Forming a sacrificial liner for dual channel devices
A semiconductor device includes one or more fins. Each fin includes a top channel portion formed from a channel material, a middle portion, and a bottom substrate portion formed from a same material as an underlying substrate. An oxide layer is formed between the bottom substrate portion of each fin and the isolation layer, with a space between a sidewall of at least a top portion of the isolation dielectric layer and an adjacent sidewall of the one or more fins, above the oxide layer. A gate dielectric, protruding into the space and in contact with the middle portion, is formed over the one or more fins and has a portion formed from a material different from the oxide layer.
1. A semiconductor device, comprising:
two adjacent fins, each fin comprising:
a top channel portion comprising a first channel material;
a middle portion comprising a material different from the first channel material; and
a bottom substrate portion comprising a same material as an underlying substrate, the same material being different from the first channel material;
an isolation dielectric layer disposed between and around the bottom substrate portion of the two adjacent fins; and
a gate dielectric layer disposed on (i) a top surface of the top channel portion of each of the fins, (ii) opposing sidewall surfaces of the top channel portion of each of the fins, (iii) opposing sidewall surfaces of the middle portion of each of the fins, and (iv) a top surface of the isolation dielectric layer,
wherein a bottom surface of the top channel portion of each of the fins of the two adjacent fins is wider than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
2. The semiconductor device of claim 1 , wherein a top surface of the isolation dielectric layer extends farther vertically from the underlying substrate than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
3. The semiconductor device of claim 1 , further comprising a third fin adjacent to one of the two adjacent fins, the third fin comprising:
a top channel portion comprising a second channel material that is different from the first channel material;
a middle portion; and
a bottom substrate portion comprising the same material as the underlying substrate.
4. The semiconductor device of claim 3 , wherein the first channel material of the two adjacent fins comprises silicon germanium.
5. The semiconductor device of claim 4 , wherein the second channel material of the top channel portion of the third fin comprises silicon.
6. The semiconductor device of claim 1 , further comprising an oxide layer between the bottom substrate portion of the two adjacent fins and the isolation dielectric layer.
7. The semiconductor device of claim 6 , wherein the gate dielectric layer contacts the oxide layer.
8. A semiconductor device, comprising:
two adjacent fins, each fin comprising:
a top channel portion comprising a channel material, wherein the top channel portion of a first fin of the two adjacent fins comprises a first channel material, and wherein the top channel portion of a second fin of the two adjacent fins comprises a second channel material, the second channel material being different from the first channel material;
a middle portion comprising a material different from at least one of the first channel material or the second channel material; and
a bottom substrate portion comprising a same material as an underlying substrate, the same material being different from at least one of the first channel material or the second channel material;
an isolation dielectric layer disposed between and around the bottom substrate portion of the two adjacent fins; and
a gate dielectric layer disposed on (i) a top surface of the top channel portion of each of the fins, (ii) opposing sidewall surfaces of the top channel portion of each of the fins, (iii) opposing sidewall surfaces of the middle portion of each of the fins, and (iv) a top surface of the isolation dielectric layer.
9. The semiconductor device of claim 8 , wherein a bottom surface of the top channel portion of each of the fins of the two adjacent fins is narrower than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
10. The semiconductor device of claim 8 , wherein a bottom surface of the top channel portion of each of the fins of the two adjacent fins is wider than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
11. The semiconductor device of claim 8 , wherein a top surface of the isolation dielectric layer extends farther vertically from the underlying substrate than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
12. The semiconductor device of claim 8 , further comprising a third fin adjacent to one of the two adjacent fins, the third fin comprising:
a top channel portion comprising the first channel material;
a middle portion; and
a bottom substrate portion comprising the same material as the underlying substrate.
13. The semiconductor device of claim 8 , wherein the first channel material comprises silicon germanium.
14. The semiconductor device of claim 13 , wherein the second channel material comprises silicon.
15. The semiconductor device of claim 8 , further comprising an oxide layer between the bottom substrate portion of the two adjacent fins and the isolation dielectric layer.
16. The semiconductor device of claim 15 , wherein the gate dielectric layer contacts the oxide layer.
17. A semiconductor device, comprising:
two adjacent fins, each fin comprising:
a top channel portion comprising a channel material;
a middle portion comprising a material different from the channel material; and
a bottom substrate portion comprising a same material as an underlying substrate, the same material being different from the channel material;
an isolation dielectric layer disposed between and around the bottom substrate portion of the two adjacent fins; and
a gate dielectric layer disposed on (i) a top surface of the top channel portion of each of the fins, (ii) opposing sidewall surfaces of the top channel portion of each of the fins, (iii) opposing sidewall surfaces of the middle portion of each of the fins, and (iv) a top surface of the isolation dielectric layer,
wherein a top surface of the isolation dielectric layer extends farther vertically from the underlying substrate than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
18. The semiconductor device of claim 17 , wherein the channel material comprises silicon germanium.
19. The semiconductor device of claim 17 , wherein a bottom surface of the top channel portion of each of the fins of the two adjacent fins is narrower than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
20. The semiconductor device of claim 17 , wherein a bottom surface of the top channel portion of each of the fins of the two adjacent fins is wider than a top surface of the bottom substrate portion of each of the fins of the two adjacent fins.
21. The semiconductor device of claim 20 , further comprising an oxide layer between the bottom substrate portion of the two adjacent fins and the isolation dielectric layer.
22. The semiconductor device of claim 21 , wherein the gate dielectric layer contacts the oxide layer.