interest Sep 13, 2016
From: BURNS, SEAN D.; CLEVENGER, LAWRENCE A.; COLBURN, MATTHEW E.; FELIX, NELSON M.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040019/0688 →
Assignment of Assignor's Interest Sep 22, 2016
From: CHU, ALBERT M.; CLEVENGER, LAWRENCE A.; GUAN, XIMENG; NA, MYUNG-HEE
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039835/0687 →
Assignment of Assignor's Interest Sep 23, 2016
From: CHENG, KANGGUO; LI, JUNTAO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039845/0219 →
Assignment of Assignor's Interest Sep 27, 2016
From: CHENG, KANGGUO; MIAO, XIN; XU, PENG; ZHANG, CHEN
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039864/0126 →
Assignment of Assignor's Interest Sep 29, 2016
From: KARVE, GAURI; LIE, FEE LI; MILLER, ERIC R.; SIEG, STUART A.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039890/0809 →
Assignment of Assignor's Interest Oct 5, 2016
From: BI, ZHENXING; CHENG, KANGGUO; LI, JUNTAO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039944/0301 →
Assignment of Assignor's Interest Oct 17, 2016
From: GREENE, ANDREW M.; GUO, DECHAO; RAMACHANDRAN, RAVIKUMAR; VENIGALLA, RAJASEKHAR
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040029/0335 →
Assignment of Assignor's Interest Jan 6, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 051489/0557 →
Assignment of Assignor's Interest Jan 7, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 051493/0546 →
Security Interest Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
Change of Name Nov 21, 2025
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 073658/0868 →