Nanosheet transistor
Inner and outer spacers for nanosheet transistors are formed using techniques that improve junction uniformity. One nanosheet transistor device includes outer spacers and an interlevel dielectric layer liner made from the same material. A second nanosheet transistor device includes outer spacers, inner spacers and an interlevel dielectric layer liner that are all made from the same material.
1. A method of fabricating a field-effect transistor comprising:
obtaining a structure including:
a vertical stack comprising a plurality of nanosheet channel layers alternating with a plurality of sacrificial layers,
epitaxial source/drain regions contacting opposite ends of the plurality of nanosheet channel layers,
a plurality of end spaces, each end space located between one of the sacrificial layers and one of the epitaxial source/drain regions, and
a dummy gate having sidewalls extending vertically from a top surface of the vertical stack;
depositing a dielectric material over the dummy gate and the epitaxial source/drain regions, whereby the dielectric material extends into the plurality of end spaces thereby forming (i) outer dielectric spacers on the sidewalls of the dummy gate, (ii) inner dielectric spacers between the sacrificial layers and the epitaxial source/drain regions, and (iii) a dielectric liner over the epitaxial source/drain regions;
forming an interlevel dielectric layer above the epitaxial source/drain regions and the dummy gate; and
replacing the dummy gate and the sacrificial layers with a gate structure.
2. The method of claim 1 , wherein replacing the dummy gate and the sacrificial layers further comprises:
removing the dummy gate to form a trench within the interlevel dielectric layer;
removing the sacrificial layers to form spaces between the plurality of nanosheet channel layers; and
filling the trench and spaces with a gate structure comprising a gate dielectric and gate conductive material.
3. The method of claim 2 , wherein the gate conductive material comprises a work-function metal.
4. The method of claim 1 , wherein the plurality of nanosheet channel layers comprise silicon and the plurality of sacrificial layers comprise silicon germanium.
5. The method of claim 4 , wherein the sacrificial layers have a composition Si x Ge 1-x , where x is between 0.2 and 0.8.
6. The method of claim 5 , wherein the sacrificial layers have the composition Si x Ge 1-x , where x is between 0.2 and 0.3.
7. The method of claim 1 , wherein the dielectric material comprises SiCO.
8. The method of claim 1 , wherein one or more of the plurality of nanosheet channel layers comprise rounded ends.
9. The method of claim 1 , wherein each of the nanosheet channel layers of the plurality of nanosheet channel layers has a thickness in a range of four to ten nanometers.
10. The method of claim 1 , wherein each of the nanosheet channel layers of the plurality of sacrificial layers has a thickness in a range of six to twenty nanometers.
11. A method of fabricating a field-effect transistor comprising:
obtaining a structure including:
a vertical stack comprising a plurality of nanosheet channel layers alternating with a plurality of sacrificial layers,
a plurality of first inner spacers comprising a first material on opposite sidewalls of the sacrificial layers,
epitaxial source/drain regions contacting opposite ends of the plurality of nanosheet channel layers and outer sidewalls of the plurality of first inner spacers, and
a dummy gate having sidewalls extending vertically from a top surface of the vertical stack; and
replacing the first inner spacers comprising the first material with a second material to form a plurality of second inner spacers.
12. The method of claim 11 , wherein the plurality of nanosheet channel layers comprise silicon and the plurality of sacrificial layers comprise silicon germanium.
13. The method of claim 12 , wherein the sacrificial layers have a composition Si x Ge 1-x , where x is between 0.2 and 0.8.
14. The method of claim 13 , wherein the sacrificial layers have the composition Si x Ge 1-x , where x is between 0.2 and 0.3.
15. The method of claim 11 , wherein the plurality of first inner spacers comprise oxidized silicon germanium.
16. The method of claim 11 , further comprising narrowing a width of the dummy gate before replacing the first material comprising the first inner spacers.
17. The method of claim 16 , further comprising forming outer dielectric spacers on the sidewalls of the dummy gate.
18. The method of claim 11 , wherein replacing the first material comprising the first inner spacers further comprises:
etching the plurality of first inner spacers to create a plurality end spaces between the plurality of sacrificial layers and the epitaxial source/drain regions; and
depositing the second material to form the plurality of second inner spacers.
19. The method of claim 18 , wherein etching the plurality of first inner spacers comprises using a dilute hydrofluoric acid (HF) solution.
20. The method of claim 11 , further comprising forming outer dielectric spacers on the sidewalls of the dummy gate.
21. The method of claim 11 , wherein the plurality of second inner spacers comprise SiCO.