Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

1. A method of forming a semiconductor device, comprising:

forming a porous dielectric layer including a recessed portion;

forming a conductive layer in the recessed portion of the porous dielectric layer;

forming a conformal cap layer on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the conformal cap layer; and

performing a heat treatment to burn out a pore filler of the porous dielectric layer through the exposed upper surface of the porous dielectric layer and the gap in the conformal cap layer.

2. The method of claim 1 , wherein the forming of the conductive layer comprises:

partially removing a top portion of the conductive layer while maintaining a height of the porous dielectric layer.

3. The method of claim 2 , wherein the forming of the conformal cap layer comprises:

polishing the conformal cap layer to form the gap in the conformal cap layer.

4. The method of claim 3 , wherein the performing of the heat treatment is performed in a processing chamber and a vacuum is pulled in the chamber in order to draw the pore filler out of the porous dielectric layer.

5. The method of claim 4 , wherein after the performing of the heat treatment, a dielectric constant of the porous dielectric material is less than 2.4.

6. The method of claim 4 , wherein an upper surface of the conformal cap layer includes a concave portion.

7. The method of claim 6 , further comprising:

forming an interlayer dielectric in the concave portion of the conformal cap layer.

8. The method of claim 7 , wherein an upper surface of the interlayer dielectric is co-planar with an upper surface of the conformal cap layer and an upper surface of the porous dielectric layer.

9. The method of claim 4 , wherein an upper portion of the conformal cap layer has a width which is greater than a width of a lower portion of the conformal cap layer.

10. The method of claim 4 , wherein a temperature of the heat treatment is in a range from 200° C. to 450° C., and duration of the heat treatment is in a range from 1 minute to 30 minutes.

11. The method of claim 4 , wherein the forming of the conductive layer comprises:

depositing a metal on the porous dielectric layer and in the recessed portion;

polishing the metal and the porous dielectric layer; and

etching the porous dielectric layer and the metal in the recessed portion to form the conductive layer.

12. The method of claim 11 , wherein the forming of the conformal cap layer comprises forming the conformal cap layer on the etched porous dielectric layer and the etched metal.

13. The method of claim 4 , wherein the forming of the porous dielectric material comprises forming the porous dielectric material on an interconnect layer.

14. The method of claim 4 , wherein the gap in the conformal cap layer comprises a length which is greater than an average pore diameter of pores the porous dielectric layer.

15. The method of claim 4 , wherein an average pore diameter of pores the porous dielectric layer is greater than 1.5 nm, and a porosity of the porous dielectric layer is in a range from 0.1 vol. % and about 50 vol. %.

16. A method of forming a semiconductor device, comprising:

forming a conductive layer in a recessed portion of a porous dielectric layer;

forming a conformal cap layer on the porous dielectric layer and the conductive layer in the recessed portion;

exposing an upper surface of the porous dielectric layer by forming a gap in the conformal cap layer; and

performing a heat treatment to burn out a pore filler of the porous dielectric layer through the exposed upper surface of the porous dielectric layer and the gap in the conformal cap layer.

17. The method of claim 16 , further comprising:

before the forming of the conformal cap layer, partially removing a top portion of the conductive layer while maintaining a height of the porous dielectric layer.