Methods of fabricating storage elements and structures having edgeless features for programmable layer(s)

1. A method, comprising:

forming a bottom structure with a top surface and a side surface that form at least one edge;

forming an opening with sloped sides through at least one insulating layer to expose at least a portion of the top surface of the bottom structure; wherein

forming the opening includes depositing an insulating layer over the bottom structure, and forming an opening through the insulating layer having sloped sides, the opening being offset from the at least one edge;

forming a programmable layer over the at least one edge, in contact with the sloped sides of the opening and the top surface of the bottom structure; and

forming a top layer over the programmable layer and opening; wherein

the programmable layer is programmable between at least two different impedance states.

2. The method of claim 1 , wherein:

depositing the insulating layer over the bottom structure includes depositing the insulating layer in contact with the top surface and side surface of the bottom structure.

3. The method of claim 1 , wherein:

forming the bottom structure includes

forming a structure opening in a bottom structure insulating layer,

forming a bottom structure material in the structure opening and on a top surface of the bottom structure insulating layer, and

planarizing to remove the bottom structure material from the top surface of the bottom structure insulating layer to form the top surface of the bottom structure and expose a portion of the side surface of the bottom structure that extends above the top surface of the bottom structure insulating layer.

4. The method of claim 1 , wherein:

forming the bottom structure includes forming an initial bottom structure in an insulating layer, the bottom structure having side surfaces that slope inward; and

forming the opening includes removing a top portion of the initial bottom structure to form the opening and the bottom structure, the sides of the opening following the sloped sides of the initial bottom structure.

5. The method of claim 1 , further including:

the programmable layer comprises a solid electrolyte; and

forming an ion source for at least one element that is ion conductible within the solid electrolyte; wherein

the ion source is selected from the group of: the top layer and the bottom structure.

6. The method of claim 1 , further including:

forming a conductive lower structure having a first width in a first direction parallel to the top surface of the bottom structure; and

forming the bottom structure on, and in contact with, the conductive lower structure, the bottom structure having a second width in the first direction that is greater than the first width.

7. A method, comprising:

forming a bottom structure having at least one edge formed at the intersection of a top surface and side surface; wherein

forming the bottom structure includes forming a structure opening in a bottom structure insulating layer,

forming a bottom structure material in the structure opening and on a to surface of the bottom structure insulating layer, and

planarizing to remove the bottom structure material from the top surface of the bottom structure insulating layer to form the top surface of the bottom structure and expose a portion of the side surface of the bottom structure that extends above the top surface of the bottom structure insulating layer;

forming a programmable layer over the at least one edge and in contact with at least the top surface of the bottom structure;

forming a cover layer over the programmable layer;

forming an opening through the cover layer, offset from the at least one edge, that exposes the programmable layer; and

forming a top layer in contact with the programmable layer.

8. The method of claim 7 , wherein:

the programmable layer contacts the top surface of the bottom structure at the at least one edge.

9. The method of claim 7 , wherein:

the cover layer is an insulating layer.

10. The method of claim 7 , wherein:

the cover layer is an etch stop layer; and

forming the opening includes

forming an insulating layer over the etch stop layer,

forming an initial opening through the insulating layer with a first etch that is highly selective with respect to the etch stop layer, and

continuing the opening through the etch stop layer with a second etch different from the first etch to expose the programmable layer.

11. The method of claim 7 , further including:

forming a conductive lower structure having a first width in a first direction parallel to the top surface of the bottom structure; and

forming the bottom structure on, and in contact with, the conductive lower structure, the bottom structure having a second width in the first direction that is greater than the first width.

12. The method of claim 7 , further including:

the programmable layer comprises a solid electrolyte; and

forming an ion source for at least one element that is ion conductible within the solid electrolyte; wherein

the ion source is selected from the group of: the top layer and the bottom structure.

13. A method, comprising:

forming a bottom structure with a top surface and a side surface that form at least one edge that extends above a bottom structure insulating layer; wherein

forming the bottom structure includes forming a structure opening in a bottom structure insulating layer,

forming a bottom structure material in the structure opening and on a to surface of the bottom structure insulating layer, and

planarizing to remove the bottom structure material from the to surface of the bottom structure insulating layer to form the to surface of the bottom structure and expose a portion of the side surface of the bottom structure that extends above the top surface of the bottom structure insulating layer;

forming at least one second insulating layer in contact with the at least one edge;

forming an opening through at least the second insulating layer to expose at least a portion of the top surface of the bottom structure;

forming a programmable layer over the at least one edge, in contact with sides of the opening and in contact with the top surface of the bottom structure; and

forming a top layer over the programmable layer and opening; wherein

the programmable layer is programmable between at least two different impedance states.

14. The method of claim 13 , wherein:

forming the opening offset from the at least one edge so that the at least one edge remains covered with at least the second insulating layer.

15. The method of claim 13 , wherein:

forming the opening includes removing at least a portion of the bottom structure.

16. The method of claim 13 , further including:

forming a conductive lower structure having a first width in a first direction parallel to the top surface of the bottom structure; and

forming the bottom structure on, and in contact with, the conductive lower structure, the bottom structure having a second width in the first direction that is greater than the first width.

17. The method of claim 13 , further including:

the programmable layer comprises a solid electrolyte; and

forming an ion source for at least one element that is ion conductible within the solid electrolyte; wherein

the ion source is selected from the group of: the top layer and the bottom structure.