Multi-level metallization interconnect structure

1. A method of forming a semiconductor structure, said method comprising:

providing a contact structure containing a gouged upper surface embedded in at least a middle-of-the-line (MOL) dielectric material and contacting a doped semiconductor material structure, wherein a first interconnect dielectric material containing a first contact opening is present above said contact structure and said MOL dielectric material, and wherein said first contact opening exposes said gouged upper surface of said contact structure;

forming a first metallization structure in said first contact opening;

forming at least a second interconnect dielectric material containing a second contact opening above said first interconnect dielectric material, wherein said second contact opening exposes said first metallization structure;

forming a gouging feature in an upper surface of said first metallization structure; and

forming a second metallization structure in said second contact opening.

2. The method of claim 1 , wherein each of said contact structure, said first metallization structure, and said second metallization structure comprises a metal or metal alloy having a resistivity of 10 microOhm-cm or less.

3. The method of claim 2 , wherein said metal or metal alloy having said resistivity of 10 microOhm-cm or less is selected from the group consisting of cobalt (Co), ruthenium (Ru), molybdenum (Mo), osmium (Os), iridium (Jr) and rhodium (Rh).

4. The method of claim 1 , wherein said gouged upper surface of said contact structure is formed by argon plasma sputtering, reactive ion etching or a wet etch.

5. The method of claim 1 , wherein said forming said gouging feature comprising argon plasma sputtering, reactive ion etching or a wet etch.

6. The method of claim 1 , wherein said doped semiconductor material structure comprises a plurality of diamond shaped doped semiconductor material subunits that are merged.

7. The method of claim 1 , wherein said doped semiconductor material structure is present on a portion of at least one semiconductor fin.

8. The method of claim 1 , wherein said forming said first metallization structure comprises:

depositing a continuous layer of a diffusion barrier material;

forming a metal or metal alloy having a resistivity of 10 microOhm-cm or less on said continuous layer of diffusion barrier material; and

removing said metal or metal alloy having said resistivity of 10 microOhm-cm or less and said continuous diffusion barrier material that is present outside the first contact opening.

9. The method of claim 1 , wherein said forming said second metallization structure comprises:

depositing a continuous layer of a diffusion barrier material;

forming a metal or metal alloy having a resistivity of 10 microOhm-cm or less on said continuous layer of diffusion barrier material; and

removing said metal or metal alloy having said resistivity of 10 microOhm-cm or less and said continuous diffusion barrier material that is present outside the second contact opening.

10. The method of claim 1 , wherein said first metallization structure has a rounded bottommost surface that extends beneath a topmost surface of said contact structure, and wherein said second metallization structure has a rounded bottommost surface that extends beneath a topmost surface of said first metallization structure.

11. The method of claim 1 , wherein said contact structure comprises a metal semiconductor alloy in direct physical contact with a surface of said doped semiconductor structure, a diffusion barrier liner located on said metal semiconductor alloy and contacting portions of said at least one MOL dielectric material, and a metal or metal alloy having a resistivity of 10 microOhm-cm or less located on said diffusion barrier liner, wherein said diffusion barrier liner has a topmost surface that is coplanar with a topmost surface of said metal or metal alloy having said resistivity of 10 microOhm-cm or less.

12. The method of claim 1 , wherein said contact structure comprises a diffusion barrier liner located on a surface of said doped semiconductor structure and contacting portions of said at least one MOL dielectric material, and a metal or metal alloy having a resistivity of 10 microOhm-cm or less located on said diffusion barrier liner, wherein said diffusion barrier liner has a topmost surface that is coplanar with a topmost surface of said metal or metal alloy having said resistivity of 10 microOhm-cm or less.

13. The method of claim 1 , wherein gouged upper surface of said contact structure has a concave shape, and wherein said gouged feature has a concave shape.

14. The method of claim 1 , wherein a dielectric capping layer is located between the at least one MOL dielectric material and said first interconnect dielectric material, and wherein an upper portion of said contact structure is embedded in the dielectric capping layer.

15. The method of claim 1 , wherein said first metallization structure comprises a diffusion barrier liner and a metal or metal alloy having a resistivity of 10 microOhm-cm or less.

16. The method of claim 15 , wherein the diffusion barrier liner has a topmost surface that is coplanar with a topmost surface of said metal or metal alloy having said resistivity of 10 microOhm-cm or less and with a topmost surface of said first interconnect dielectric material.

17. The method of claim 1 , wherein said second metallization structure comprises a diffusion barrier liner and a metal or metal alloy having a resistivity of 10 microOhm-cm or less.

18. The method of claim 17 , wherein the diffusion barrier liner has a topmost surface that is coplanar with a topmost surface of said metal or metal alloy having said resistivity of 10 microOhm-cm or less and with a topmost surface of said first interconnect dielectric material.

19. The method of claim 1 , further comprising forming a dielectric capping layer on first interconnect dielectric material and said first metallization structure prior to forming the second interconnect dielectric material.