Semiconductor device and manufacturing method thereof
A semiconductor device includes a semiconductor substrate, an isolation structure, and a spacer. The semiconductor substrate includes at least one fin structure. The isolation structure is partly disposed in the fin structure and partly disposed above the fin structure. The fin structure includes a first fin and a second fin elongated in the same direction. A part of the isolation structure is disposed between the first fin and the second fin in the direction where the first fin and the second fin are elongated. The spacer is disposed on sidewalls of the isolation structure on the fin structure. The isolation structure in the present invention is partly disposed in the fin structure and partly disposed above the fin structure. The negative influence of a gate structure formed on the isolation structure and sinking into the isolation structure on the isolation performance of the isolation structure may be avoided accordingly.
1. A semiconductor device, comprising:
a semiconductor substrate, wherein the semiconductor substrate comprises at least one fin structure;
an isolation structure partly disposed in the fin structure and partly disposed on the fin structure, wherein the fin structure comprises a first fin and a second fin, the first fin and the second fin are elongated in a same direction, and a part of the isolation structure is disposed between the first fin and the second fin in the direction where the first fin and the second fin are elongated;
a spacer disposed on sidewalls of the isolation structure disposed on the fin structure;
a first gate structure disposed on the first fin and disposed straddling the first fin; and
a second gate structure disposed on the second fin and disposed straddling the second fin, wherein the isolation structure is disposed between the first gate structure and the second gate structure, and the spacer is further disposed on sidewalls of the first gate structure and sidewalls of the second gate structure, wherein a part of the spacer is disposed between the first gate structure and the isolation structure, wherein the spacer disposed between the first gate structure and the isolation structure and disposed on the sidewalls of the first gate structure is separated from the spacer disposed between the first gate structure and the isolation structure and disposed on the sidewalls of the isolation structure.
2. The semiconductor device according to claim 1 , wherein the isolation structure comprises:
a first part disposed in the fin structure; and
a second part disposed on the first part and the fin structure, wherein the second part is directly connected to the first part, and the spacer is disposed on sidewalls of the second part of the isolation structure.
3. The semiconductor device according to claim 2 , wherein the second part of the isolation structure is disposed on the first fin and the second fin.
4. The semiconductor device according to claim 1 , wherein the isolation structure comprises a T-shaped structure in a cross-sectional view of the semiconductor device.
5. The semiconductor device according to claim 1 , further comprising:
an interlayer dielectric directly disposed on the isolation structure.
6. The semiconductor device according to claim 1 , wherein the isolation structure, the first gate structure, and the second gate structure have at least one edge or face extending in a direction wherein each of the directions are parallel with one another.
7. The semiconductor device according to claim 1 , further comprising:
a plurality of source/drain regions, wherein each of the source/drain regions is at least partially disposed in the fin structure, a part of the source/drain regions are disposed on two sides of the first gate structure in the direction where the first fin and the second fin are elongated, and another part of the source/drain regions are disposed on two sides of the second gate structure in the direction where the first fin and the second fin are elongated.
8. The semiconductor device according to claim 7 , wherein some of the source/drain regions are disposed between the isolation structure and the first gate structure or disposed between the isolation structure and the second gate structure in the direction where the first fin and the second fin are elongated.