Plasma processing apparatus and plasma processing method
The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.
1. A plasma processing apparatus comprising:
a plasma processing chamber in which a sample is plasma-processed;
a first radio frequency power supply that supplies a first radio frequency electric power for generating plasma, the first radio frequency electric power being pulse-modulated with a first pulsed waveform having a first period and a second period;
a sample stage on which the sample is mounted;
a second radio frequency power supply that supplies a second radio frequency electric power to the sample stage, the second radio frequency electric power being pulse-modulated with a second pulsed waveform having an on period and an off period; and
a controller configured to:
control the first radio frequency power supply to supply the first radio frequency electric power during the first period to generate the plasma and the first radio frequency electric power during the second period to maintain after-glow of the plasma without igniting the plasma;
control a predetermined time delay between a start of the second period and a start of the on period;
control the second period so as to include the on period;
control the first radio frequency electric power during the second period so as to be greater than the second radio frequency electric power during the on period;
control the second radio frequency electric power so as to only be supplied during the second period; and
control to turn off output of the second radio frequency power supply when a peak-to-peak voltage of a radio frequency voltage applied from the second radio frequency power supply during the on period reaches a predetermined value.
2. The plasma processing apparatus according to claim 1 , wherein the time delay is 0.05 milliseconds.
3. The plasma processing apparatus according to in claim 1 , wherein the predetermined value the controller is configured to control to turn off output of the second radio frequency power supply when the peak-to-peak voltage of the radio frequency voltage applied from the second radio frequency power supply during the on period reaches is an upper limit (Vmax), which is the predetermined value.
4. The plasma processing apparatus according to claim 1 ,
wherein the off period includes the first period.
5. A plasma processing apparatus comprising:
a plasma processing chamber in which a sample is plasma-processed;
a first radio frequency power supply that supplies a first radio frequency electric power for generating plasma, the first radio frequency electric power being pulse-modulated with a first pulsed waveform having a first period and a second period;
a sample stage on which the sample is mounted;
a second radio frequency power supply that supplies a second radio frequency electric power to the sample stage, the second radio frequency electric power being pulse-modulated with a second pulsed waveform having an on period and an off period; and
a controller configured to:
control the first radio frequency power supply to supply the first radio frequency electric power during the first period to generate the plasma and the first radio frequency electric power during the second period to maintain after-glow of the plasma;
control the second period so as to include the on period;
control the off period so as to include the first period; and
control the second radio frequency electric power so as to only be supplied during the second period; and
control to turn off output of the second radio frequency power supply when a peak-to-peak voltage of a radio frequency voltage applied from the second radio frequency power supply during the on period reaches a predetermined value.
6. The plasma processing apparatus according to claim 5 ,
wherein the controller is further configured to control a period of the first period so as to be smaller than a period of the second period.
7. The plasma processing apparatus according to in claim 5 , wherein the predetermined value is an upper limit (Vmax).
8. A plasma processing apparatus comprising:
a plasma processing chamber in which a sample is plasma-processed;
a first radio frequency power supply that supplies a first radio frequency electric power for generating plasma, the first radio frequency electric power being pulse-modulated with a first pulsed waveform having a first period and a second period;
a sample stage on which the sample is mounted;
a second radio frequency power supply that supplies a second radio frequency electric power to the sample stage, the second radio frequency electric power being pulse-modulated with a second pulsed waveform having an on period and an off period; and
a controller configured to:
control the first radio frequency power supply to supply the first radio frequency electric power during the first period to generate the plasma and the first radio frequency electric power during the second period to maintain after-glow of the plasma without igniting the plasma
control the second period so as to include the on period;
control the second radio frequency electric power so as to only be supplied during the second period;
control a period of the first period so as to be smaller than a period of the second period; and
control to turn off output of the second radio frequency power supply when a peak-to-peak voltage of a radio frequency voltage applied from the second radio frequency power supply during the on period reaches a predetermined value.
9. The plasma processing apparatus according to claim 8 ,
wherein the controller is further configured to control the off period so as to include the first period.
10. The plasma processing apparatus according to claim 8 ,
wherein the controller is further configured to control a period of the first period so as to be smaller than a period of the on period.
11. The plasma processing apparatus according to claim 10 ,
wherein the controller is further configured to control a period of the on period so as to be longer than a period of the off period.
12. The plasma processing apparatus according to claim 11 ,
wherein the controller is further configured to control a period of the second period so as to be longer than a period of the off period.
13. The plasma processing apparatus according to in claim 8 , wherein the predetermined value is an upper limit (Vmax).