Fabrication of nano-sheet transistors with different threshold voltages

1. A method of forming two or more nano-sheet devices with varying channel lengths, comprising:

forming at least two cut-stacks including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate;

removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers;

removing a portion of the at least one alternating nano-sheet channel layer in a first of the at least two cut-stacks to form a first recess having a first recess depth in the at least one alternating nano-sheet channel layer; and

removing a portion of the at least one alternating nano-sheet channel layer in a second of the at least two cut-stacks to provide two different channel lengths.

2. The method of claim 1 , further comprising forming the plurality of sacrificial release layers and the at least one alternating nano-sheet channel layer on the substrate by an epitaxially growth process, patterning and etching the plurality of sacrificial release layers and the at least one alternating nano-sheet channel layer to form a channel stack, and forming a dummy gate on the channel stack.

3. The method of claim 2 , wherein the at least two cut-stacks are formed from the same channel stack.

4. The method of claim 1 , further comprising forming a mask on at least one of the at least two cut-stacks after removing a portion of the plurality of sacrificial release layers, and removing an additional portion of the plurality of sacrificial release layers from the unmasked cut-stacks.

5. The method of claim 4 , wherein the additional portion of the plurality of sacrificial release layers is removed using an isotropic wet etch.

6. The method of claim 1 , further comprising foaming a mask on at least one of the at least two cut-stacks before removing a portion of the at least one alternating nano-sheet channel layer to form a recess in the unmasked cut-stacks.

7. The method of claim 6 , further comprising removing the mask from the at least one of the at least two cut-stacks after removing a portion of the at least one alternating nano-sheet channel layer, and removing a portion of the at least one alternating nano-sheet channel layer to form a recess in the previously masked at least one of the at least two cut-stacks and an additional portion of the at least one alternating nano-sheet channel layer from the unmasked at least one of the at least two cut-stacks.

8. The method of claim 1 , further comprising forming a source/drain on each of the at least two cut-stacks.

9. The method of claim 8 , wherein the source/drains are epitaxially grown on the exposed surfaces of the at least one alternating nano-sheet channel layer.

10. A method of forming two or more nano-sheet devices with varying channel lengths, comprising:

forming a channel stack including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate;

forming at least two cut-stacks from the channel stack, where each of the at least two cut-stacks includes a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer;

removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers;

forming an indentation fill layer in the indentations;

forming a mask on at least one of the two or more cut-stacks; and

removing a portion of the at least one alternating nano-sheet channel layer to form a recess in the unmasked cut-stacks.

11. The method of claim 10 , further comprising removing the mask from the at least one of the two or more cut-stacks after removing a portion of the at least one alternating nano-sheet channel layer, and removing a portion of the at least one alternating nano-sheet channel layer to form a recess in the previously masked at least one of the two or more cut-stacks and an additional portion of the at least one alternating nano-sheet channel layer from the at least one unmasked of the two or more cut-stacks.

12. The method of claim 11 , further comprising forming a source/drain on each of the two or more cut-stacks.

13. The method of claim 12 , further comprising forming a gate structure on each of the two or more cut-stacks.

14. A method of forming two or more nano-sheet devices with varying channel lengths, comprising:

forming at least two cut-stacks including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate;

removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers; and

removing a portion of the at least one alternating nano-sheet channel layer to form a recess having a recess depth in the at least one alternating nano-sheet channel layer, wherein the one of the two or more nano-sheet devices has a different threshold voltage, V T , than the other of the two or more nano-sheet devices by altering the length of the at least one alternating nano-sheet channel layer.

15. The method of claim 14 , wherein an isotropic etch forms the indentations having a predetermined indentation depth in the range of about 2 nm to about 10 nm.

16. The method of claim 14 , wherein the sacrificial release layers have a thickness in the range of about 5 nm to about 20 nm.

17. The method of claim 14 , wherein the sacrificial release layers are silicon-germanium (SiGe).

18. The method of claim 14 , wherein the at least one alternating nano-sheet channel layer is epitaxially grown on a crystalline surface of the substrate.

19. The method of claim 14 , wherein the at least one alternating nano-sheet channel layer is a single crystal silicon layer on a crystalline sacrificial release layer.