Interconnect structure with barrier layer
Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.
1. An interconnect structure comprising:
a copper interconnect structure formed in a dielectric material, the copper interconnect structure on and contacting a CuMn layer;
a capping layer in contact with a top surface of the copper interconnect structure, wherein an interface of a bottom surface of the capping layer and the top surface of the copper interconnect structure is co-planar with a top surface of the dielectric material; and
a barrier layer outdiffused on an upper surface of the capping layer, the barrier layer comprising Mn outdiffused from the CuMn layer.
2. The interconnect structure of claim 1 , wherein the capping layer is Ru, Ag, Zn, Sn or Ni and the barrier layer is MnO.
3. The interconnect structure of claim 2 , further comprising a barrier layer at an interface of the copper interconnect structure and the dielectric material.
4. The interconnect structure of claim 1 , wherein the capping layer is cobalt and the barrier layer is MnO.
5. The interconnect structure of claim 4 , further comprising a barrier layer at an interface of the copper interconnect structure and the dielectric material.
6. The interconnect structure of claim 5 , wherein the capping layer is oxidized.
7. The interconnect structure of claim 6 , wherein the copper interconnect structure comprises:
a layer of Tantalum Nitride (TaN);
a layer of CuMn on the TaN layer; and
an electroplated copper layer on the CuMn layer; and
the barrier layer comprises outdiffusing Mn to a surface of the capping layer during an anneal process.
8. The interconnect structure of claim 6 , wherein the copper interconnect structure comprises:
a layer of Ru, Ag, Zn, Sn or Ni;
a layer of CuMn on the Ru, Ag, Zn, Sn or Ni layer; and
an electroplated copper layer on the CuMn layer; and
the barrier layer comprises Mn outdiffused from the CuMn layer to the surface of the capping layer during an anneal process.
9. The interconnect structure of claim 6 , wherein the copper interconnect structure comprises:
a layer of cobalt;
a layer of CuMn on the cobalt layer;
an electroplated a copper layer on the CuMn layer; and
the barrier layer comprises Mn outdiffused from the CuMn layer to the surface of the capping layer during an anneal process.
10. The interconnect structure of claim 9 , wherein the barrier layer is formed at an interface of dielectric material and the cobalt.
11. The interconnect structure of claim 1 , wherein the capping layer extends entirely across a topmost surface of the copper interconnect structure.
12. An interconnect structure comprising:
a dielectric material;
an underlying barrier layer on and contacting the dielectric material;
a CuMn layer on and contacting the underlying barrier layer;
a copper layer on and contacting the CuMn layer;
a capping layer on and contacting the electroplated copper layer, the capping layer comprising Co; and
a barrier layer on and contacting an upper surface of the capping layer, the barrier layer comprising Mn outdiffused from the CuMn layer,
wherein the capping layer extends entirely across a topmost surface of the copper layer; and
an interface of a bottom surface of the capping layer and the top surface of the copper interconnect structure is co-planar with a top surface of the dielectric material.
13. The interconnect structure of claim 12 , wherein a percent Mn of the CuMn layer is in a range of between 0.5 and 20 atomic percent.
14. The interconnect structure of claim 12 , wherein a topmost surface of the capping layer is higher than a top surface of the dielectric material.
15. The interconnect structure of claim 12 , wherein:
the underlying barrier layer, the CuMn layer, and the copper layer are in an opening of the dielectric material; and
the capping layer and the barrier layer are outside the opening of the dielectric material.