FinFET devices
FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
1. A method of forming a semiconductor structure, the method comprising:
forming a plurality of fin structures which are supported by lined insulator material, wherein the lined insulator material is formed on an in-situ doped material.
2. The method of claim 1 , wherein the lined insulator material includes a low-k dielectric spacer.
3. The method of claim 1 , wherein the low-k dielectric spacer is a SiCBN or SiOCN.
4. The method of claim 1 , wherein the lining is a low-k dielectric material on the drain side and the lining is a high-k dielectric on the source side.
5. The method of claim 1 , wherein the in-situ doped material is BSiGe for a PFET and SiP for an NFET.
6. The method of claim 1 , wherein the in-situ doped material is Si:CP or Si:P for an NFET.
7. A method of forming a semiconductor structure, the method comprising:
forming a plurality of fin structures which are supported by lined insulator material, wherein lining of the lined insulator material alternates between different material on a source side and drain side of the plurality of fin structures.
8. A method of forming a semiconductor structure, the method comprising:
forming a plurality of fin structures which are supported by lined insulator material wherein, for one of the plurality of fin structures:
the lined insulator material on a first side of the one of the plurality of fin structures comprises a first oxide formed on a first epitaxial material and lined by a first dielectric material; and
the lined insulator material on a second side of the one of the plurality of fin structures comprises a second oxide formed on a second epitaxial material and lined by a second dielectric material.
9. The method of claim 8 , wherein the first oxide and the second oxide are different types of oxide.
10. The method of claim 8 , wherein:
the first oxide comprises a high density plasma (HDP) oxide; and
the second oxide comprises a flowable oxide.
11. The method of claim 8 , wherein the first epitaxial material and the second epitaxial material are different types of material.
12. The method of claim 8 , wherein the first epitaxial material and the second epitaxial material have different dopants.
13. The method of claim 8 , wherein the first epitaxial material and the second epitaxial material have different dopant concentrations.
14. The method of claim 8 , wherein the first dielectric material and the second dielectric material are different types of dielectric material.
15. The method of claim 8 , wherein:
the first dielectric material is a high-k dielectric material; and
the second dielectric material is a low-k dielectric material.
16. The method of claim 8 , wherein:
the first oxide and the second oxide are different types of oxide;
the first epitaxial material and the second epitaxial material are different types of material; and
the first dielectric material and the second dielectric material are different types of dielectric material.
17. The method of claim 8 , wherein:
the first oxide and the second oxide are different types of oxide; and
the first epitaxial material and the second epitaxial material are different types of material.
18. The method of claim 8 , wherein:
the first oxide and the second oxide are different types of oxide; and
the first dielectric material and the second dielectric material are different types of dielectric material.
19. The method of claim 8 , wherein:
the first epitaxial material and the second epitaxial material are different types of material; and
the first dielectric material and the second dielectric material are different types of dielectric material.