Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
1. A solid-state imaging device comprising:
a first semiconductor substrate including a pixel array having a photoelectric conversion portion and a first multilayer wiring layer having a first connecting interconnect embedded in a first insulating layer; and
a second semiconductor substrate including a logic circuit and a second multilayer wiring layer having a second connecting interconnect embedded in a second insulating layer,
wherein the first semiconductor substrate and the second semiconductor substrate are connected to one another such that the first multilayer wiring layer and the second multilayer wiring layer are opposed to one another and are connected to one another via the first connecting interconnect and the second connecting interconnect, wherein at least a portion of the first connecting interconnect and at least a portion of the second connecting interconnect are disposed under the photoelectric conversion portion in a light incident direction, wherein the first connecting interconnect includes a first electrode, wherein the second connecting interconnect includes a second electrode, and wherein a bonding face area of the first electrode is less than a bonding face area of the second electrode, and wherein the first and second electrodes are electrically connected to the photoelectric conversion portion.
2. The solid-state imaging device of claim 1 , wherein a bonding face of the first semiconductor substrate includes a surface of the first connecting interconnect and a surface of the first insulating layer.
3. The solid-state imaging device of claim 2 , wherein a bonding face of the second semiconductor substrate includes a surface of the second connecting interconnect and a surface of the second insulating layer.
4. The solid-state imaging device of claim 1 , wherein the pixel array includes a plurality of photoelectric conversion portions.
5. The solid-state imaging device of claim 4 , further comprising:
a plurality of first electrodes, and
a plurality of second electrodes, wherein one first electrode and one second electrode are provided for each photoelectric conversion portion in the plurality of photoelectric conversion portions.
6. The solid-state imaging device of claim 5 , wherein each photoelectric conversion portion in the plurality of photoelectric conversion portions is connected to a wiring line in the first multilayer wiring layer.
7. The solid-state imaging device of claim 6 , wherein a protection film is formed on a first face side of the first semiconductor substrate.
8. The solid-state imaging device of claim 7 , wherein a color filter layer is disposed on the protection film.
9. The solid-state imaging device of claim 8 , wherein on-chip lenses are disposed on the color filter layer.
10. The solid-state imaging device of claim 1 , wherein the first connecting interconnect is formed from Cu.
11. The solid-state imaging device of claim 10 , wherein the second connecting interconnect is formed from Cu.
12. A solid-state imaging device comprising:
a first semiconductor substrate including a pixel array having a photoelectric conversion portion and a first multilayer wiring layer having a first connecting interconnect embedded in a first insulating layer; and
a second semiconductor substrate including a logic circuit and a second multilayer wiring layer having a second connecting interconnect embedded in a second insulating layer,
wherein the first semiconductor substrate and the second semiconductor substrate are connected to one another such that the first multilayer wiring layer and the second multilayer wiring layer are opposed to one another and are connected to one another via the first connecting interconnect and the second connecting interconnect, wherein at least a portion of the first connecting interconnect and at least a portion of the second connecting interconnect are disposed under the photoelectric conversion portion in a light incident direction, and wherein the first insulating layer and the second insulating layer are formed, from polyallyl ether.
13. The solid-state imaging device of claim 1 , the first insulating layer and the second insulating layer are formed from one of SiN, SiCN, SiON SiC and an organic resin material.
14. The solid-state imaging device of claim 1 , the first insulating layer and the second insulating layer are formed from at least two of SiN, SiCN, SiON SiC and an organic resin material.
15. The solid-state imaging device of claim 1 , further comprising:
an on-chip lens, wherein the photoelectric conversion portion is between the on-chip lens and the at least a portion of the first connecting interconnect.