Uniform fin dimensions using fin cut hardmask
A semiconductor device includes a substrate, a fin region including fins formed from the substrate, at least one fin cut region formed in the substrate adjacent to the fin region and having a different depth in the substrate than the fin region, and shallow trench isolation regions having substantially a same height in the fin cut regions and the fin region.
1. A semiconductor device, comprising:
a substrate;
a fin region including at least one trench and a plurality of fins having a uniform width formed from the substrate;
the fin region being disposed between a first finless fin cut region and a second finless fin cut region formed in the substrate, the first and second finless fin cut regions each having a top surface of the substrate located above a depth of the at least one trench of the fin region; and
shallow trench isolation (STI) regions in the first and second finless fin cut regions and in the at least one trench of the fin region, the STI regions each having substantially a same height relative to the top surfaces of at least one of the first and second fin cut regions.
2. The device as recited in claim 1 , further comprising a fin liner formed between the plurality of fins in the fin region.
3. The device as recited in claim 2 , wherein each of the STI regions in the first and second finless fin cut regions includes a first dielectric fill formed on the substrate, and the at least one STI region in the at least one trench of the fin cut region includes a second dielectric fill formed on the fin liner.
4. The device as recited in claim 3 , wherein the first dielectric fill, the fin liner and the second dielectric fill are of the same height relative the top surfaces of at least one of the first and second fin cut regions.
5. The device as recited in claim 1 , further comprising a fin liner formed between the substrate and the at least one STI region in the at least one trench of the fin region.
6. The device as recited in claim 1 , wherein the plurality of fins have a uniform height.
7. The device as recited in claim 1 , wherein each of the plurality of fins extends from a surface defined by the at least one trench of the fin region.
8. A semiconductor device, comprising:
a substrate;
a fin region including trenches and a plurality of fins having a uniform width formed from the substrate;
the fin region being disposed between a first finless fin cut region and a second finless fin cut region formed in the substrate, the first and second finless fin cut regions each having a surface of the substrate located above surfaces defined by the trenches of the fin region; and
shallow trench isolation (STI) regions in the first and second finless fin cut regions and in the trenches of the fin region.
9. The device as recited in claim 8 , further comprising a fin liner formed between the plurality of fins in the fin region.
10. The device as recited in claim 9 , wherein each of the STI regions in the first and second finless fin cut regions includes a first dielectric fill formed on the substrate, and each of the STI regions in the trenches of the fin cut region includes a second dielectric fill formed on the fin liner.
11. The device as recited in claim 10 , wherein the first dielectric fill, the fin liner and the second dielectric fill have the same height relative to the surfaces of the first and second finless fin cut regions.
12. The device as recited in claim 8 , further comprising a fin liner formed between the substrate and the STI regions in the trenches of the fin region.
13. The device as recited in claim 8 , wherein the plurality of fins have a uniform height.
14. The device as recited in claim 8 , wherein the plurality of fins extend from surfaces defined by the trenches of the fin region.
15. A semiconductor device, comprising:
a substrate;
a fin region including trenches and a plurality of fins having a uniform width formed from the substrate;
the fin region being disposed between a first finless fin cut region and a second finless fin cut region formed in the substrate, the first and second finless fin cut regions each having a top surface located above a depth of the trenches in the fin region, and the plurality of fins each having a base located below the top surfaces of the first and second finless fin cut regions;
a fin liner disposed along the substrate in the first and second finless fin cut regions and along sidewalls of the plurality of fins in the fin region to a height below a top surface of the plurality of fins; and
shallow trench isolation (STI) regions disposed on the liner and in the first and second finless fin cut regions and the trenches the fin region to the height below the top surface of the plurality of fins.
16. The device as recited in claim 15 , wherein each of the STI regions in the first and second finless fin cut regions includes a first dielectric fill formed on the top surface of the substrate, and each of the STI regions in the trenches of the fin region includes a second dielectric fill formed on the fin liner.