Minimizing shorting between FinFET epitaxial regions
View Patent ↗The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.
1. A structure comprising:
a first gate separated from a second gate by a dielectric region;
a first semiconductor fin associated with the first gate;
a second semiconductor fin associated with the second gate; and
a continuous spacer surrounding the first gate, the second gate, and the dielectric region, the continuous spacer directly contacting vertical sidewalls of each of the first gate, the second gate, and the dielectric region.
2. The structure of claim 1 , wherein the dielectric region comprises an oxide, a nitride, or an oxynitride.
3. The structure of claim 1 , wherein at least one of the first gate or the second gate comprises copper, tungsten, gold, aluminum, ruthenium, titanium, platinum, or alloys thereof.
4. The structure of claim 1 , wherein at least one of the first gate or the second gate comprises polycrystalline silicon.
5. The structure of claim 1 , wherein a dimension of the first gate is less than a dimension of the dielectric region, and a dimension of the second gate is less than the dimension of the dielectric region.
6. The structure of claim 1 , further comprising:
a first epitaxial region on an exposed portion of the first semiconductor fin associated with the first gate; and
a second epitaxial region on an exposed portion of the second semiconductor fin associated with the second gate, wherein the dielectric region isolates the first epitaxial region from the second epitaxial region.
7. The structure of claim 1 , wherein the first semiconductor fin is part of a first fin group and the second semiconductor fin is part of a second fin group.
8. A structure comprising:
a first metal gate perpendicular to and covering a portion of a first set of fins;
a second metal gate perpendicular to and covering a portion of a second set of fins;
a dielectric region separating the first metal gate from the second metal gate, wherein the dielectric region separates a first source/drain region on the first set of fins and a second source/drain region on the second set of fins; and
a continuous spacer surrounding the first metal gate, the second metal gate, and the dielectric region, the continuous spacer directly contacting vertical sidewalls of each of the first metal gate, the second metal gate, and the dielectric region.
9. The structure of claim 8 , wherein the dielectric region comprises an oxide, a nitride, or an oxynitride.
10. The structure of claim 8 , wherein at least one of the first metal gate or the second metal gate comprises copper, tungsten, gold, aluminum, ruthenium, titanium, platinum, or alloys thereof.
11. The structure of claim 8 , wherein at least one of the first metal gate or the second metal gate comprises polycrystalline silicon.
12. The structure of claim 8 , wherein a dimension of the first metal gate is less than a dimension of the dielectric region, and a dimension of the second metal gate is less than the dimension of the dielectric region.
13. The structure of claim 8 , further comprising:
a first epitaxial region on an exposed portion of a first semiconductor fin associated with the first metal gate; and
a second epitaxial region on an exposed portion of a second semiconductor fin associated with the second metal gate, wherein the dielectric region isolates the first epitaxial region from the second epitaxial region.
14. A structure comprising:
a gate structure on a portion of a first fin group and a portion of a second fin group, the gate structure comprising a first gate and a second gate, the first fin group being separate from the second fin group by an intermediate region; and
a dielectric region in the intermediate region separating the first gate from the second gate, the dielectric region separating one or more first epitaxial regions on the first fin group from one or more second epitaxial regions on the second fin group,
the gate structure comprising a continuous spacer surrounding the first gate, the second gate, and the dielectric region, the continuous spacer directly contacting vertical sidewalls of each of the first gate, the second gate, and the dielectric region.
15. The structure of claim 14 , wherein the dielectric region comprises an oxide, a nitride, or an oxynitride.
16. The structure of claim 14 , wherein at least one of the first gate or the second gate comprises copper, tungsten, gold, aluminum, ruthenium, titanium, platinum, or alloys thereof.
17. The structure of claim 14 , wherein at least one of the first gate or the second gate comprises polycrystalline silicon.
18. The structure of claim 14 , wherein a dimension of the first gate is less than a dimension of the dielectric region, and a dimension of the second gate is less than the dimension of the dielectric region.
19. The structure of claim 14 , wherein the dielectric region is above and directly contacts a semiconductor substrate.
20. The structure of claim 14 , further comprising:
a first epitaxial region on an exposed portion of a first semiconductor fin associated with the first gate; and
a second epitaxial region on an exposed portion of a second semiconductor fin associated with the second gate, wherein the dielectric region isolates the first epitaxial region from the second epitaxial region.