PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film

1. A sol-gel solution for forming a PBNZT ferroelectric film on a substrate, wherein said sol-gel solution comprises a raw material solution comprising a hydrolysis polycondensation reaction product of an alkoxide raw material, and has a contact angle of 1 to not more than 40° with respect to the substrate,

wherein the alkoxide raw material comprises Pb, Bi, Nb, Zr and Ti.

2. The sol-gel solution according to claim 1 , wherein said contact angle with respect to the substrate is 1 to not more than 20°.

3. The sol-gel solution according to claim 1 , wherein said sol-gel solution includes a polycarboxylic acid or a polycarboxylic acid ester in the solvent.

4. The sol-gel solution according to claim 3 , wherein said polycarboxylic acid ester includes heteropolyacid ions.

5. The sol-gel solution according to claim 4 , wherein said heteropolyacid ion has a Keggin type structure of the Formula:

[XM y M′ 12−y O 40 ] n− ,

where X is a hetero atom, M is a polyatom, M′ is a polyatom different from M, n is a valence number, and y=1 to 11.

6. The sol-gel solution according to claim 4 , wherein said heteropolyacid ion has a Keggin type structure of the Formula:

[XM 11 O 39 ] n− ,

where X is a hetero atom, M is a polyatom, and n is a valence number.

7. The sol-gel solution according to claim 4 , wherein said heteropolyacid ion has a Keggin type structure of the Formula:

[XM z M′ 11−z O 39 ] n− ,

where X is a hetero atom, M is a polyatom, M′ is a polyatom different from M, n is a valence number, and z=1 to 10.

8. The sol-gel solution according to claim 4 , wherein the sol-gel solution includes, among said heteropolyacid ions, heteropolyacid ions in which the hetero atom includes the group consisting of B, Si, P, S, Ge, As, Mn, Fe and Co, and the polyatom includes the group consisting of Mo, V, W, Ti, Al, Nb and Ta, as a part of a precursor structure of a ferroelectric ceramics.

9. The sol-gel solution according to claim 1 , wherein the sol-gel solution includes at least one of a high viscosity polyhydric alcohol, glycol ethers, a lower alcohol or a basic alcohol in the solvent.

10. The sol-gel solution according to claim 1 , wherein:

said PBNZT ferroelectric film includes a perovskite-structured ferroelectric substance of the Formula:

(Pb 1−X Bi X )((TiZr) 1−Y Nb Y )O 3 ,

wherein X is 1 to 10 mol %;

Y is 1 to 10 mol %; and

the surplus lead addition amount included in said raw material solution is 15 mol % or more.

11. The sol-gel solution according to claim 1 , wherein said sol-gel solution includes polar solvents.

12. The sol-gel solution according to claim 11 , wherein said polar solvent is any one of methyl ethyl ketone, 1,4-dioxane, 1,2-dimethoxyethane acetamide, N-methyl-2-pyrrolidone, acetonitrile, dichloromethane, nitromethane, trichloromethane, dimethylformamide, monomethylformamide, or combinations thereof.

13. The sol-gel solution according to claim 2 , wherein said sol-gel solution includes an unsaturated fatty acid, wherein:

said unsaturated fatty acid is any one of monounsaturated fatty acid, diunsaturated fatty acid, triunsaturated fatty acid, tetraunsaturated fatty acid, pentaunsaturated fatty acid, hexaunsaturated fatty acid, or combinations thereof;

said monounsaturated fatty acid is any one of crotonic acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, eicosenoic acid, erucic acid, nervonic acid, or combinations thereof;

said diunsaturated fatty acid is any one of linoleic acid, eicosadienoic acid, docosadienoic acid, or combinations thereof;

said triunsaturated fatty acid is any one of linolenic acid, pinolenic acid, eleostearic acid, mead acid, dihomo-γ-linolenic acid, eicosatrienoic acid, or combinations thereof;

said tetraunsaturated fatty acid is any one of stearidonic acid, arachidonic acid, eicosatetraenoic acid, adrenic acid, or combinations thereof;

said pentaunsaturated fatty acid is any one of bosseopentaenoic acid, eicosapentaenoic acid, osbond acid, clupanodonic acid, tetracosapentaenoic acid, or combinations thereof; and

said hexaunsaturated fatty acid is any one of docosahexaenoic acid, nisinic acid, or combinations thereof.

14. A method for producing a ferroelectric film, wherein the sol-gel solution according to claim 1 is used for production of a PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured

ferroelectric substance represented by ABO 3 , wherein:

said perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb 2+ as A-site ions and containing Zr 4+ and Ti 4+ as B-site ions;

the A-site contains Bi 3+ as A-site compensation ions;

the B-site contains Nb 5+ as B-site compensation ions;

the content of said A-site compensation ions is 5 to 10 mol % relative to the stoichiometric composition of said perovskite-structured ferroelectric substance; and

the content of said B-site compensation ions is 5 to 10 mol % relative to the stoichiometric composition of said perovskite-structured ferroelectric substance.

15. A method for producing a ferroelectric film, wherein the sol-gel solution according to claim 1 is used for production of a ferroelectric film having a relative permittivity of 400 or more.

16. A film forming method, comprising the steps of:

coating the sol-gel solution according to claim 1 on a substrate to form a coated film on said substrate;

temporarily burning said coated film; and

repeating the formation of said coated film and said temporary burning a plurality of times to form a ferroelectric material film including a plurality of coated films on said substrate.

17. The film forming method according to claim 16 , wherein:

said ferroelectric material film has a thickness of more than 300 nm; and

said ferroelectric material film is subjected to a heat treatment to crystallize collectively said ferroelectric material film.

18. A method for producing a ferroelectric film comprising the steps of:

forming a ferroelectric material film on a substrate by using the film forming method according to claim 16 ; and

heat-treating said ferroelectric material film to form a ferroelectric film including a perovskite-structured ferroelectric substance obtained by crystallizing said ferroelectric material film, wherein

said ferroelectric film is a PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by ABO 3 , wherein:

said perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb 2+ as A-site ions and containing Zr 4+ and Ti 4+ as B-site ions;

the A-site contains Bi 3+ as A-site compensation ions;

the B-site contains Nb 5+ as B-site compensation ions;

the content of said A-site compensation ions is 5 to 10 mol % relative to the stoichiometric composition of said perovskite-structured ferroelectric substance; and

the content of said B-site compensation ions is 5 to 10 mol % relative to the stoichiometric composition of said perovskite-structured ferroelectric substance.

19. A method for producing a ferroelectric film comprising the steps of:

forming a ferroelectric material film on a substrate, by using the film forming method according to claim 16 ; and

heat-treating said ferroelectric material film to form, on the substrate, a ferroelectric film having a relative permittivity of 400 or more obtained by crystallizing said ferroelectric material film.

20. The method for producing a ferroelectric film according to claim 17 , wherein, when a ferroelectric material film is formed on said substrate, the formation of said coated film and said temporary burning are repeated a plurality of times to form a ferroelectric material film including the plurality of coated films on said substrate.

21. The method for producing a ferroelectric film according to claim 18 , wherein the surface of said substrate has a (111)-oriented Pt or Ir film.