Patent Assignment
Reel/Frame 061388/0199
Certificate of Conversion & Change of Name
Recorded: 2022-09-07
Pages: 8
Assignor
TESSERA, INC.
Executed: 2021-10-01
Assignee
TESSERA LLC
3025 ORCHARD PARKWAY, SAN JOSE, CALIFORNIA, 95134
Covered Properties
(89)
Semiconductor Device with Reduced via Resistance
Interconnect Structure with Capping Layer and Barrier Layer
Minimizing Shorting Between Finfet Epitaxial Regions
Patent:
9,443,853 →
Application:
14/680,099 →
Finfet Devices
Stackable Molded Microelectronic Packages with Area Array Unit Connectors
Interconnect Structure with Barrier Layer
Advanced Copper Interconnects with Hybrid Microstructure
Sram Design to Facilitate Single Fin Cut in Double Sidewall Image Transfer Process
Patent:
9,564,446 →
Application:
14/971,212 →
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Patent:
9,601,514 →
Application:
15/006,284 →
Nanowire with Sacrificial Top Wire
Semiconductor Device with Reduced via Resistance
Semiconductor Device with Reduced via Resistance
Semiconductor Interconnect Structure with Double Conductors
Finfet Devices
Finfet Devices
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Patent:
9,768,072 →
Application:
15/199,352 →
Minimizing Shorting Between Finfet Epitaxial Regions
Interconnect Structure
Selective Recessing to Form a Fully Aligned Via
Minimizing Shorting Between Finfet Epitaxial Regions
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Nanosheet Channel-to-Source and Drain Isolation
Patent:
9,620,590 →
Application:
15/270,109 →
Forming a Sacrificial Liner for Dual Channel Devices
Patent:
9,773,893 →
Application:
15/276,029 →
Nanosheet Channel-to-Source and Drain Isolation
Forming a Sacrificial Liner for Dual Channel Devices
Sram Design to Facilitate Single Fin Cut in Double Sidewall Image Transfer Process
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Patent:
9,934,970 →
Application:
15/403,371 →
Copper Interconnect Structure with Manganese Oxide Barrier Layer
Finfet Devices
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Advanced Copper Interconnects with Hybrid Microstructure
Minimizing Shorting Between Finfet Epitaxial Regions
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Semiconductor Interconnect Structure with Double Conductors
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Forming a Sacrificial Liner for Dual Channel Devices
Forming a Sacrificial Liner for Dual Channel Devices
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Finfet Devices
Nanosheet Transistor
Patent:
10,243,061 →
Application:
15/814,376 →
Copper Interconnect Structure with Manganese Oxide Barrier Layer
Copper Interconnect Structure with Manganese Oxide Barrier Layer
Finfet Devices
Selective Ild Deposition for Fully Aligned via with Airgap
Two-Color Self-Aligned Double Patterning (Sadp) to Yield Static Random Access Memory (Sram) and Dense Logic
Forming Nanosheet Transistor Using Sacrificial Spacer and Inner Spacers
Semiconductor Device with Reduced via Resistance
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Minimizing Shorting Between Finfet Epitaxial Regions
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Selective Recessing to Form a Fully Aligned Via
Selective Recessing to Form a Fully Aligned Via
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Nanowire with Sacrificial Top Wire
Field effect transistor structures
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Advanced Copper Interconnects with Hybrid Microstructure
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Nanosheet Channel-to-Source and Drain Isolation
Finfet Devices
Finfet Devices
Interconnect Structure
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Nanosheet Transistor
Finfet Devices
Minimizing Shorting Between Finfet Epitaxial Regions
Forming Nanosheet Transistor Using Sacrificial Spacer and Inner Spacers
Selective Ild Deposition for Fully Aligned via with Airgap
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Interconnect Structure
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Forming a Sacrificial Liner for Dual Channel Devices
Forming a Sacrificial Liner for Dual Channel Devices
Semiconductor Device with Reduced via Resistance
Semiconductor Device with Reduced via Resistance
Two-Color Self-Aligned Double Patterning (Sadp) to Yield Static Random Access Memory (Sram) and Dense Logic
Nanosheet Channel-to-Source and Drain Isolation
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Advanced Copper Interconnects with Hybrid Microstructure
Selective Ild Deposition for Fully Aligned via with Airgap
Finfet Devices
Nanosheet Transistor
Copper Interconnect Structure with Manganese Barrier Layer
Selective Recessing to Form a Fully Aligned Via
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 22, 2014
From: EDELSTEIN, DANIEL C.; NGUYEN, SON V.; NOGAMI, TAKESHI; PRIYADARSHINI, DEEPIKA
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 033594/0456 →
Assignment of Assignor's Interest
Apr 7, 2015
From: CHENG, KANGGUO; PRANATHARTHIHARAN, BALASUBRAMANIAN; REZNICEK, ALEXANDER; SURISETTY, CHARAN V.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 035344/0341 →
Assignment of Assignor's Interest
Jun 25, 2015
From: BASKER, VEERARAGHAVAN S.; CHENG, KANGGUO; STANDAERT, THEODORUS E.; WANG, JUNLI
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 035907/0494 →
Assignment of Assignor's Interest
Oct 14, 2015
From: EDELSTEIN, DANIEL C.; NGUYEN, SON V.; NOGAMI, TAKESHI; PRIYADARSHINI, DEEPIKA
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 036793/0890 →
Assignment of Assignor's Interest
Oct 14, 2015
From: HABA, BELGACEM
To: TESSERA RESEARCH LLC
Reel/Frame 036791/0098 →
Assignment of Assignor's Interest
Oct 15, 2015
From: TESSERA RESEARCH LLC
To: TESSERA, INC.
Reel/Frame 036800/0979 →
Assignment of Assignor's Interest
Nov 25, 2015
From: EDELSTEIN, DANIEL C.; YANG, CHIH-CHAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037141/0033 →
Assignment of Assignor's Interest
Jan 5, 2016
From: WEYBRIGHT, MARY E.; WONG, ROBERT C.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037409/0288 →
Assignment of Assignor's Interest
Jan 26, 2016
From: CHENG, KANGGUO; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037582/0352 →
Assignment of Assignor's Interest
Feb 17, 2016
From: CHANG, JOSEPHINE B.; DORIS, BRUCE B.; GUILLORN, MICHAEL A.; LAUER, ISAAC
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037754/0509 →
Assignment of Assignor's Interest
Mar 15, 2016
From: MURRAY, CONAL E.; YANG, CHIH-CHAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037982/0799 →
Assignment of Assignor's Interest
Mar 23, 2016
From: MURRAY, CONAL E.; YANG, CHIH-CHAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038079/0159 →
Assignment of Assignor's Interest
Apr 12, 2016
From: BRIGGS, BENJAMIN D.; NOGAMI, TAKESHI; PATLOLLA, RAGHUVEER R.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038258/0383 →
Assignment of Assignor's Interest
Jun 14, 2016
From: BASKER, VEERARAGHAVAN S.; CHENG, KANGGUO; STANDAERT, THEODORUS E.; WANG, JUNLI
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038911/0710 →
Assignment of Assignor's Interest
Jun 14, 2016
From: BASKER, VEERARAGHAVAN S.; CHENG, KANGGUO; STANDAERT, THEODORUS E.; WANG, JUNLI
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038911/0733 →
Assignment of Assignor's Interest
Jun 30, 2016
From: CHENG, KANGGUO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039059/0717 →
Assignment of Assignor's Interest
Jul 8, 2016
From: BRIGGS, BENJAMIN DAVID; CLEVENGER, LAWRENCE A.; DEPROSPO, BARTLET H.; HUANG, HUAI
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039110/0300 →
Security Interest
Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
Assignment of Assignor's Interest
Nov 15, 2017
From: CHENG, KANGGUO; LI, JUNTAO; WU, HENG; XU, PENG
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 044140/0537 →
Assignment of Assignor's Interest
Nov 15, 2017
From: BASKER, VEERARAGHAVAN S.; CHENG, KANGGUO; STANDAERT, THEODORUS E.; WANG, JUNLI
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 044130/0081 →
Assignment of Assignor's Interest
Jan 6, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 051489/0557 →
Assignment of Assignor's Interest
Jan 7, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 051493/0546 →
Security Interest
Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
Release of Security Interest
Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION
Reel/Frame 052920/0001 →
Change of Name
Sep 27, 2024
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 069067/0410 →