Wet etch removal of Ru selective to other metals
A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer. The interface layer is selectively wet etched to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7. The barrier layer is selectively etching to the main conductor and the interface layer.
1. A method for forming a conductive structure for a semiconductor device, comprising:
depositing a barrier layer in a trench formed in a dielectric material;
forming an interface layer over the barrier layer;
forming a main conductor over the interface layer;
recessing the main conductor selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer;
wet etching the interface layer selectively to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7; and
etching the barrier layer selectively to the main conductor and the interface layer.
2. The method as recited in claim 1 , wherein the interface layer includes ruthenium (Ru).
3. The method as recited in claim 2 , wherein wet etching the interface layer includes wet etching the interface layer wherein the chemical composition includes the oxidizer, a buffer agent, a pH adjusting agent in an amount sufficient to provide a pH of greater than 7.
4. The method as recited in claim 3 , wherein wet etching the interface layer includes wet etching the interface layer wherein the chemical composition includes about 10 mM periodic acid as the oxidizer, about 10 mM boric acid as the buffer agent and KOH as the pH adjusting agent in an amount sufficient to provide a pH of about 9.
5. The method as recited in claim 3 , wherein wet etching the interface layer includes wet etching the interface layer wherein the chemical composition includes about 10 mM potassium periodate as the oxidizer, about 10 mM sodium periodate as the buffer agent and NaOH as the pH adjusting agent in an amount sufficient to provide a pH of between 7 and 11.
6. The method as recited in claim 2 , wherein the barrier layer includes TaN and the main conductor includes Cu.
7. The method as recited in claim 1 , wherein etching the barrier layer selectively to the main conductor and the interface layer includes etching the barrier layer to a same level as a common surface of the main conductor and the interface layer.
8. The method as recited in claim 1 , wherein the same level as the common surface is below the top surface of the dielectric layer.
9. A method for forming a conductive structure for a semiconductor device, comprising:
depositing a barrier layer in a trench foil led in a dielectric material;
forming a ruthenium (Ru) interface layer over the barrier layer;
forming a main conductor over the interface layer;
recessing the main conductor selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer;
wet etching the interface layer selectively to the main conductor and the barrier layer using a chemical composition including an oxidizer, a buffer agent, a pH adjusting agent in an amount sufficient to provide a basic pH; and
etching the barrier layer selectively to the main conductor and the interface layer.
10. The method as recited in claim 9 , wherein wet etching the interface layer includes wet etching the interface layer wherein the chemical composition includes about 10 mM periodic acid as the oxidizer, about 10 mM boric acid as the buffer agent and KOH as the pH adjusting agent in an amount sufficient to provide the pH of about 9.
11. The method as recited in claim 9 , wherein wet etching the interface layer includes wet etching the interface layer wherein the chemical composition includes about 10 mM potassium periodate as the oxidizer, about 10 mM sodium periodate as the buffer agent and NaOH as the pH adjusting agent in an amount sufficient to provide a pH of between 7 and 11.
12. The method as recited in claim 9 , wherein the barrier layer includes TaN and the main conductor includes Cu.
13. The method as recited in claim 9 , wherein etching the barrier layer selectively to the main conductor and the interface layer includes etching the barrier layer to a same level as a common surface of the main conductor and the interface layer, wherein the same level as the common surface is below the top surface of the dielectric layer.
14. A method for forming a conductive structure for a semiconductor device, comprising:
depositing a barrier layer in a trench formed in a dielectric material;
forming an interface layer over the barrier layer;
forming a main conductor over the interface layer;
concurrently recessing the main conductor and the interface selectively to the barrier layer to a position below a top surface of the dielectric layer by wet etching using a chemical composition having an oxidizer and complexing agent, wherein the chemical composition is buffered to include a basic pH; and
etching the barrier layer selectively to the main conductor and the interface layer.
15. The method as recited in claim 14 , wherein the interface layer includes ruthenium (Ru) and the main conductor includes copper (Cu).
16. The method as recited in claim 14 , wherein wet etching the interface layer includes wet etching the interface layer wherein the chemical composition includes the oxidizer, the complexing agent, a buffer agent, and a pH adjusting agent in an amount sufficient to provide the pH between 7 to 11.
17. The method as recited in claim 16 , wherein wet etching the interface layer includes wet etching the interface layer wherein the chemical composition-includes about 10 mM periodic acid as the oxidizer, about 10 mM boric acid as the buffer agent, about 2.5 mM 2-amino-butyric as the complexing agent and KOH as the pH adjusting agent in an amount sufficient to provide the pH of about 9.
18. The method as recited in claim 14 , wherein wet etching includes wet etching the interface layer and the main conductor at a rate of 3:1.
19. The method as recited in claim 14 , wherein etching the barrier layer selectively to the main conductor and the interface layer includes etching the barrier layer to a same level as a common surface of the main conductor and the interface layer.
20. A method for forming a conductive structure for a semiconductor device, comprising:
depositing a barrier layer in a trench formed in a dielectric material;
forming a ruthenium (Ru) interface layer over the barrier layer;
forming a copper (Cu) main conductor over the interface layer;
concurrently recessing the main conductor and the interface selectively to the barrier layer to a position below a top surface of the dielectric layer by wet etching using a chemical composition having an oxidizer, a buffer agent, a complexing agent and a pH adjusting agent in an amount sufficient to provide a basic pH; and
etching the barrier layer selectively to the main conductor and the interface layer.
21. The method as recited in claim 20 , wherein the chemical composition includes about 10 mM periodic acid as the oxidizer, about 10 mM boric acid as the buffer agent, about 2.5 mM 2-amino-butyric as the complexing agent and KOH as the pH adjusting agent in an amount sufficient to provide the pH of about 9.
22. The method as recited in claim 20 , wherein wet etching includes wet etching the interface layer and the main conductor at a rate of 3:1.