Semiconductor structures including liners comprising alucone and related methods
A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.
1. A semiconductor device, comprising:
stack structures comprising a first chalcogenide material over a material and a second chalcogenide material over the first chalcogenide material; and
a liner over sidewalls of at least a portion of the stack structures, the liner comprising a first portion comprising aluminum oxide in contact with the sidewalls of the stack structures and a second portion comprising alucone over the first portion, the second portion further comprising silicon atoms, nitrogen atoms, or a combination thereof.
2. The semiconductor device of claim 1 , wherein the liner comprises a gradient of alucone and aluminum oxide over the sidewalls of the stack structures.
3. The semiconductor device of claim 1 , wherein the liner comprises a ratio of aluminum oxide to alucone of from about 1:1 to about 1:10.
4. The semiconductor device of claim 1 , wherein the liner overlies an entirety of the sidewalls.
5. The semiconductor device of claim 1 , wherein the liner further comprises a third portion between the first portion and the second portion, the third portion comprising a greater amount of alucone than the first portion.
6. The semiconductor device of claim 1 , wherein adjacent stack structures of the stack structures are separated from each other by a distance of between about 20 nm and about 60 nm.
7. A semiconductor device, comprising:
stack structures comprising at least one chalcogenide material over a material; and
a liner comprising a first portion comprising aluminum oxide contacting opposing sidewalls of the stack structures and a second portion comprising alucone over the first portion.
8. The semiconductor device of claim 7 , wherein the liner has a thickness of between about 5 Å and about 30 Å.
9. The semiconductor device of claim 7 , further comprising a charge trapping material over the liner.
10. The semiconductor device of claim 7 , wherein the liner comprises a gradient of alucone, a concentration of alucone increasing from about zero percent at a portion of the liner proximal the stack structures to about one-hundred percent at a portion of the liner distal from the stack structures.
11. A method of forming a semiconductor device, the method comprising:
forming stack structures over a material, forming the stack structures comprising forming a first chalcogenide material over the material and forming a second chalcogenide material over the first chalcogenide material;
forming aluminum oxide over and in contact with sidewalls of the stack structures; and
forming alucone over the aluminum oxide.
12. The method of claim 11 , wherein forming alucone over the aluminum oxide comprises forming the alucone to exhibit a gradient of alucone and aluminum oxide.