Margin for fin cut using self-aligned triple patterning
A method for fabricating a semiconductor structure. The method includes forming a plurality of mandrel structures. A plurality of first spacers is formed on sidewalls of the mandrel structures. A plurality of second spacers is formed on sidewalls of the first spacers. The plurality of first spacers is removed selective to the plurality of second spacers and mandrel structures. A cut mask is formed over a first set of second spacers in the plurality of second spacers and a first set of mandrel structures in the plurality of mandrel structures. A second set of second spacers in the plurality of spacers and a second set of mandrel structures in the plurality of mandrel structures remain exposed. One of the second set of mandrel structures and the second set of second spacers is removed selective to the second set of second spacers and the second set of mandrel structures, respectively.
1. A method of forming a semiconductor structure comprising:
forming a plurality of mandrel structures;
forming a plurality of first spacers on sidewalls of the plurality of mandrel structures;
forming a plurality of second spacers on sidewalls of the plurality of first spacers;
removing the plurality of first spacers selective to the plurality of second spacers and the plurality of mandrel structures;
forming a cut mask over a first set of second spacers in the plurality of second spacers and a first set of mandrel structures in the plurality of mandrel structures, wherein a second set of second spacers in the plurality of second spacers and a second set of mandrel structures in the plurality of mandrel structures remain exposed; and
removing the second set of mandrel structures selective to the second set of second spacers.
2. The method of claim 1 , wherein removing the plurality of first spacers disposes each mandrel structure in the plurality of mandrel structures between a pair of second spacers in the plurality of second spacers.
3. The method of claim 1 , wherein each second spacer in the plurality of second spacers comprises a material different from a material of each mandrel structure in the plurality of mandrel structures.
4. The method of claim 1 , wherein forming the plurality of mandrel structures comprises:
forming a planarization layer on and in contact with a mandrel layer;
forming an anti-reflective coating on and in contact with the planarization layer;
forming a photoresist layer on and in contact with the anti-reflective coating;
patterning the photoresist layer; and
transferring the pattern of the photoresist layer to the mandrel layer, wherein the transferring forms the plurality of mandrel structures.
5. The method of claim 1 , wherein the plurality of first spacers comprises amorphous carbon.
6. The method of claim 1 , wherein the plurality of second spacers comprises a nitride material.
7. The method of claim 1 , wherein the plurality of mandrel structures comprises an oxide material.
8. The method of claim 1 , wherein forming the cut mask comprises:
forming a planarization layer in contact with the plurality of mandrel structures and the plurality of second spacers;
forming an anti-reflective coating on and in contact with the planarization layer;
forming a photoresist layer on and in contact with the anti-reflective coating;
patterning the photoresist layer; and
transferring the pattern of the photoresist layer to the cut mask.
9. The method of claim 1 , further comprising removing the cut mask selective to the first set of second spacers and the first set of mandrel structures.
10. The method of claim 9 , further comprising:
forming another cut mask over at least a third set of second spacers in the plurality of second spacers, wherein a fourth set of second spacers in the plurality of second spacers and the first set of mandrel structures remain exposed; and
removing the fourth set of second spacers selective to the first set of mandrel structures.
11. The method of claim 10 , further comprising:
patterning a substrate utilizing the at least a third set of second spacers and the first set of mandrel structures as initial etch masks.
12. The method of claim 11 , wherein the pattering forms a plurality of fin structures from the substrate, and wherein a first set of fin structures in the plurality of fin structures comprises a first pitch different from at least a second pitch of at least a second set of fin structures in the plurality of fin structures.
13. The method of claim 11 , wherein patterning the substrate comprises at least:
patterning a sacrificial layer utilizing the at least a third set of second spacers and the first set of mandrel structures as etch masks, and wherein the pattering forms a plurality of sacrificial layer features corresponding to the at least a third set of second spacers and the first set of mandrel structures;
patterning a first hardmask layer and a second hardmask layer utilizing the plurality of sacrificial layer features as etch masks, and wherein the pattering forms a plurality of hardmask layer features each comprising a portion of the first hardmask layer and the second hardmask layer; and
patterning the substrate utilizing the plurality of hardmask layer features as an etch mask to form the plurality of fin structures.
14. A method of forming a semiconductor structure comprising:
forming a first hardmask layer on and in contact with a substrate;
forming a second hardmask layer on and in contact with the first hardmask layer;
forming a sacrificial patterning layer on and in contact with the second hardmask layer;
forming a plurality of mandrel structures on and in contact with the sacrificial patterning layer;
forming a plurality of first spacers on sidewalls of the plurality of mandrel structures;
forming a plurality of second spacers on sidewalls of the plurality of first spacers;
removing the plurality of first spacers selective to the plurality of second spacers and the plurality of mandrel structures;
forming a cut mask over a first set of second spacers in the plurality of second spacers and a first set of mandrel structures in the plurality of mandrel structures, wherein a second set of second spacers in the plurality of second spacers and a second set of mandrel structures in the plurality of mandrel structures remain exposed; and
removing the second set of second spacers selective to the second set of mandrel structures.
15. The method of claim 14 , wherein each second spacer in the plurality of second spacers comprises a material different from a material of each mandrel structure in the plurality of mandrel structures.
16. The method of claim 14 , further comprising removing the cut mask selective to the first set of second spacers and the first set of mandrel structures.
17. The method of claim 16 , further comprising:
forming another cut mask over at least one remaining second spacer in the plurality of second spacers and at least one mandrel structure in the plurality of mandrel structures, wherein one or more remaining second spacers in the plurality of second spacers and one or more mandrel structures in the plurality of mandrel structures remain exposed; and
removing the exposed one or more mandrel structures selective to the exposed one or more remaining second spacers.
18. The method of claim 17 , further comprising:
patterning the substrate utilizing remaining mandrel structures in the plurality of mandrel structures and remaining second spacers in the plurality of second spacers as initial etch masks.
19. The method of claim 18 , wherein the patterning forms a plurality of fin structures from the substrate, and wherein a first set of fin structures in the plurality of fin structures comprises a first pitch different from at least a second pitch of at least a second set of fin structures in the plurality of fin structures.
20. The method of claim 18 , wherein patterning the substrate comprises at least:
patterning the sacrificial patterning layer utilizing the remaining mandrel structures and the remaining second spacers as etch masks, and wherein the patterning forms a plurality of sacrificial layer features corresponding to the remaining second spacers;
patterning the first hardmask layer and the second hardmask layer utilizing the plurality of sacrificial layer features as etch masks, and wherein the patterning forms a plurality of hardmask layer features each comprising a portion of the first hardmask layer and the second hardmask layer; and
patterning the substrate utilizing the plurality of hardmask layer features as an etch mask to form the plurality of fin structures.