Semiconductor device and a method of manufacturing the same
A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.
1. A semiconductor device comprising:
a semiconductor substrate having a first side extending along a first direction, a second side extending along the first direction and being opposite to the first side, a third side extending along a second direction perpendicular to the first direction, and a fourth side extending along the second direction and being opposite to the third side;
a multilayer wiring structure formed over the semiconductor substrate;
a first pad electrode, a second pad electrode and dummy patterns formed in an uppermost layer of the multilayer wiring structure;
a first insulating film formed over the first pad electrode, the second pad electrode and the dummy patterns;
a first opening and a second opening formed in the first insulating film and located over the first pad electrode and the second pad electrode, respectively; and
a first bump electrode and a second bump electrode formed over the first insulating film and electrically connected to the first pad electrode and the second pad electrode through the first opening and the second opening, respectively,
wherein the first pad electrode and the second pad electrode are located near the first side, at substantially a same distance from the first side, and are spaced along the first direction in a plan view, and
wherein, in the first direction, at least one of the dummy patterns is located between the first pad electrode and the second pad electrode in the plan view.
2. A semiconductor device according to the claim 1 ,
wherein some of the dummy patterns are located under the first bump electrode.
3. A semiconductor device according to the claim 2 ,
wherein the first insulating film includes a silicon oxide film and a silicon nitride film formed over the silicon oxide film.
4. A semiconductor device according to the claim 3 ,
wherein a top surface of the silicon oxide film is flattened by a polishing treatment.
5. A semiconductor device according to the claim 1 ,
wherein the first insulating film includes a silicon oxide film and a silicon nitride film formed over the silicon oxide film.
6. A semiconductor device according to the claim 5 ,
wherein a top surface of the silicon oxide film is flattened by a polishing treatment.
7. A semiconductor device according to the claim 1 ,
wherein a length of the first side is larger than a length of the third side.
8. A semiconductor device according to the claim 7 ,
wherein the semiconductor device is an LCD driver for a liquid crystal display.
9. A semiconductor device according to the claim 8 ,
wherein the first bump electrode and the second bump electrode include Au.