Patent Assignment
Reel/Frame 069067/0448
Change of Name
Recorded: 2024-09-27
Pages: 6
Assignor
TESSERA LLC
Executed: 2022-08-15
Assignee
ADEIA SEMICONDUCTOR SOLUTIONS LLC
3025 ORCHARD PARKWAY, SAN JOSE, CALIFORNIA, 95134
Covered Properties
(54)
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Patent:
9,601,514 →
Application:
15/006,284 →
Nanowire with Sacrificial Top Wire
Semiconductor Interconnect Structure with Double Conductors
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Patent:
9,768,072 →
Application:
15/199,352 →
Selective Recessing to Form a Fully Aligned Via
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Nanosheet Channel-to-Source and Drain Isolation
Patent:
9,620,590 →
Application:
15/270,109 →
Forming a Sacrificial Liner for Dual Channel Devices
Patent:
9,773,893 →
Application:
15/276,029 →
Nanosheet Channel-to-Source and Drain Isolation
Forming a Sacrificial Liner for Dual Channel Devices
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Patent:
9,934,970 →
Application:
15/403,371 →
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Semiconductor Interconnect Structure with Double Conductors
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Forming a Sacrificial Liner for Dual Channel Devices
Forming a Sacrificial Liner for Dual Channel Devices
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Selective Recessing to Form a Fully Aligned Via
Selective Recessing to Form a Fully Aligned Via
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Nanowire with Sacrificial Top Wire
Field effect transistor structures
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Nanosheet Channel-to-Source and Drain Isolation
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Forming a Sacrificial Liner for Dual Channel Devices
Forming a Sacrificial Liner for Dual Channel Devices
Nanosheet Channel-to-Source and Drain Isolation
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Semiconductor Interconnect Structure with Double Conductors
Selective Recessing to Form a Fully Aligned Via
Method and Structure for Forming Dielectric Isolated Finfet with Improved Source/Drain Epitaxy
Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Field Effect Transistor Structures
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Semiconductor Device Including a Porous Dielectric Layer, and Method of Forming the Semiconductor Device
Nanosheet Channel-to-Source and Drain Isolation
Selective Recessing to Form a Fully Aligned Via
Semiconductor Device with Reduced via Resistance
Application:
17/953,037 →
Publication:
US 2023/0013937
Nanosheet Channel-to-Source and Drain Isolation
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Semiconductor Interconnect Structure with Double Conductors
Application:
18/793,294 →
Publication:
US 2024/0395702
Self Aligned Pattern Formation Post Spacer Etchback in Tight Pitch Configurations
Application:
18/818,265 →
Publication:
US 2025/0062126
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jan 26, 2016
From: CHENG, KANGGUO; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037582/0352 →
Assignment of Assignor's Interest
Feb 17, 2016
From: CHANG, JOSEPHINE B.; DORIS, BRUCE B.; GUILLORN, MICHAEL A.; LAUER, ISAAC
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 037754/0509 →
Assignment of Assignor's Interest
Apr 12, 2016
From: BRIGGS, BENJAMIN D.; NOGAMI, TAKESHI; PATLOLLA, RAGHUVEER R.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 038258/0383 →
Assignment of Assignor's Interest
Jun 30, 2016
From: CHENG, KANGGUO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039059/0717 →
Assignment of Assignor's Interest
Jul 8, 2016
From: BRIGGS, BENJAMIN DAVID; CLEVENGER, LAWRENCE A.; DEPROSPO, BARTLET H.; HUANG, HUAI
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039110/0300 →
Assignment of Assignor's Interest
Aug 5, 2016
From: BRIGGS, BENJAMIN D.; DECHENE, JESSICA; HUANG, ELBERT E.; LEE, JOE
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039354/0842 →
Assignment of Assignor's Interest
Sep 1, 2016
From: CHENG, KANGGUO; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039616/0372 →
Assignment of Assignor's Interest
Sep 20, 2016
From: BERGENDAHL, MARC A.; CHENG, KANGGUO; LIE, FEE LI; MILLER, ERIC R.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039794/0187 →
Assignment of Assignor's Interest
Sep 26, 2016
From: BU, HUIMING; CHENG, KANGGUO; GUO, DECHAO; KANAKASABAPATHY, SIVANANDA K.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 039857/0811 →
Assignment of Assignor's Interest
Nov 18, 2016
From: BERGENDAHL, MARC A.; CHENG, KANGGUO; LIE, FEE LI; MILLER, ERIC R.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040368/0796 →
Assignment of Assignor's Interest
Dec 30, 2016
From: BU, HUIMING; CHENG, KANGGUO; GUO, DECHAO; KANAKASABAPATHY, SIVANANDA K.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040811/0158 →
Assignment of Assignor's Interest
Jan 11, 2017
From: BURNS, SEAN D.; CLEVENGER, LAWRENCE A.; COLBURN, MATTHEW E.; FELIX, NELSON M.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 040944/0879 →
Assignment of Assignor's Interest
Feb 6, 2017
From: CHENG, KANGGUO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 041181/0406 →
Assignment of Assignor's Interest
Mar 21, 2017
From: CHENG, KANGGUO; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 041663/0816 →
Assignment of Assignor's Interest
May 8, 2017
From: CHENG, KANGGUO; LI, JUNTAO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 042274/0154 →
Assignment of Assignor's Interest
May 31, 2017
From: BRIGGS, BENJAMIN D.; NOGAMI, TAKESHI; PATLOLLA, RAGHUVEER R.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 042547/0245 →
Assignment of Assignor's Interest
Jun 20, 2017
From: CHENG, KANGGUO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 042758/0835 →
Assignment of Assignor's Interest
Jun 21, 2017
From: BU, HUIMING; CHENG, KANGGUO; GUO, DECHAO; KANAKASABAPATHY, SIVANANDA K.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 042772/0143 →
Assignment of Assignor's Interest
Jul 18, 2017
From: BU, HUIMING; CHENG, KANGGUO; GUO, DECHAO; KANAKASABAPATHY, SIVANANDA K.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 043034/0558 →
Assignment of Assignor's Interest
Jan 6, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 051489/0557 →
Assignment of Assignor's Interest
Jan 6, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 051489/0324 →
Assignment of Assignor's Interest
Jan 7, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 051493/0546 →
Security Interest
Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
Corrective Assignment to Correct the 16/161,111 Previously Recorded on Reel 051489 Frame 0324. Assignor(S) Hereby Confirms the Assignment.
Aug 3, 2020
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: TESSERA, INC.
Reel/Frame 053389/0252 →
Certificate of Conversion & Change of Name
Sep 7, 2022
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 061388/0199 →