Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of alpha amino acids and bisepoxides

1. A method comprising:

a) providing a substrate comprising a layer of photoresist, wherein the layer of photoresist comprises a plurality of apertures;

b) providing a copper electroplating bath comprising one or more reaction products of one or more α-amino acids and one or more bisepoxides; an electrolyte; one or more accelerators; and one or more suppressors;

c) immersing the substrate comprising the layer of photoresist with the plurality of apertures in the copper electroplating bath; and

d) electroplating a plurality of copper photoresist defined features in the plurality of apertures, the plurality of photoresist defined features comprise an average % TIR of -5% to -1%.

2. The method of claim 1 , wherein an average % WID of an array of copper photoresist defined features on the substrate is 12% to 15%.

3. The method of claim 1 , wherein the one or more α-amino acids are chosen from arginine and lysine.

4. The method of claim 1 , wherein the one or more bisepoxides have a formula:

wherein R 1 and R 2 are independently chosen from hydrogen and (C 1 -C 4 )alkyl, A=O((CR 3 R 4 ) m O) n or (CH 2 ) y , each R 3 and R 4 is independently chosen from hydrogen, methyl, or hydroxyl, m=1-6, n=1-20 and y=0-6 and when y=0, A is a chemical bond.

5. The method of claim 4 , wherein the bisepoxides have a formula:

wherein R 1 and R 2 are independently chosen from hydrogen and (C 1 -C 4 )alkyl, R 3 and R 4 are chosen from hydrogen, methyl or hydroxyl, m=1-6, n=1.

6. The method of claim 1 , wherein the one or more reaction products are in amounts of 0.25 ppm to 20 ppm in the copper electroplating bath.

7. The method of claim 1 , wherein electroplating is done at a current density of 0.25 ASD to 40 ASD.

8. The method of claim 1 , wherein the one or more copper photoresist defined features are pillars, bond pads or line space features.