Hybrid-channel nano-sheets FETs
Integrated chips include a first device and a second device. The first device includes a stack of vertically arranged sheets of a first channel material, a source and drain region having a first dopant type, and a first work function metal layer formed from a first work function metal. The second device includes a stack of vertically arranged sheets of a second channel material, a source and drain region having a second dopant type, and a second work function metal layer formed from a second work function metal.
1. An integrated chip, comprising:
a first device, comprising:
a stack of vertically arranged sheets of a first channel material;
a source and drain region having a first dopant type; and
a first work function metal layer formed from a first work function metal; and
a second device, comprising:
a stack of vertically arranged sheets of a second channel material that are vertically displaced with respect to the stack of vertically arranged sheets of the first material;
a source and drain region having a second dopant type;
a second work function metal layer formed from a second work function metal; and
a layer of dielectric material formed below the stack of vertically arranged sheets of the second channel material and directly on a semiconductor substrate, wherein the second work function metal layer penetrates the layer of dielectric material to contact the semiconductor substrate.
2. The integrated chip of claim 1 , wherein the stack of vertically arranged sheets of the first channel material are vertically staggered with respect to the stack of vertically arranged sheets of the second channel material, with no sheet of second channel material being at a same height as a sheet of first channel material.
3. The integrated chip of claim 1 , wherein the first channel material is silicon and wherein the second channel material is silicon germanium.
4. The integrated chip of claim 1 , wherein the first dopant type is an n-type dopant and wherein the second dopant type is a p-type dopant.
5. The integrated chip of claim 1 , further comprising first layer caps comprising a dielectric positioned between the sheets of first channel material.
6. The integrated chip of claim 5 , wherein the first layer caps are positioned at sidewalls of the first work function metal layer.
7. The integrated chip of claim 1 , further comprising layer caps comprising a dielectric positioned between the sheets of second channel material.
8. The integrated chip of claim 7 , wherein the layer caps are positioned at sidewalls of the second work function metal layer.
9. The integrated chip of claim 1 , further comprising a pedestal of first channel material under the stack of vertically arranged sheets of the first channel material, said pedestal being integral with a semiconductor substrate.
10. An integrated chip, comprising:
a first device, comprising:
a stack of vertically arranged sheets of a first channel material;
a source and drain region having a first dopant type; and
a first work function metal layer formed from a first work function metal;
a pedestal of first channel material under the stack of vertically arranged sheets of the first channel material; and
a second device, comprising:
a stack of vertically arranged sheets of a second channel material;
a source and drain region having a second dopant type;
a second work function metal layer formed from a second work function metal; and
a layer of dielectric material formed below the stack of vertically arranged sheets of the second channel material and directly on a semiconductor substrate, having a same height as a height of the pedestal of first channel material.
11. The integrated chip of claim 10 , wherein the stack of vertically arranged sheets of the first channel material are vertically displaced with respect to the stack of vertically arranged sheets of the second channel material.
12. The integrated chip of claim 11 , wherein the stack of vertically arranged sheets of the first channel material are vertically staggered with respect to the stack of vertically arranged sheets of the second channel material, with no sheet of second channel material being at a same height as a sheet of first channel material.
13. The integrated chip of claim 10 , wherein the first channel material is silicon and wherein the second channel material is silicon germanium.
14. The integrated chip of claim 10 , wherein the first dopant type is an n-type dopant and wherein the second dopant type is a p-type dopant.
15. The integrated chip of claim 10 , further comprising first layer caps comprising a dielectric positioned between the sheets of first channel material.
16. The integrated chip of claim 15 , wherein the first layer caps are positioned at sidewalls of the first work function metal layer.
17. The integrated chip of claim 10 , further comprising layer caps comprising a dielectric positioned between the sheets of second channel material.
18. The integrated chip of claim 17 , wherein the layer caps are positioned at sidewalls of the second work function metal layer.