IP Library Granted Patent US 10,032,703
Granted Patent B2
US 10,032,703 · App. 15/229,668 · Granted Jul 24, 2018

Package-on-package semiconductor assemblies and methods of manufacturing the same

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Quick Facts
Patent No.
US 10,032,703
App. No.
15/229,668
Granted
Jul 24, 2018
Kind
B2
Abstract

Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.

Claims (27)

1. A package-on-package system, comprising:

a first semiconductor device package having—

a base substrate including a first side having a die-attach region and a perimeter region;

a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance; and

a high density interconnect array over the perimeter region of the base substrate and outside of the die-attach region, wherein the interconnect array has a plurality of interconnects and extends from the first side of the base substrate by a second distance greater than the first distance, wherein the interconnect array comprises a first interconnect structure at the first side of the base substrate and a plurality of additional interconnect structures stacked over the first interconnect structure, and wherein individual interconnect structures include a stratum of a matrix material and a plurality of interconnect segments arranged in a pattern of the interconnect array; and

a second semiconductor device package having—

an interposer substrate having a top side, a bottom side, and a plurality of package terminals at the bottom side, wherein individual package terminals are electrically coupled to corresponding individual interconnects; and

a second semiconductor die attached to the top side of the interposer substrate.

2. The system of claim 1 wherein the interconnects of the interconnect array comprise a plurality of freestanding conductive posts spaced apart from each other by open gaps.

3. The system of claim 2 wherein the conductive posts comprise copper.

4. The system of claim 1 wherein the first semiconductor die is electrically connected to the second semiconductor die via the interconnect array.

5. The system of claim 1 wherein top surfaces of the stratum of matrix material and top surfaces of the individual interconnect segments of the individual interconnect structures are co-planar.

6. The system of claim 1 wherein individual interconnect segments of the individual interconnect structures are separated from one another by a distance less than 300 micrometers.

7. The system of claim 1 wherein the base substrate includes circuitry, and wherein each of the interconnects of the interconnect array is electrically coupled to the circuitry of the base substrate.

8. A package-on-package system, comprising:

a first semiconductor device package including—

a base substrate having a die-attach region;

a dielectric structure on the base substrate and comprising a plurality of stratums of a matrix material, and wherein the dielectric material has a cavity aligned with the die-attach region and a mounting surface at an elevation;

a first semiconductor die attached to the die-attach region of the base substrate and electrically coupled to the base substrate, wherein the first semiconductor die has a height relative to the base substrate that is less than the elevation of the mounting surface of the dielectric structure; and

a high density interconnect array outside the die-attach region and extending through the dielectric structure and being exposed at the mounting surface, wherein the interconnect array includes individual interconnects electrically coupled to the base substrate; and

a second semiconductor device package having—

an interposer substrate having a top side, a bottom side, and a plurality of package terminals at the bottom side, wherein individual package terminals are electrically coupled to one of the interconnects; and

a second semiconductor die attached to the top side of the interposer substrate.

9. The system of claim 8 wherein individual interconnects of the interconnect array comprise a plurality of interconnect segments in the stratums of the matrix material that are aligned along a common line normal to the front side of the base substrate.

10. The system of claim 8 wherein the base substrate further includes a perimeter region peripheral to the die attach region, and wherein the interconnect array is over the perimeter region.

11. The system of claim 8 wherein the first semiconductor die is electrically connected to the second semiconductor die via the interconnect array.

12. The system of claim 8 wherein the interconnects of the interconnect array comprise a plurality of freestanding conductive copper posts.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050680/0268 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 2 TO PATENT SECURITY AGREEMENT Recorded Feb 10, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041671/0902 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2016
From: FAY, OWEN R.; MURRAY, JACK E.
To: MICRON TECHNOLOGY, ING.
Reel/Frame 039386/0955 →