IP Library Granted Patent US 10,788,751
Granted Patent B2
US 10,788,751 · App. 15/253,005 · Granted Sep 29, 2020

Coating composition for use with an overcoated photoresist

Inventors: Matthew Grandbois (Marlborough, MA); Myung Yeol Kim (Chungcheongnam-Do, KR); Eui Hyun Ryu (Chungcheongnam-Do, KR); Jae Hwan Sim (Chungcheongnam-Do, KR); Min Kyung Jang (Chungcheongnam-Do, KR); Jung-June Lee (Chungcheongnam-Do, KR)
Assignees: Rohm and Haas Electronic Materials LLC; Rohm and Haas Electronic Materials Korea Ltd.
G03F7/091C07D487/04C08G8/04C08L61/06C09D5/006C09D167/00G03F7/11H01L21/0274H01L21/0276H01L21/02112H01L21/02282H01L21/3081C08K5/3445
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Quick Facts
Patent No.
US 10,788,751
App. No.
15/253,005
Granted
Sep 29, 2020
Kind
B2
Abstract

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I):

Claims (38)

1. A method for forming a photoresist relief image, comprising:

a) applying on a substrate a layer of a coating composition comprising:

1) a resin; and

2) a crosslinker that comprises a structure of Formula (I):

wherein in Formula (I):

each R is independently selected from hydrogen, optionally substituted alkyl, optionally substituted heteroalkyl, optionally substituted carbocyclic aryl, or optionally substituted heteroaryl,

with at least one R group being a cyclohexyl moiety;

R′ and R″ are each independently selected from hydrogen, optionally substituted alkyl or optionally substituted heteroalkyl, optionally substituted carbocyclic aryl, or optionally substituted heteroaryl; and

b) applying a layer of a photoresist composition above the coating composition layer; and

c) imaging the photoresist composition layer and developing the imaged photoresist composition layer.

2. The method of claim 1 wherein the crosslinker component has a molecular weight of at least 400 daltons.

3. The method of claim 1 wherein the crosslinker component has a molecular weight of less than 1500 daltons.

4. The method of claim 1 wherein the crosslinker component has a degradation temperature of greater than 250° C.

5. The method of claim 1 wherein each R group is other than hydrogen.

6. The method of claim 1 wherein the coating composition layer is thermally treated to cure the composition coating layer before applying the photoresist composition layer.

7. The method of claim 1 wherein the crosslinker is selected from the group consisting of the following structures:

8. A coated substrate comprising:

a substrate having thereon:

a) a coating composition comprising:

1) a resin; and

2) a crosslinker component;

b) a layer of a photoresist composition above the coating composition layer,

wherein the crosslinker component prior to reaction with the resin comprises a structure of Formula (I):

wherein in Formula (I):

each R is independently selected from hydrogen, optionally substituted alkyl, optionally substituted heteroalkyl, optionally substituted carbocyclic aryl, or optionally substituted heteroaryl,

with at least one R being a cyclohexyl moiety;

R′ and R″ are each independently selected from hydrogen, optionally substituted alkyl or optionally substituted heteroalkyl, optionally substituted carbocyclic aryl, or optionally substituted heteroaryl.

9. The coated substrate of claim 8 wherein the crosslinker is:

10. A crosslinker that comprises a structure selected from:

11. The crosslinker of claim 10 wherein the crosslinker comprises the following structure:

12. A coating composition for use with an overcoated photoresist, the coating comprising:

1) a resin; and

2) a crosslinker that comprises a structure of Formula (I):

wherein in Formula (I):

each R is independently selected from hydrogen, optionally substituted alkyl, optionally substituted heteroalkyl, optionally substituted carbocyclic aryl, or optionally substituted heteroaryl,

with at least one R group comprises an optionally substituted cyclohexyl group;

R′ and R″ are each independently selected from hydrogen, optionally substituted alkyl or optionally substituted heteroalkyl, optionally substituted carbocyclic aryl, or optionally substituted heteroaryl.

13. The composition of claim 12 wherein the crosslinker comprises the following structure:

Assignments (5)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 069272/0383 →
CHANGE OF NAME Recorded Oct 17, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS KOREA LTD
To: DUPONT SPECIALTY MATERIALS KOREA LTD
Reel/Frame 069185/0438 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 15, 2016
From: GRANDBOIS, MATTHEW, MR.; KIM, MYUNG YEOL, MR.; RYU, EUI HYUN, MR.; SIM, JAE HWAN, MR.; JANG, MIN KYUNG, MR.; LEE, JUNG-JUNE
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC; ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.
Reel/Frame 039757/0846 →
Continuity (2)
Provisional Application 62212095 · Aug 31, 2015
Related Publication 20170059991A1 · Mar 2, 2017