Textured memory cell structures
The present disclosure includes textured memory cell structures and method of forming the same. In one or more embodiments, a memory cell includes a buffer portion formed on an amorphous portion and an active portion formed on the buffer portion, wherein the active portion is textured with a single out of plane orientation.
1. A memory cell, comprising:
a select device;
an amorphous material deposited on the select device, wherein the amorphous material is carbon;
a buffer formed entirely on the amorphous material, wherein a first surface of the buffer is in contact only with the amorphous material and wherein the buffer is antimony telluride (Sb 2 Te 3 ) and wherein the buffer is textured with a single out of plane orientation; and
a number of active materials formed on the buffer, wherein the number of active materials form a chalcogenide super lattice textured with a single out of plane orientation and wherein the number of active materials are configured to be programmed to a set state corresponding to a low resistance state and to a reset state corresponding to a high resistance state.
2. The memory element of claim 1 , wherein the number of active materials include a mono crystal chalcogenide.
3. The memory element of claim 1 , wherein the number of active materials include a crystalline multi-material chalcogenide.
4. The memory element of claim 3 , wherein the crystalline multi-material chalcogenide includes a number of portions of germanium telluride (GeTe) alternating between a number of portions of antimony telluride (Sb 2 Te 3 ).
5. The memory element of claim 4 , wherein the memory cell is a phase change random access memory (PCRAM) cell.
6. A memory cell, comprising:
a select device;
an amorphous material deposited on the select device, wherein the amorphous material is carbon;
a first chalcogenide formed entirely on the amorphous material, wherein a first surface of the first chalcogenide is in contact only with the amorphous material and wherein the first chalcogenide is antimony telluride (Sb 2 Te 3 ) and has a single out of plane orientation; and
a second chalcogenide formed on the first chalcogenide, wherein the first chalcogenide and the second chalcogenide are formed of different materials and the second chalcogenide is a chalcogenide super lattice with a single out of plane orientation and wherein the second chalcogenide is configured to be programmed to a set state corresponding to a low resistance state and to a reset state corresponding to a high resistance state.
7. The memory element of claim 6 , wherein the first chalcogenide has a single crystal out of plane orientation.
8. The memory element of claim 6 , wherein the first chalcogenide is approximately 1 nanometer (nm) to 5 nm thick.
9. The memory element of claim 6 , the second chalcogenide is a mono crystal chalcogenide.
10. The memory element of claim 6 , wherein the second chalcogenide is a crystalline multi-material chalcogenide.
11. The memory element of claim 10 , wherein the crystalline multi-material chalcogenide includes a number of portions of germanium telluride (GeTe) alternating between a number of portions of antimony telluride (Sb 2 Te 3 ).
12. The memory element of claim 6 , wherein the single crystal out of plane orientation of the second chalcogenide is in the (00.1) direction.