Self aligned pattern formation post spacer etchback in tight pitch configurations
View Patent ↗A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.
1. An etch method comprising:
forming a plurality of mandrel structures on a substrate;
forming first dielectric spacers on sidewalls of said plurality of mandrel structures;
forming a fill of non-mandrel structures in space between adjacent first dielectric spacers;
forming second dielectric spacers on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer in the etch window, wherein the second dielectric spacers cover said first dielectric spacers that do not include the connecting portion and the second dielectric spacers have a height greater than said first dielectric spacers;
removing the connecting portion of the centralized first dielectric spacer; and
etching the substrate using the first dielectric spacers and a remaining portion of the centralized first dielectric material, wherein an opening is formed from the space provide by said removing the connecting portion of the centralized first dielectric spacer that connects a first trench proximate to the mandrel structure and a second trench proximate to the non-mandrel structure.
2. The etch method of claim 1 , wherein the substrate is a silicon containing dielectric layer that is to be etched and filled to provide a metal line.
3. The etch method of claim 1 , wherein forming the first dielectric spacers on sidewalls of the mandrel structures comprises conformally depositing a material layer for the dielectric spacers on the plurality of mandrel structures, and etching the material layer, wherein the horizontally orientated portions are removed, and the vertically orientated portions of the material layer remains to provide the first dielectric spacers.
4. The etch method of claim 1 , wherein forming said etch mask comprises:
depositing a photoresist layer;
patterning the photoresist layer to provide said etch window, wherein the etch window exposes the connecting portion of the centralized first dielectric spacer.
5. The etch method of claim 1 , wherein said removing the connecting portion of the centralized first dielectric spacer comprises an etch that is selective to the second dielectric spacers.
6. The etch method of claim 1 , further comprising removing the mandrel structures and non-mandrel structures selectively to the first dielectric spacers.
7. The etch method of claim 1 , wherein the mandrel structures, the non-mandrel structure and the first dielectric spacers have geometries that are arranged to provide a self-aligned double patterning (SADP) etch process.
8. A method of forming a structure for etch masking comprising:
forming first dielectric spacers on sidewalls of a plurality of mandrel structures;
forming a fill of non-mandrel structures in space between adjacent first dielectric spacers;
forming second dielectric spacers on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer in the etch window, wherein the second dielectric spacers cover said first dielectric spacers that do not include the connecting portion, and the second dielectric spacers have a height greater than said first dielectric spacers;
removing the connecting portion of the centralized first dielectric spacer; and
removing the mandrel structures and non-mandrel structures, wherein remaining portions of the first dielectric spacers provide an etch mask, and the connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench proximate to the mandrel structures and a second trench proximate to the non-mandrel structures.
9. The method of claim 8 , wherein forming the first dielectric spacers on sidewalls of the mandrel structures comprises conformally depositing a material layer for the dielectric spacers on the plurality of mandrel structures, and etching the material layer, wherein the horizontally orientated portions are removed, and the vertically orientated portions of the material layer remains to provide the first dielectric spacers.
10. The method of claim 8 , wherein forming said etch mask comprises:
depositing a photoresist layer;
patterning the photoresist layer to provide said etch window, wherein the etch window exposes the connecting portion of the centralized first dielectric spacer.
11. The method of claim 8 , wherein said removing the connecting portion of the centralized first dielectric spacer comprises an etch that is selective to the second dielectric spacers.
12. The method of claim 8 , wherein said removing the mandrel structures and non-mandrel structures comprises an etch that is selective to the first dielectric spacers.
13. The method of claim 8 , wherein the mandrel structures, the non-mandrel structure and the first dielectric spacers have geometries that are arranged to provide a self-aligned double patterning (SADP) etch process.