Copper interconnect structure with manganese oxide barrier layer
View Patent ↗Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.
1. An interconnect structure comprising:
a copper interconnect structure formed in a dielectric material;
a capping layer in contact with a top surface of the copper interconnect structure, wherein an interface of a bottom surface of the capping layer and the top surface of the copper interconnect structure is co-planar with a top surface of the dielectric material; and
a barrier layer outdiffused on a top surface and side surfaces of the capping layer, wherein the copper interconnect structure comprises:
a layer of Ag, Zn, or Sn;
a layer of CuMn directly on the layer of Ag, Zn, or Sn; and
an electroplated copper layer on the CuMn layer; and
the barrier layer comprises Mn outdiffused from the CuMn layer to the top surface and side surfaces of the capping layer during an anneal process.
2. The interconnect structure of claim 1 , wherein the capping layer is composed of a same material as the layer of Ag, Zn, or Sn.
3. The interconnect structure of claim 1 , wherein the bottom surface of the capping layer is directly on the top surface of the copper interconnect structure.
4. An interconnect structure comprising:
a dielectric material;
a first layer contacting the dielectric material;
a second layer contacting the first layer, the second layer comprising Mn;
a copper layer contacting the second layer;
a capping layer contacting an upper surface of the copper layer; and
a barrier layer contacting a top surface and side surfaces of the capping layer, the barrier layer comprising Mn outdiffused from the second layer.
5. The interconnect structure of claim 4 , wherein a percent Mn of the second layer is in a range of between 0.5 and 20 atomic percent.
6. The interconnect structure of claim 4 , wherein the upper surface of the capping layer is higher than an upper surface of the dielectric material.
7. The interconnect structure of claim 4 , wherein:
the first layer, the second layer, and the copper layer are in an opening of the dielectric material; and
the capping layer and the barrier layer are outside the opening of the dielectric material.
8. The interconnect structure of claim 4 , wherein the capping layer extends entirely across the upper surface of the copper layer.
9. The interconnect structure of claim 4 , wherein an interface of a bottom surface of the capping layer and the upper surface of the copper layer is co-planar with a top surface of the dielectric material.
10. The interconnect structure of claim 4 , wherein:
the first layer is TaN; and
the second layer is directly on the first layer.
11. The interconnect structure of claim 4 , wherein:
the first layer is composed of a material selected from the group consisting of: Ag, Zn, and Sn; and
the capping layer is composed of a same material as the first layer.