Semiconductor device formed by wet etch removal of Ru selective to other metals
A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer. The interface layer is selectively wet etched to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7. The barrier layer is selectively etching to the main conductor and the interface layer.
1. A semiconductor device, comprising:
a substrate including semiconductor components;
a dielectric layer formed over the substrate;
a barrier layer formed in a trench formed in the dielectric layer;
a ruthenium (Ru) interface layer formed over the barrier layer;
a main conductor formed over the interface layer;
a recess formed by recessing the barrier layer, the interface layer and the main conductor in the trench below a top surface of the dielectric layer, wherein the barrier layer is recessed to a same level as a common surface of the main conductor and the interface layer; and
a conductive structure contacting the main conductor, the conductive structure including a second ruthenium (Ru) interface layer.
2. The device as recited in claim 1 , wherein the recess is filled with a conductive material to form a self-aligned conductor.
3. The device as recited in claim 1 , wherein the barrier layer includes TaN and the main conductor includes Cu.
4. The device as recited in claim 1 , wherein the conductive structure further includes a second barrier layer formed in a second trench that includes the recess, and wherein the second interface layer is formed over the second barrier layer.
5. The device as recited in claim 4 , wherein the second trench is formed to the common surface.
6. The device as recited in claim 4 , wherein the second trench is formed in a second dielectric layer formed on the substrate.
7. The device as recited in claim 4 , wherein the conductive structure further includes a second dielectric layer conformally formed on the second barrier layer.
8. The device as recited in claim 1 , wherein the conductive structure further includes a second main conductor formed over the second interface layer.
9. A semiconductor device, comprising:
a substrate including semiconductor components;
a dielectric layer formed over the substrate;
a barrier layer formed in a trench formed in the dielectric layer;
a ruthenium (Ru) interface layer formed over the barrier layer;
a main conductor formed over the interface layer;
a recess formed by recessing the barrier layer, the interface layer and the main conductor in the trench below a top surface of the dielectric layer, wherein the barrier layer is recessed to a same level as a common surface of the main conductor and the interface layer; and
a conductive structure contacting the main conductor, the conductive structure including:
a second barrier layer formed in a second trench that includes the recess;
a second ruthenium (Ru) interface layer formed over the second barrier layer; and
a second main conductor formed over the second interface layer.
10. The device as recited in claim 9 , wherein the recess is filled with a conductive material to form a self-aligned conductor.
11. The device as recited in claim 9 , wherein the barrier layer includes TaN and the main conductor includes Cu.
12. The device as recited in claim 9 , wherein the second trench is formed to the common surface.
13. The device as recited in claim 9 , wherein the second trench is formed in a second dielectric layer formed on the substrate.
14. The device as recited in claim 13 , wherein the conductive structure further includes a third dielectric layer conformally formed on the second barrier layer.