Etch stop for airgap protection
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.
1. A semiconductor device comprising:
a gate structure on a channel region of a semiconductor device, wherein source and drain regions are on opposing sides of the channel region, wherein the semiconductor device further comprises a fin structure; and
a composite gate sidewall spacer present on a sidewall of the gate structure, wherein the composite gate sidewall spacer includes a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid.
2. The semiconductor device of claim 1 , wherein the first composition is a dielectric material that is different from a dielectric material of the second composition.
3. The semiconductor device of claim 1 , wherein the first composition portion is present atop a substrate, and the second composition portion is present on the first composition portion.
4. The semiconductor device of claim 3 , wherein the first composition portion has a width that is greater than the second composition portion.
5. The semiconductor device of claim 1 , wherein the source and drain regions are comprised of n-type or p-type doped epitaxial semiconductor material.
6. The semiconductor device of claim 1 , wherein the first composition portion includes a conformal dielectric layer encapsulating the air gap, wherein the conformal dielectric layer comprises a dielectric selected from the group consisting of silicon nitride; silicon oxide (SiO 2 ); silicon carbon boron nitride (SiCBN), silicon oxycarbonitride (SiOCN), fluorine doped silicon dioxide, carbon doped silicon dioxide, porous silicon dioxide, porous carbon doped silicon dioxide, organosilicate glass (OSG), diamond-like carbon (DLC) and combinations thereof.
7. The semiconductor device of claim 1 , wherein the second composition portion includes a dielectric composition selected from the group consisting of HfO 2 , ZrO 2 , Al 2 O 3 , TiO 2 , La 2 O 3 , SrTiO 3 , LaAlO 3 , Y 2 O 3 and mixtures thereof.
8. The semiconductor device of claim 1 , wherein the second composition portion includes a dielectric composition selected from the group consisting of hafnium silicon oxide, hafnium silicon oxynitride, zirconium silicon oxide, zirconium silicon oxynitride, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate, nitrided hafnium silicate (HfSiON), lanthanum oxide (La 3 O 2 ), zirconium silicate (ZrSiO x ) and combinations thereof.
9. A semiconductor device comprising:
a gate structure on a channel region of a semiconductor device, wherein source and drain regions are on opposing sides of the channel region, wherein the gate structure comprises a gate conductor having a lesser width at its interface with a gate dielectric than its width at its upper surface; and
a composite gate sidewall spacer present on a sidewall of the gate structure, wherein the composite gate sidewall spacer includes a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid.
10. A semiconductor device comprising:
a gate structure on a channel region of a fin structure, wherein source and drain regions are on opposing sides of the channel region; and
a composite gate sidewall spacer present on a sidewall of the gate structure, wherein the composite gate sidewall spacer includes a first composition portion having an air gap encapsulated therein, and a second composition portion present atop the first composition portion, wherein the first portion has a greater width than the second portion.
11. The semiconductor device of claim 10 , wherein the second composition portion is entirely solid.
12. The semiconductor device of claim 10 , wherein the first composition is a dielectric material that is different from a dielectric material of the second composition.
13. The semiconductor device of claim 10 , wherein the first composition portion is present atop a substrate that supports the fin structure, and the second composition portion is present on the first composition portion.
14. The semiconductor device of claim 10 , wherein the source and drain regions are comprised of an epitaxial semiconductor material doped to an n-type or p-type conductivity.
15. The semiconductor device of claim 10 , wherein the first composition portion includes a conformal dielectric layer encapsulating the air gap, wherein the conformal dielectric layer comprises a dielectric selected from the group consisting of silicon nitride; silicon oxide (SiO 2 ); silicon carbon boron nitride (SiCBN), silicon oxycarbonitride (SiOCN), fluorine doped silicon dioxide, carbon doped silicon dioxide, porous silicon dioxide, porous carbon doped silicon dioxide, organosilicate glass (OSG), diamond-like carbon (DLC) and combinations thereof.
16. The semiconductor device of claim 10 , wherein the second composition portion includes a dielectric composition selected from the group consisting of HfO 2 , ZrO 2 , Al 2 O 3 , TiO 2 , La 2 O 3 , SrTiO 3 , LaAlO 3 , Y 2 O 3 and mixtures thereof.
17. The semiconductor device of claim 10 , wherein the second composition portion includes a dielectric composition selected from the group consisting of hafnium silicon oxide, hafnium silicon oxynitride, zirconium silicon oxide, zirconium silicon oxynitride, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate, nitrided hafnium silicate (HfSiON), lanthanum oxide (La 3 O 2 ), zirconium silicate (ZrSiO x ) and combinations thereof.
18. The semiconductor device of claim 10 , wherein the gate structure includes at least one gate dielectric in direct contact with the channel region of the fin structure, and at least one gate conductor on the at least one gate dielectric.
19. The semiconductor device of claim 10 , wherein the gate structure comprises a gate conductor having a lesser width at its interface with a gate dielectric than its width at its upper surface.