Interrupted write operation in a serial interface memory with a portion of a memory address

1. A method comprising:

identifying a first portion of a read command that includes a first portion of a memory address of a memory device, wherein the first portion of the memory address comprises a number of bits of the memory address;

identifying a memory partition of the memory device based at least in part on the number of bits;

determining that a write operation is being performed at the identified memory partition;

interrupting the write operation in response to the determination that the write operation is being performed and identifying the first portion of the read command;

identifying, after a start of the interruption and before a completion of the interruption, a second portion of the read command that includes a second portion of the memory address, wherein the second portion of the memory address comprises a remaining number of bits of the memory address, the remaining number of bits identifying one or more memory cells of the memory partition; and

reading, after the completion of the interruption, the one or more memory cells indicated by the memory address.

2. The method of claim 1 , wherein reading the one or more memory cells is initiated before identifying the second portion of the read command.

3. The method of claim 1 , wherein the identifying the second portion of the read command and the interrupting the write operation occur during overlapping time intervals.

4. The method of claim 1 , further comprising:

receiving the first portion of the read command and the second portion of the read command serially.

5. The method of claim 1 , wherein the first portion of the memory address comprises a most significant bit of the memory address, and the second portion of the memory address comprises a least significant bit of the memory address.

6. The method of claim 1 , further comprising:

resuming the write operation after reading the one or more memory cells indicated by the memory address.

7. The method of claim 1 , further comprising:

storing a memory address of the write operation based at least in part on the determination.

8. The method of claim 1 , further comprising:

receiving a command to initiate the write operation.

9. The method of claim 1 , further comprising:

determining to initiate the write operation based at least in part on an internal memory process of the memory device.

10. The method of claim 9 , wherein the write operation comprises:

a background operation, or a refresh operation, or a wear leveling operation, or a garbage collection operation, or a bad block management operation, or a combination thereof.

11. An apparatus, comprising:

a memory array having a plurality of memory partitions, each of the plurality of memory partitions having a plurality of memory cells; and

a microcontroller configured to:

receive a read command;

identify a first portion of the read command that includes a first portion of a memory address of the memory array, wherein the first portion of the memory address comprises a number of bits;

identify one of the plurality of memory partitions based at least in part on the number of bits;

determine that a write operation is being performed at the identified memory partition;

interrupt the write operation in response to the determination that the write operation is being performed and identifying the first portion of the read command;

identify, after a start of the interruption and before a completion of the interruption, a second portion of the read command that includes a second portion of the memory address, wherein the second portion of the memory address comprises a remaining number of bits of the memory address, the remaining number of bits identifying one or more memory cells of the memory partition; and

access, after the completion of the interruption, the one or more memory cells indicated by the memory address.

12. The apparatus of claim 11 , further comprising a read circuit, or a sense amplifier, or a row decode circuit, or a column decode circuit, or a combination thereof, that is dedicated to a memory partition.

13. The apparatus of claim 11 , further comprising a memory controller configured to:

generate the read command based at least in part on receiving a command from a processor separate from the apparatus; and

provide the read command to the microcontroller.

14. The apparatus of claim 11 , wherein the memory cells each comprise a phase change memory.

15. The apparatus of claim 11 , wherein the microcontroller is configured to initiate reading the one or more memory cells before identifying the second portion of the read command.

16. The apparatus of claim 11 , wherein the microcontroller is configured to identify the second portion of the read command and interrupt the write operation during overlapping time intervals.

17. The apparatus of claim 11 , wherein the microcontroller is configured to receive the memory address in a sequence from a most significant bit of the memory address to a least significant bit of the memory address.

18. The apparatus of claim 11 , further comprising a memory to store a memory address of the write operation based at least in part on the determination, wherein the microcontroller is configured to resume the write operation based at least in part on the stored memory address of the write operation.

19. The apparatus of claim 11 , wherein the microcontroller is configured to:

determine to initiate the write operation based at least in part on an internal memory process, receive a command to initiate the write operation, or both.

20. An apparatus comprising:

a memory array; and

a memory controller, the memory controller configured to:

identify a first portion of a read command that references a first portion of a memory address of the memory array, wherein the first portion of the memory address comprises a number of bits;

identify a portion of the memory array based at least in part on the number of bits;

determine that a write operation is being performed at the identified portion of the memory array;

interrupt the write operation in response to the determination that the write operation is being performed and identifying the first portion of the read command;

identify, after a start of the interruption and before a completion of the interruption, a second portion of the read command that references a second portion of the memory address, wherein the second portion of the memory address comprises a remaining number of bits of the memory address, the remaining number of bits identifying a memory location of the indicated portion of the memory array; and

read, after the completion of the interruption, from the memory location indicated by the memory address.