CMP pad conditioning assembly
A chemical mechanical planarization (CMP) pad conditioning assembly that includes one or more support structures positioned between one or more abrasive regions of the pad conditioning assembly is disclosed. The support structures and abrasive regions can be separated by one or more channels. A top surface of the one or more support structures is not co-planar with the top surface of the abrasive regions of the pad conditioning assembly, and the height of the top surface of the one or more support structures when measured to the pad facing surface of the pad conditioning assembly backing plate is less than the height of the top surfaces of the abrasive regions when measured to the pad facing surface of the pad conditioning assembly.
1. A CMP pad conditioning assembly comprising:
a backing plate that has a first face and a second face, said backing plate includes a mounting structure on the second face; said mounting structure secures the backing plate to a chemical mechanical planarization tool;
one or more abrasive regions on the first face of said backing plate that comprise one or more protrusions, tops of said protrusions reside in a first plane that has a first average height measured from the first face of the backing plate;
a single supporting structure on the first face of said backing plate and at least partially covering a central region of said backing plate, said single supporting structure comprising a plurality of supporting segments positioned between said abrasive regions and separated from said abrasive regions, said single supporting structure having a top surface, the top surface of said single supporting structure residing in a second plane that has a second average height measured from the first face of the backing plate, wherein the first average height of the first plane is greater than the second average height of the second plane; and
one or more channels positioned between one or more of the supporting segments of the single supporting structure and the one or more abrasive regions, the one or more channels having a length and configured to allow flow of CMP pad debris, slurry or liquid away from the CMP pad conditioning assembly along its length.
2. The pad conditioning assembly of claim 1 wherein the plurality of supporting segments of the single supporting structure form the one or more channels with the one or more abrasive regions.
3. The pad conditioning assembly as in claim 1 , that further comprises a coating of a hard polycrystalline material on all or a portion the abrasive regions.
4. The pad conditioning assembly as in claim 1 , in which the first average height of the first plane is greater than the second average height of the second plane by between 25 microns and 200 microns.
5. The pad conditioning assembly of claim 1 where the one or more channels have a channel width with a largest dimension that is between 1500 microns and 2500 microns.
6. The pad conditioning assembly of claim 1 , wherein the support structure is a polymeric material.
7. The pad conditioning assembly of claim 2 wherein the abrasive regions include protrusions or elongated cutting structures.
8. The pad conditioning assembly of claim 7 wherein the abrasive regions are one or more segments fixed to the backing plate.
9. The pad conditioning assembly of claim 8 further comprising a coating of a hard material atop the abrasive regions.
10. The pad conditioning assembly of claim 9 where the first average height of the first plane is greater than the second average height of the second plane by between 50 microns and 100 microns.
11. The pad conditioning assembly of claim 1 , wherein the one or more channels have non-parallel sidewalls that diverge in width from an inner diameter of the backing plate towards an outer diameter of the backing plate.
12. The pad conditioning assembly of claim 1 , wherein the single supporting structure completely covers the central region of said backing plate.
13. A CMP pad conditioning assembly comprising:
a backing plate that has a first face and a second face, said backing plate includes a mounting structure on the second face; said mounting structure secures the backing plate to a chemical mechanical planarization tool;
one or more abrasive regions on the first face of said backing plate that comprise one or more protrusions, tops of said protrusions reside in a first plane that has a first average height measured from the first face of the backing plate;
a single supporting structure on the first face of said backing plate and at least partially covering a central region of said backing plate, said single supporting structure comprising a plurality of supporting segments positioned between said abrasive regions and separated from said abrasive regions, said single supporting structure having a top surface, the top surface of said single supporting structure residing in a second plane that has a second average height measured from the first face of the backing plate, wherein the first average height of the first plane is greater than the second average height of the second plane; and
one or more channels positioned between one or more of the supporting segments of the single supporting structure and the one or more abrasive regions, the one or more channels having parallel sidewalls configured to allow flow of CMP pad debris, slurry or liquid away from the CMP pad conditioning assembly.