FinFET devices
View Patent ↗FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
1. A method, comprising:
forming trenches in semiconductor material;
filling the trenches with insulator material;
forming additional trenches in the semiconductor material to form gate structures; and
providing a doped epitaxial growth at a bottom of the trenches.
2. The method of claim 1 , wherein the additional trenches are formed alternating with the trenches.
3. The method of claim 2 , wherein the additional trenches formed in the semiconductor material to form gate structures are anchored by the filled trenches.
4. The method of claim 2 , wherein the additional trenches formed in the semiconductor material to form gate structures are anchored by the insulator material in the filled trenches.
5. The method of claim 1 , further comprising filling the additional trenches with insulator material.
6. The method of claim 5 , further comprising recessing the insulator material within the trenches and the additional trenches to form fin structures.
7. The method of claim 6 , wherein the trenches are lined with a liner material, prior to the filling with the insulator material.
8. The method of claim 7 , wherein the additional trenches are lined with a liner material, prior to the filling with the insulator material.
9. The method of claim 8 , further comprising providing a doped epitaxial growth at a bottom of the additional trenches.
10. The method of claim 9 , wherein the doped epitaxial growth at the bottom of the additional trenches is provided on another side of a device with respect to the doped epitaxial growth at the bottom of the trenches.
11. The method of claim 9 , wherein the doped epitaxial growth at the bottom of the additional trenches is different than the doped epitaxial growth at the bottom of the trenches.
12. The method of claim 1 , wherein:
forming the trenches comprises:
forming a plurality of mandrels on an insulator layer;
forming sidewall spacers on the plurality of mandrels;
removing the plurality of mandrels, leaving a space between the sidewall spacers; and
etching into the semiconductor material within the space between the sidewall spacers; and
forming the additional trenches comprises:
removing the sidewall spacers;
forming inner sidewall spacers on upper portions of the insulator material that filled the first set of trenches; and
etching into the semiconductor material within spaces between adjacent ones of the inner sidewall spacers.