IP Library Granted Patent US 9,653,307
Granted Patent B1
US 9,653,307 · App. 15/210,249 · Granted May 16, 2017

Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures

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Quick Facts
Patent No.
US 9,653,307
App. No.
15/210,249
Granted
May 16, 2017
Kind
B1
Abstract

A surface modification composition comprising a silylation agent comprising a silyl acetamide, a silylation catalyst comprising a perfluoro acid anhydride, an amine-based complexing agent, and an organic solvent. Methods of modifying a silicon-based material and methods of forming high aspect ratio structures on a substrate are also disclosed.

Claims (32)

1. A surface modification composition comprising:

a silylation agent comprising a silyl acetamide;

a silylation catalyst comprising a perfluoro acid anhydride;

an amine-based complexing agent; and

an organic solvent.

2. The surface modification composition of claim 1 , wherein the silylation agent comprises an N,O-bis(trialkylsilyl)acetamide, an N,O-bis(trialkylsilyl)haloacetamide, or combinations thereof.

3. The surface modification composition of claim 1 , wherein the silylation agent comprises N,O-bis(trimethylsilyl)acetamide (BSA), N,O-bis(triethylsilyl)acetamide, N,O-bis(tripropylsilyl)acetamide, N,O-bis(trimethylsilyl)trifluoroacetamide (BSTFA), or combinations thereof.

4. The surface modification composition of claim 1 , wherein the silylation catalyst comprises trifluoroacetic anhydride (TFAA), pentafluoropropionic anhydride (PFPA), heptafluorobutyric anhydride (HFBA), or combinations thereof.

5. The surface modification composition of claim 1 , wherein the amine-based complexing agent comprises ethylenediamine (EDA), diethylenetriamine, trimethylenediamine (TMEDA), triethylenetetramine, pentaethylenehexamine, N,N-dimethyltrimethylenediamine, tetraethylenepentamine (TEPA), N,N-diisopropylethylamine, triethylamine (TEA), imidazole, 4-dimethylaminopyridine (DMAP), 3-amino-2,6-dimethylpyridine, or combinations thereof.

6. The surface modification composition of claim 1 , wherein the organic solvent comprises an ester solvent, an ether solvent, an acetate solvent, or an amide solvent.

7. The surface modification composition of claim 1 , wherein the organic solvent comprises propylene glycol monomethyl ether acetate (PGMEA), tetrahydrofurfuryl acetate (THFAC), dimethylacetamide (DMA), propylene carbonate (PC), or combinations thereof.

8. The surface modification composition of claim 1 , wherein the silylation agent comprises from about 1 wt % to about 20 wt % of the surface modification composition, the silylation catalyst comprises from about 0.05 wt % to about 5 wt % of the surface modification composition, the amine-based complexing agent comprises from about 0.05 wt % to about 5 wt % of the surface modification composition, and the organic solvent comprises the remainder of the surface modification composition.

9. The surface modification composition of claim 1 , further comprising a chelating agent comprising a α-hydroxyl dicarboxylic acid or a α-hydroxyl polycarboxylic acid.

10. The surface modification composition of claim 9 , wherein the chelating agent comprises citric acid, lactic acid, malic acid, glycolic acid, tartaric acid, mandelic acid, (R)-(−)-citramalic acid, gluconic acid, gallic acid, or combinations thereof.

11. The surface modification composition of claim 1 , wherein the surface modification composition comprises N,O-bis(trimethylsilyl)acetamide (BSA), trifluoroacetic anhydride (TFAA), ethylenediamine (EDA), and propylene glycol monomethyl ether acetate (PGMEA).

12. The surface modification composition of claim 11 , further comprising citric acid.

13. The surface modification composition of claim 11 , further comprising tartaric acid.

14. The surface modification composition of claim 1 , wherein the surface modification composition comprises N,O-bis(trimethylsilyl)acetamide (BSTFA), trifluoroacetic anhydride (TFAA), ethylenediamine (EDA), and propylene glycol monomethyl ether acetate (PGMEA).

15. A method of modifying a silicon-based material, comprising:

exposing a silicon-based material to a composition comprising a silylation agent comprising a silyl acetamide, a silylation catalyst comprising a perfluoro acid anhydride, an amine-based complexing agent, and an organic solvent.

16. The method of claim 15 , wherein exposing a silicon-based material to a composition comprises forming features from the silicon-based material, the features comprising an aspect ratio of greater than about 10:1.

17. The method of claim 15 , wherein exposing a silicon-based material to a composition comprises forming features from the silicon-based material, the features comprising an aspect ratio of greater than about than 22:1.

18. The method of claim 15 , wherein exposing a silicon-based material to a composition comprises reacting the silylation agent with the silicon-based material.

19. A method of forming high aspect ratio structures on a substrate, comprising:

removing portions of a silicon-based material on a substrate to form silicon-based features having an aspect ratio of greater than about 20:1; and

exposing the silicon-based features to a silicon modification composition comprising a silylation agent comprising a silyl acetamide, a silylation catalyst comprising a perfluoro acid anhydride, an amine-based complexing agent, and an organic solvent.

20. The method of claim 19 , wherein exposing the silicon-based features to a silicon modification composition further comprises including an α-hydroxyl dicarboxylic acid or an α-hydroxyl polycarboxylic acid in the silicon modification composition.

21. The method of claim 19 , further comprising exposing the silicon-based features to dilute hydrogen fluoride, ammonium hydroxide, or an ammonium peroxide mixture before exposing the silicon-based features to the silicon modification composition.

22. The method of claim 19 , further comprising rinsing the silicon-based features with water before exposing the silicon-based features to the silicon modification composition.

23. The method of claim 19 , further comprising rinsing the silicon-based features with isopropanol before exposing the silicon-based features to the silicon modification composition.

24. The method of claim 19 , further comprising drying the substrate after exposing the silicon-based features to the silicon modification composition.

25. The method of claim 19 , further comprising exposing the silicon-based features to an α-hydroxyl dicarboxylic acid or an α-hydroxyl polycarboxylic acid before exposing the silicon-based features to the silicon modification composition.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050676/0782 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046635/0634 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 1 TO PATENT SECURITY AGREEMENT Recorded Aug 26, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 039841/0207 →
SUPPLEMENT NO. 1 TO PATENT SECURITY AGREEMENT Recorded Aug 25, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 039824/0681 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2016
From: IMONIGIE, JEROME A.; LABORIANTE, IAN C.; ANDREAS, MICHAEL T.; SAPRA, SANJEEV; RAGHU, PRASHANT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 039160/0169 →