Method of manufacturing an electronic device and electronic device manufactured thereby

1. A method of manufacturing an electronic device, the method comprising:

coupling a second side of a semiconductor die to a first side of a substrate, wherein the substrate comprises a temporary carrier;

forming a first encapsulating material, wherein the first encapsulating material contacts and covers at least entire lateral sides of the semiconductor die and the first side of the substrate;

forming a second encapsulating material, wherein the second encapsulating material covers at least a first side of the first encapsulating material;

after said forming a second encapsulating material, removing the temporary carrier;

after said removing the temporary carrier, forming a signal redistribution structure on the second side of the semiconductor die and on a second side of the first encapsulating material; and

after said forming the signal redistribution structure, removing the second encapsulating material.

2. The method of claim 1 , wherein the first side of the substrate comprises a permanent interposer on the temporary carrier, and said coupling comprises permanently connecting the semiconductor die to the permanent interposer.

3. The method of claim 1 , wherein said coupling comprises coupling the semiconductor die to a first side of the temporary carrier with an adhesive layer.

4. The method of claim 1 , wherein:

said forming a first encapsulating material comprises performing a first molding process utilizing a liquid molding material; and

said forming a second encapsulating material comprises performing a second molding process over the first encapsulating material utilizing a powdered molding material.

5. The method of claim 1 , wherein the first encapsulating material has a first modulus, and the second encapsulating material has a second modulus that is at least 25% higher than the first modulus.

6. The method of claim 1 , wherein the first encapsulating material has a first maximum filler cut size, and the second encapsulating material has a second maximum filler cut size that is at least 25% higher than the first maximum filler cut size.

7. The method of claim 1 , wherein:

said forming a first encapsulating material comprises forming the first encapsulating material to have a first side facing away from the substrate, wherein the first side comprises apertures into which a second surface of the second encapsulating material extends; and

said forming a second encapsulating material comprises forming the second encapsulating material to have a planar first surface facing away from the substrate.

8. The method of claim 1 , wherein the second encapsulating material only contacts the first encapsulating material at the first side of the first encapsulating material.

9. The method of claim 1 , wherein:

the substrate comprises a permanent interposer;

said coupling comprises coupling the semiconductor die to a first side of the interposer; and

said forming the signal redistribution structure comprises forming the signal redistribution structure on a second side of the interposer opposite the first side of the interposer.

10. The method of claim 1 , wherein said forming a signal redistribution structure comprises:

forming a first dielectric layer directly on only the second side of the semiconductor die and a second side of the first encapsulating material;

forming a conductive redistribution layer directly on the first dielectric layer; and

forming a second dielectric layer directly on the conductive redistribution layer.

11. A method of manufacturing an electronic device, the method comprising:

forming a reconstituted wafer, said forming comprising:

coupling a plurality of semiconductor dies to a first side of a substrate, wherein the substrate comprises a temporary carrier; and

forming a first encapsulating material, wherein the first encapsulating material covers at least lateral sides of each of the plurality of semiconductor dies and the first side of the substrate, and wherein the first encapsulating material is the only material laterally between adjacent dies of the plurality of semiconductor dies;

forming a second encapsulating material on the reconstituted wafer, wherein the second encapsulating material covers at least a first side of the first encapsulating material;

after said second encapsulating, removing the temporary carrier; and

after said removing the temporary carrier, forming a respective signal redistribution structure on a side of each of the plurality of semiconductor dies and on a second side of the first encapsulating material.

12. The method of claim 11 , comprising after said forming the signal redistribution structures, removing the second encapsulating material, wherein said removing the second encapsulating material comprises grinding the second encapsulating material and grinding at least a portion of the first encapsulating material.

13. The method of claim 11 , wherein the first encapsulating material has a first modulus, and the second encapsulating material has a second modulus that is at least 25% higher than the first modulus.

14. The method of claim 11 , wherein said forming a first encapsulating material comprises utilizing liquid molding compound, and said forming a second encapsulating material comprises molding a powdered molding compound over the first encapsulating material.

15. The method of claim 11 , comprising after said forming the signal redistribution structures and before said removing the second encapsulating material, forming a respective package interconnection structure coupled to each respective signal redistribution structure.

16. A method of manufacturing an electronic device, the method comprising:

forming a first encapsulating material on a semiconductor die and a substrate, wherein the first encapsulating material covers at least lateral sides of the semiconductor die and an upper side of the substrate;

forming a second encapsulating material on the first encapsulating material, wherein the second encapsulating material covers only an upper side of the first encapsulating material; and

after said forming a first encapsulating material and said forming a second encapsulating material, further processing the electronic device,

wherein said further processing comprises forming a dielectric layer having an upper side that contacts at most a lower side of the semiconductor die and a lower side of the first encapsulating material.

17. The method of claim 16 , comprising after said further processing, removing the second encapsulating material.

18. The method of claim 16 , comprising before said forming a first encapsulating material, coupling the semiconductor die to a substrate comprising a temporary carrier, and after said forming a second encapsulating material, removing the temporary carrier.

19. The method of claim 16 , wherein the semiconductor die does not protrude from the first encapsulating material.

20. The method of claim 16 , wherein said further processing the electronic device comprises forming a signal redistribution structure on the semiconductor die and on the first encapsulating material.