Method for selective under-etching of porous silicon
View Patent ↗A method for making a solar cell is disclosed. In accordance with the method of the present invention a composite wafer is formed. The composite layer includes a single crystal silicon wafer, a silicon-based device layer and sacrificial porous silicon sandwiched therebetween. The composite wafer is treated to an aqueous etchant maintained below ambient temperatures to selectively etch the sacrificial porous silicon and release or undercut the silicon-based layer from the single crystal silicon wafer. The released silicon device layer is attached to a substrate to make a solar cell and the released single crystal silicon wafer is reused to make additional silicon device layer.
1. A method of selectively etching a silicon wafer, the method comprising:
a) providing a sacrificial porous silicon layer on a single crystal silicon wafer; and
b) selectively etching the sacrificial porous silicon layer with an aqueous etchant;
wherein the aqueous etchant is maintained at a temperature in a range of 0° C. to 10° C. during step b) and the aqueous etchant comprises one or more of potassium hydroxide, sodium hydroxide and hydrogen fluoride in a concentration ranging from a non-zero amount up to 5 wt. % based on the total weight of the aqueous etchant.
2. The method of claim 1 , wherein the aqueous etchant further comprises a surfactant.
3. The method of claim 2 , wherein the surfactant is selected from the group consisting of anionic surfactants, fatty acid surfactants, cationic surfactants, zwitterionic surfactants, and non-ionic surfactants.
4. The method of claim 1 , wherein the aqueous etchant comprises 1% or less by weight of the surfactant.
5. The method of claim 1 , wherein the aqueous etchant further comprises an alcohol.
6. The method of claim 5 , wherein the alcohol is isopropyl alcohol.
7. The method of claim 1 further comprising subsequent to step a) and prior to step b), forming a crystalline silicon device layer on the sacrificial porous silicon layer.
8. The method of claim 7 , wherein the crystalline silicon device layer is patterned with access grooves or holes.
9. The method of claim 8 , wherein the aqueous etchant contacts the sacrificial porous silicon layer via the access grooves or holes in the crystalline silicon device layer.
10. The method of claim 1 , wherein the sacrificial porous silicon layer comprises a material selected from the group consisting of a carbon doped oxide, a spin-on-glass (SOG) and fluoridated silicon glass (FSG).
11. The method of claim 7 , wherein the crystalline silicon layer is a p-doped crystalline silicon layer.
12. A method of selectively etching a silicon wafer, the method comprising:
a) providing a sacrificial porous silicon layer on a single crystal silicon wafer; and
b) selectively etching the sacrificial porous silicon layer with an aqueous etchant, the aqueous etchant comprising:
isopropyl alcohol in a concentration ranging from a non-zero amount up to 10 wt. % based on the total weight of the aqueous etchant; and
one or more of potassium hydroxide, sodium hydroxide, and hydrogen fluoride in a concentration ranging from a non-zero amount up to 5 wt. % based on the total weight of the aqueous etchant;
wherein during step b), the aqueous etchant is maintained at a temperature in a range of 0° C. to 10° C.