Reduced voltage nonvolatile flash memory

1. A system comprising:

a first semiconductor die comprising a charge pump configured to receive a first voltage from an external power source and adapted to generate power supply signals;

a second semiconductor die comprising a memory array and programming circuitry and configured to receive the first voltage from the external power source and to receive a power supply signal from the charge pump having a second voltage higher than the first voltage;

a voltage regulator configured to receive a power supply signal from the charge pump having the second voltage and adapted to generate a third voltage lower than the second voltage; and

a bus connected to the first and second semiconductor dies and the voltage regulator to carry the power supply signals to the programming circuitry;

wherein the programming circuitry is adapted to program memory cells of the memory array to respective threshold voltages that are each less than or equal to the first voltage;

wherein the programming circuitry is further adapted to program a selected memory cell of the memory array while applying gate voltages less than or equal to the first voltage to wordlines of each unselected memory cell of the memory array connected in series with the selected memory cell; and

wherein the programming circuitry is further adapted to program the selected memory cell of the memory array while applying no voltage greater than the first voltage to an unselected memory cell of the memory array connected in series with the selected memory cell.

2. The system of claim 1 , wherein the second semiconductor die further comprises the voltage regulator.

3. The system of claim 1 , wherein the second semiconductor die is devoid of a charge pump.

4. The system of claim 3 , wherein the voltage regulator is external to the second semiconductor die.

5. The system of claim 4 , wherein the first voltage is a lowest positive voltage received by the second semiconductor die.

6. The system of claim 1 , wherein the memory cells of the memory array are arranged as n-transistor flash memory strings, where n is an integer value less than 12.

7. The system of claim 6 , wherein each n-transistor flash memory string of the memory array contains a number of non-volatile memory cells less than or equal to 10.

8. The system of claim 6 , wherein each n-transistor flash memory string of the memory array contains a number of memory cells less than or equal to 5.

9. The system of claim 1 , further comprising:

wherein the memory array comprises a plurality of memory cells arranged in a plurality of strings of memory cells with each string of memory cells of the plurality of strings of memory cells containing memory cells connected in series between a respective bitline and a sense amplifier;

wherein the third voltage is lower than the second voltage and higher than the first voltage; and

wherein the programming circuitry is further adapted to program the selected memory cell of the memory array while applying gate voltages less than or equal to the first voltage to wordlines of each unselected memory cell of the memory array connected in series with the selected memory cell.

10. The system of claim 9 , wherein each string of memory cells of the plurality of strings of memory cells contains less than 10 memory cells connected in series.

11. The system of claim 9 , wherein the programming circuitry is further adapted to program the memory cells of the plurality of memory cells using channel hot-electron injection.

12. A system comprising:

a first semiconductor die comprising a charge pump configured to receive a first voltage from an external power source and to generate power supply signals;

a second semiconductor die comprising a memory array and programming circuitry;

a bus connected to the first and second semiconductor dies to carry the power supply signals to the programming circuitry; and

a microcontroller to read information from a selected memory cell of the memory array by applying a gate voltage less than the first voltage to wordlines of one or more unselected memory cells of the memory array connected in series with the selected memory cell, wherein the microcontroller is adapted to program two or more bits of information in individual memory cells of the memory array;

wherein the programming circuitry is adapted to program memory cells of the memory array to respective threshold voltages that are each less than or equal to the first voltage;

wherein the programming circuitry is further adapted to program a selected memory cell of the memory array while applying gate voltages less than or equal to the first voltage to wordlines of each unselected memory cell of the memory array connected in series with the selected memory cell; and

wherein the memory cells of the memory array each comprise a respective floating gate between a respective control gate and a respective channel region of that memory cell, and wherein the programming circuitry is further adapted to program the selected memory cell of the memory array while applying no voltage greater than the first voltage across the respective floating gate of an unselected memory cell of the memory array connected in series with the selected memory cell.