Hybrid memory device using different types of capacitors
The hybrid memory device may include volatile and non-volatile memory cells on a single substrate, or die. The non-volatile memory cells may have ferroelectric capacitors and the volatile memory cells may have paraelectric or linear dielectric capacitors for their respective logic storage components. In some examples, the volatile memory cells may be used as a cache for the non-volatile memory cells. Or the non-volatile memory cells may be used as a back-up for the volatile memory cells. By placing both types of cells on a single die, rather than separate dies, various performance metrics may be improved, including those related to power consumption and operation speed.
1. A memory apparatus, comprising:
a substrate;
a first memory cell formed in a first recess positioned on the substrate and comprising a first type of capacitor; and
a second memory cell formed in a second recess positioned on the substrate, the second memory cell comprising a second type of capacitor that is different from the first type of capacitor, wherein the first memory cell and the second memory cell each comprise memory cells of a same array, and wherein at least one row of a plurality of rows or at least one column of a plurality of columns comprises memory cells that comprise capacitors of the second type of capacitor and a remainder of rows of the plurality of rows or a remainder of columns of the plurality of columns comprise memory cells that comprise capacitors of the first type of capacitor; and
a dielectric material that is in direct contact with a first surface, a second surface, and a third surface of at least one of the first memory cell formed in the first recess or the second memory cell formed in the second recess, wherein a top portion of the dielectric material is in direct contact with the first type of capacitor and the second type of capacitor.
2. The memory apparatus of claim 1 , wherein the first memory cell is a non-volatile memory cell and the second memory cell is a volatile memory cell.
3. The memory apparatus of claim 1 , wherein the first type of capacitor comprises a ferroelectric insulator.
4. The memory apparatus of claim 3 , wherein the ferroelectric insulator comprises a compound comprising hafnium, zirconium, or oxygen, or any combination thereof.
5. The memory apparatus of claim 1 , wherein the second type of capacitor comprises a capacitor with a paraelectric material.
6. The memory apparatus of claim 1 , wherein at least one of the first memory cell or the second memory cell is in electronic communication with a buried word line.
7. The memory apparatus of claim 1 , wherein a largest dimension of an opening of the first recess and the second recess is less than 100 nanometers.
8. The memory apparatus of claim 1 , wherein the first recess or the second recess is formed in the dielectric material positioned on the substrate.
9. The memory apparatus of claim 1 , wherein the first memory cell and the second memory cell each comprise memory cells of a different array.
10. The memory apparatus of claim 1 , wherein the array comprises the plurality of rows of memory cells and the plurality of columns of memory cells, wherein each row of the plurality of rows or each column of the plurality of columns comprises a common access line.
11. The memory apparatus of claim 1 , wherein:
the array comprises the plurality of rows of memory cells and the plurality of columns of memory cells;
each row of the plurality of rows comprises a common access line and each column of the plurality of columns comprises a common digit line.
12. The memory apparatus of claim 1 , further comprising:
a first memory array that includes the first memory cell, wherein each memory cell of the first memory array comprises the first type of capacitor; and
a second memory array that includes the second memory cell, wherein each memory cell of the second memory array comprises the second type of capacitor.
13. The memory apparatus of claim 1 , wherein at least one of the first recess or the second recess is formed in the substrate.
14. The memory apparatus of claim 13 , wherein the substrate comprises the dielectric material.
15. The memory apparatus of claim 1 , further comprising:
a first conductive material in contact with the first surface, the second surface, and the third surface of at least one of the first memory cell formed in the first recess or the second memory cell in the second recess.
16. The memory apparatus of claim 1 , further comprising:
a second conductive material in contact with the first memory cell formed in the first recess; and
a third conductive material in contact with the second memory cell formed in the second recess.
17. The memory apparatus of claim 1 , wherein the first memory cell is adjacent to the second memory cell.