Method of forming a semiconductor package

1. A semiconductor package, comprising:

an interconnecting structure;

a semiconductor die arranged over the interconnecting structure;

one or more contacts arranged between the interconnecting structure and a lower portion of the semiconductor die and electrically coupling the interconnecting structure to the semiconductor die;

a bonding structure including a plurality of solder balls or solder bumps spaced laterally apart from sidewalls of the semiconductor die, the bonding structure being electrically coupled to the interconnecting structure;

a package structure disposed over the semiconductor die and over the bonding structure, the package structure including: a substrate disposed over the semiconductor die, a first die disposed over the substrate, and a second die disposed over the first die;

an interconnect extending through the substrate of the package structure and coupling the first die and the second die to the bonding structure;

a molding layer covering the package structure and the semiconductor die, and encapsulating the solder balls or solder bumps of the bonding structure to cover a sidewall of the solder balls or solder bumps.

2. The semiconductor package of claim 1 , wherein a contact of the one or more contacts has a first width, and a connector of the plurality of connectors has a second width, the second width being greater than the first width.

3. The semiconductor package of claim 1 , wherein the molding layer contacts a top surface of the semiconductor die and a bottom surface of the package structure.

4. The semiconductor package of claim 1 , wherein an overall height of the semiconductor package ranges from about 350 microns to about 1050 microns.

5. The semiconductor package of claim 1 , wherein the package structure further comprises:

one or more package contacts on an upper surface of the substrate and being electrically coupled to an uppermost portion of the interconnect extending through the substrate; and

one or more wires electrically coupling the one or more package contacts to the first die and the second die.

6. The semiconductor package of claim 1 , wherein the interconnecting structure has a thickness equal to or less than about 30 microns.

7. The semiconductor package of claim 1 , wherein the molding layer is a seamless molding layer covering the package structure and the semiconductor die and encapsulating the solder balls or solder bumps of the bonding structure to cover the sidewall of the solder balls or solder bumps.

8. A semiconductor package, comprising:

a substrate;

a package structure disposed about a first face of the substrate, the package structure including: a first die, and a second die stacked over the first die;

a bonding structure disposed about a second face of the substrate, the second face being opposite the first face;

an interconnect extending through the substrate and coupling the package structure to the bonding structure;

an interconnecting structure disposed over the second face of the substrate, wherein the bonding structure is arranged between the interconnecting structure and the substrate and electrically couples the interconnecting structure and the interconnect;

a semiconductor die arranged between the second face of the substrate and the interconnecting structure;

contacts arranged between the an uppermost dielectric layer of interconnecting structure and a lower surface of the semiconductor die and electrically coupling the interconnecting structure and the semiconductor die; and

a molding layer covering the package structure and contacting the semiconductor die, wherein the molding layer or an underfill material extends beneath the lower surface of the semiconductor die and covers the uppermost dielectric layer of the interconnecting structure to contact sidewalls of the contacts.

9. The semiconductor package of claim 8 , wherein a contact of the one or more contacts has a first width, and wherein the bonding structure includes a connector having a second width, the second width differing from the first width.

10. The semiconductor package of claim 8 , wherein an overall height of the semiconductor package ranges from about 350 microns to about 1050 microns.

11. The semiconductor package of claim 8 , wherein the molding layer contacts a top surface of the semiconductor die and a bottom surface of the package structure.

12. The semiconductor package of claim 8 , wherein the package structure further comprises:

one or more package contacts on an upper surface of the substrate and being electrically coupled to an uppermost portion of the interconnect extending through the substrate; and

one or more wires electrically coupling the one or more package contacts to the first die and the second die.

13. The semiconductor package of claim 8 , wherein the molding layer extends beneath the lower surface of the semiconductor die and covers the uppermost dielectric layer of the interconnecting structure to contact sidewalls of the contacts.

14. The semiconductor package of claim 8 , wherein the molding layer is a seamless molding layer covering the package structure and the semiconductor die and encapsulating the solder balls or solder bumps of the bonding structure to cover the sidewall of the solder balls or solder bumps.

15. A semiconductor package, comprising:

an interconnecting structure;

two or more semiconductor die arranged over an upper surface of the interconnecting structure, the two or more semiconductor die spaced laterally apart from one another;

contacts arranged between the upper surface of the interconnecting structure and lower surfaces of the two or more semiconductor die, the contacts electrically coupling the interconnecting structure to the two or more semiconductor die;

a bonding structure including a plurality of connectors that at least partially laterally surround the two or more semiconductor die, the bonding structure being electrically coupled to the interconnecting structure;

a package structure disposed over the semiconductor die and over the bonding structure, the package structure including: a substrate disposed over the semiconductor die, a first die disposed over the substrate, and a second die disposed over the first die;

an interconnect extending through the substrate of the package structure and coupling the first die and the second die to the bonding structure; and

a seamless molding layer covering an upper surface and sidewalls of the package structure and the two or more semiconductor die, and encapsulating the plurality of connectors to cover a sidewall of a connector.

16. The semiconductor package of claim 15 , wherein the contacts comprise solder balls, solder bumps, or copper pillars.

17. The semiconductor package of claim 15 , wherein the interconnecting structure has a thickness equal to or less than about 30 microns.

18. The semiconductor package of claim 15 , wherein an overall height of the semiconductor package ranges from about 350 microns to about 1050 microns.

19. The semiconductor package of claim 15 , wherein a contact of the one or more contacts has a first width, and a connector of the plurality of connectors has a second width, the second width being greater than the first width.

20. The semiconductor package of claim 15 , wherein the molding layer contacts a top surface of the semiconductor die and a bottom surface of the package structure.