IP Library Assignment 051493/0546
Patent Assignment
Reel/Frame 051493/0546

Assignment of Assignor's Interest

Recorded: 2020-01-07 Pages: 16
Assignor
Assignee
TESSERA, INC.
3025 ORCHARD PARKWAY, SAN JOSE, CALIFORNIA, 95134
Covered Properties (55)
High-K/Metal Gate Mosfet with Reduced Parasitic Capacitance
Patent: 7,585,716 →
Application: 11/769,150 →
Publication: US 2009/0001480
3D Integration Structure and Method Using Bonded Metal Planes
Patent: 7,939,369 →
Application: 12/465,839 →
Publication: US 2010/0289144
High-K/Metal Gate Mosfet with Reduced Parasitic Capacitance
Patent: 7,812,411 →
Application: 12/554,292 →
Publication: US 2009/0321853
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Patent: 9,601,514 →
Application: 15/006,284 →
Methods of Fabricating Semiconductor Fins by Double Sidewall Image Transfer Patterning Through Localized Oxidation Enhancement of Sacrificial Mandrel Sidewalls
Patent: 9,852,917 →
Application: 15/077,538 →
Publication: US 2017/0278715
Vertical Field Effect Transistors with Metallic Source/Drain Regions
Patent: 9,728,466 →
Application: 15/140,763 →
Selective Recessing to Form a Fully Aligned Via
Application: 15/229,470 →
Publication: US 2018/0040510
Self-Forming Barrier for Use in Air Gap Formation
Application: 15/251,797 →
Publication: US 2018/0061708
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Patent: 9,716,046 →
Application: 15/254,573 →
Publication: US 2017/0213772
Fabrication of Nano-Sheet Transistors with Different Threshold Voltages
Patent: 9,653,289 →
Application: 15/268,993 →
Multiple Finfet Formation with Epitaxy Separation
Patent: 9,748,245 →
Application: 15/274,269 →
Forming a Sacrificial Liner for Dual Channel Devices
Patent: 9,773,893 →
Application: 15/276,029 →
Selective Gas Etching for Self-Aligned Pattern Transfer
Application: 15/284,862 →
Publication: US 2018/0096846
Preserving Channel Strain in Fin Cuts
Application: 15/294,906 →
Publication: US 2018/0108655
Approach to Minimization of Strain Loss in Strained Fin Field Effect Transistors
Patent: 9,818,875 →
Application: 15/295,546 →
Stacked Complementary Fets Featuring Vertically Stacked Horizontal Nanowires
Patent: 9,837,414 →
Application: 15/338,515 →
Inner Spacer for Nanosheet Transistors
Patent: 9,923,055 →
Application: 15/339,283 →
Forming a Sacrificial Liner for Dual Channel Devices
Application: 15/395,637 →
Publication: US 2018/0090604
Hybrid-Channel Nano-Sheet Fets
Patent: 9,972,542 →
Application: 15/398,232 →
Nanosheet Transistors Having Different Gate Dielectric Thicknesses on the Same Chip
Patent: 9,935,014 →
Application: 15/404,469 →
Reduced Resistance Source and Drain Extensions in Vertical Field Effect Transistors
Patent: 9,935,195 →
Application: 15/404,904 →
Nanosheet Field Effect Transistors with Partial Inside Spacers
Application: 15/417,312 →
Publication: US 2018/0219082
Vertical Field Effect Transistors with Metallic Source/Drain Regions
Patent: 9,859,384 →
Application: 15/431,807 →
Publication: US 2017/0317177
Approach to Minimization of Strain Loss in Strained Fin Field Effect Transistors
Application: 15/440,785 →
Publication: US 2018/0108735
Alternating Hardmasks for Tight-Pitch Line Formation
Application: 15/445,112 →
Publication: US 2018/0247824
Finfet with Uniform Shallow Trench Isolation Recess
Patent: 9,865,598 →
Application: 15/450,725 →
Fabrication of Nano-Sheet Transistors with Different Threshold Voltages
Application: 15/462,372 →
Publication: US 2018/0083113
Nano-Sheet Transistors with Different Threshold Voltages
Application: 15/462,447 →
Publication: US 2018/0082902
Efficient Metal-Insulator-Metal Capacitor
Application: 15/462,501 →
Publication: US 2018/0269271
Alternating Hardmasks for Tight-Pitch Line Formation
Application: 15/463,659 →
Publication: US 2018/0269060
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Application: 15/464,817 →
Publication: US 2017/0213730
Forming Self-Aligned Vias and Air-Gaps in Semiconductor Fabrication
Patent: 9,911,652 →
Application: 15/472,745 →
Sacrificial Mandrel Structure with Oxide Pillars having Different Widths and Resulting Fins Arrangements
Application: 15/482,245 →
Publication: US 2017/0278870
SEMICONDUCTOR DEVICE FORMED BY WET ETCH REMOVAL OF Ru SELECTIVE TO OTHER METALS
Application: 15/585,704 →
Multiple Finfet Formation with Epitaxy Separation
Application: 15/617,001 →
Publication: US 2018/0090496
Self-Aligned Air Gap Spacer for Nanosheet Cmos Devices
Patent: 9,954,058 →
Application: 15/620,437 →
Integrating and Isolating Nfet and Pfet Nanosheet Transistors on a Substrate
Application: 15/629,306 →
Sidewall Image Transfer (SIT) Methods with Localized Oxidation Enhancement of Sacrificial Mandrel Sidewall by Ion Beam Exposure
Application: 15/647,689 →
Publication: US 2017/0316951
Forming a Sacrificial Liner for Dual Channel Devices
Application: 15/652,888 →
Publication: US 2018/0090599
Reduced Resistance Source and Drain Extensions in Vertical Field Effect Transistors
Application: 15/695,319 →
Publication: US 2018/0197989
Approach to Minimization of Strain Loss in Strained Fin Field Effect Transistors
Application: 15/790,826 →
Publication: US 2018/0108771
Hybrid-Channel Nano-Sheet Fets
Application: 15/795,975 →
Publication: US 2018/0190544
Alternating Hardmasks for Tight-Pitch Line Formation
Application: 15/802,634 →
Publication: US 2018/0247825
Efficient Metal-Insulator-Metal Capacitor Fabrication
Application: 15/805,829 →
Publication: US 2018/0269274
Wet Etch Removal of Ru Selective to Other Metals
Application: 15/808,193 →
Publication: US 2018/0323151
Self-Aligned Air Gap Spacer for Nanosheet Cmos Devices
Application: 15/811,812 →
Publication: US 2018/0358435
Forming Self-Aligned Vias and Air-Gaps in Semiconductor Fabrication
Application: 15/815,173 →
Publication: US 2018/0286750
Finfet with Uniform Shallow Trench Isolation Recess
Application: 15/819,577 →
Publication: US 2018/0254273
Inner Spacer for Nanosheet Transistors
Application: 15/826,841 →
Publication: US 2018/0122900
Nanosheet Transistors Having Different Gate Dielectric Thicknesses on the Same Chip
Application: 15/846,447 →
Publication: US 2018/0197784
Nanosheet Transistors Having Different Gate Dielectric Thicknesses on the Same Chip
Application: 15/846,461 →
Publication: US 2018/0197785
Reduced Resistance Source and Drain Extensions in Vertical Field Effect Transistors
Application: 15/850,891 →
Publication: US 2018/0197990
Hybrid-Channel Nano-Sheet Fets
Application: 15/903,167 →
Publication: US 2018/0190545
Integrating and Isolating Nfet and Pfet Nanosheet Transistors on a Substrate
Application: 16/023,687 →
Publication: US 2018/0374761
Preserving Channel Strain in Fin Cuts
Application: 16/038,600 →
Publication: US 2018/0323194
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Jan 26, 2016
From: CHENG, KANGGUO; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037582/0352 →
Assignment of Assignor's Interest Mar 22, 2016
From: CHENG, KANGGUO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038072/0185 →
Assignment of Assignor's Interest Apr 28, 2016
From: MALLELA, HARI V.; ROBISON, ROBERT R.; VEGA, REINALDO; VENIGALLA, RAJASEKHAR
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038403/0750 →
Assignment of Assignor's Interest Aug 5, 2016
From: BRIGGS, BENJAMIN D.; DECHENE, JESSICA; HUANG, ELBERT E.; LEE, JOE
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039354/0842 →
Assignment of Assignor's Interest Aug 30, 2016
From: BRIGGS, BENJAMIN D.; HUANG, ELBERT; NOGAMI, TAKESHI; PENNY, CHRISTOPHER J.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039588/0630 →
Assignment of Assignor's Interest Sep 1, 2016
From: CHENG, KANGGUO; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039616/0372 →
Assignment of Assignor's Interest Sep 19, 2016
From: BALAKRISHNAN, KARTHIK; CHENG, KANGGUO; HASHEMI, POUYA; REZNICEK, ALEXANDER
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039780/0272 →
Assignment of Assignor's Interest Sep 23, 2016
From: CHENG, KANGGUO; LI, JUNTAO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039845/0219 →
Assignment of Assignor's Interest Sep 26, 2016
From: BU, HUIMING; CHENG, KANGGUO; GUO, DECHAO; KANAKASABAPATHY, SIVANANDA K.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039857/0811 →
Assignment of Assignor's Interest Oct 4, 2016
From: ARNOLD, JOHN CHRISTOPHER; BURNS, SEAN D.; MIGNOT, YANN ALAIN MARCEL; XU, YONGAN
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039932/0807 →
Assignment of Assignor's Interest Oct 17, 2016
From: BI, ZHENXING; CHENG, KANGGUO; LI, JUNTAO; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040033/0960 →
Assignment of Assignor's Interest Oct 17, 2016
From: GREENE, ANDREW M.; GUO, DECHAO; RAMACHANDRAN, RAVIKUMAR; VENIGALLA, RAJASEKHAR
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040029/0335 →
Assignment of Assignor's Interest Oct 31, 2016
From: CHENG, KANGGUO; XIE, RUILONG; YAMASHITA, TENKO; YEH, CHUN-CHEN
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040177/0647 →
Assignment of Assignor's Interest Oct 31, 2016
From: BALAKRISHNAN, KARTHIK; CHENG, KANGGUO; HASHEMI, POUYA; REZNICEK, ALEXANDER
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040171/0826 →
Assignment of Assignor's Interest Dec 30, 2016
From: BU, HUIMING; CHENG, KANGGUO; GUO, DECHAO; KANAKASABAPATHY, SIVANANDA K.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040811/0158 →
Assignment of Assignor's Interest Jan 4, 2017
From: BI, ZHENXING; CHENG, KANGGUO; XU, PENG; XU, WENYU
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040842/0033 →
Assignment of Assignor's Interest Jan 12, 2017
From: CHENG, KANGGUO; LI, JUNTAO; WANG, GENG; ZHANG, QINTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040964/0071 →
Assignment of Assignor's Interest Jul 18, 2018
From: GREENE, ANDREW M.; GUO, DECHAO; RAMACHANDRAN, RAVIKUMAR; VENIGALLA, RAJASEKHAR
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 046384/0538 →
Security Interest Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
Change of Name Mar 24, 2022
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 059498/0010 →
Change of Name Apr 29, 2022
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 059835/0051 →
Certificate of Conversion & Change of Name Jun 27, 2022
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 060443/0792 →
Certificate of Conversion & Change of Name Sep 7, 2022
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 061388/0199 →
Change of Name Sep 27, 2024
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 069067/0448 →
Change of Name Sep 27, 2024
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 069067/0454 →