IP Library › Granted Patent US 10,134,698
Granted Patent B2
US 10,134,698 · App. 15/223,525 · Granted Nov 20, 2018

Bonding pad structure, bonding ring structure, and MEMS device packaging method

Inventors: Fucheng Chen (Shanghai, CN); Linbo Shi (Shanghai, CN); Yao Liu (Shanghai, CN)
Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
H01L24/05B81C1/00269H01L24/02H01L24/29B81B2207/093B81C2203/019B81C2203/0109B81C2203/0118B81C2203/035H01L2224/0401H01L2224/052H01L2224/05013H01L2224/05078H01L2924/01013H01L2924/01032H01L2924/1461H01L2924/3841
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Quick Facts
Patent No.
US 10,134,698
App. No.
15/223,525
Granted
Nov 20, 2018
Kind
B2
Abstract

The present disclosure provides bond pad structures, boning ring structure; and MEMS device packaging methods. An exemplary bonding pad structure includes a plurality of first metal blocks made of a first metal material; and a plurality of second metal blocks made of a second metal material. The plurality of first metal blocks are used to prevent the squeezing out and extending of the plurality of second metal blocks. On at least one equal dividing plane of the bonding pad structure, the first metal material is shown at least one time; and the second metal material is shown at least one time.

Claims (37)

1. A bonding structure, comprising:

a plurality of first bonding pad structures formed on a first bonding surface, each of the plurality of first bonding pad structures comprising:

a plurality of first metal blocks made of a first metal material; and

a plurality of second metal blocks made of a second metal material, wherein

the plurality of first metal blocks and the plurality of second metal blocks are arranged alternately in a two dimensional matrix form, and

the plurality of first metal blocks are configured to confine squeezing out and extending of the plurality of the second metal blocks;

a plurality of second bonding pad structures formed on a second bonding surface, each of the plurality of second bonding pad structures comprising:

a plurality of third metal blocks made of the first metal material; and

a plurality of fourth metal blocks made of the second metal material, wherein

the plurality of first bonding pad structures and the plurality of second bonding pad structure are bonded together by forming an alloy between the plurality of first metal blocks on the first bonding surface and the plurality of fourth metal blocks on the second bonding surface and by forming the alloy between the plurality of second metal blocks on the first bonding surface and the plurality of third metal blocks on the second bonding surface.

2. The bonding structure according to claim 1 , on top viewing plane, wherein:

the plurality of first metal blocks and the plurality of second metal blocks are distributed into columns and rows alternately in the two dimensional matrix form;

one second metal block is disposed between two adjacent first metal blocks in each row; and

one first metal block is disposed between two adjacent second metal blocks in each column.

3. The bonding structure according to claim 1 , further comprising:

a first metal ring enclosing the plurality of first metal blocks and the second metal blocks on a top viewing plane of the bonding pad structure.

4. The bonding structure according to claim 1 , wherein:

the plurality of first metal blocks are a plurality of first metal stripes;

the plurality of second metal blocks are a plurality of second metal stripes; and

the plurality of first metal stripes and the plurality of second metal stripes are distributed alternatively on a top viewing plane of the bonding pad structure.

5. The bonding structure according to claim 4 , further comprising:

a first metal ring enclosing the first metal stripes and the second metal stripes on a top viewing plane.

6. The bonding structure according to claim 1 , wherein

the ductility of the second metal material is better than the ductility of the first metal material, the first metal material comprising Ge and the second metal material comprising Al.

7. The bonding structure according to claim 6 , on at least one equal dividing plane, wherein:

the first metal material and the second metal material are shown alternatively; and

most outer sides of the equal dividing plane are the first metal material.

8. The bonding structure according to claim 6 , wherein:

when circuit structures are electrically connected with the plurality of first bonding pad structures or when circuit structures are electrically connected with the plurality of second bonding pad structures:

each of the plurality of first bonding pad structures has more Ge atoms than Al atoms and each of the plurality of second bonding pad structures has more Ge atoms than Al atoms; and

a mass ratio between the first metal material Ge and the second metal material Al is in a range of approximately 0.47-0.59.

9. A bonding ring structure according to claim 1 , comprising:

a plurality of the bonding pad structures.

10. The bonding ring structure according to claim 9 , wherein:

the plurality of bonding pad structures are distributed into a rectangular ring.

11. The bonding structure according to claim 1 , wherein:

an area of each of the plurality of first bonding pad structures is smaller than an area of each of the plurality of second bonding pad structures.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2016
From: CHEN, FUCHENG; SHI, LINBO; LIU, YAO
To: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
Reel/Frame 039291/0816 →
Priority Claims (1)
CN 2015 1 0614165 · Sep 23, 2015 · national
Continuity (1)
Related Publication 20170084557A1 · Mar 23, 2017
Cited By (1)
US 12,322,729