IP Library Granted Patent US 9,997,676
Granted Patent B2
US 9,997,676 · App. 15/268,654 · Granted Jun 12, 2018

Light emitting device and manufacturing method thereof

Inventors: Cheng-Wei Hung (Tainan, TW); Chin-Hua Hung (Tainan, TW); Long-Chi Du (Tainan, TW); Jui-Fu Chang (Tainan, TW); Po-Tsun Kuo (Chiayi, TW); Hao-Chung Lee (Tainan, TW); Yu-Feng Lin (Tainan, TW)
Assignee: Genesis Photonics Inc.
H01L33/502H01L33/38H01L33/46H01L33/50H01L33/56H01L21/568H01L25/0753H01L33/504H01L33/508H01L2224/04105H01L2224/18H01L2224/32225H01L2224/73267H01L2224/9222H01L2224/96H01L2224/97H01L2924/12041H01L2924/18162H01L2933/005H01L2933/0016H01L2933/0025H01L2933/0041
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Quick Facts
Patent No.
US 9,997,676
App. No.
15/268,654
Granted
Jun 12, 2018
Kind
B2
Abstract

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Claims (14)

1. A manufacturing method of a light emitting device, comprising:

providing a wavelength conversion layer;

disposing a plurality of light emitting units arranged at intervals on the wavelength conversion layer, and exposing two electrode pads of each light emitting unit;

forming a plurality of trenches on the wavelength conversion layer by removing a portion of the wavelength conversion layer, wherein the trenches are located between the light emitting units, and a depth of each trench is smaller than a thickness of the wavelength conversion layer;

forming a reflective protecting element on the wavelength conversion layer and between the light emitting units, and filling the reflective protecting element in the trenches, wherein the reflective protecting element exposes the electrode pads of the light emitting units; and

performing a cutting process by cutting the wavelength conversion layer and the reflective protecting element along the trenches to form a plurality of light emitting devices, wherein a lateral surface of each light emitting device exposes a portion of the wavelength conversion layer and a profile of each trench filled with a portion of the reflective protecting element.

2. The manufacturing method of the light emitting device as claimed in claim 1 , wherein the depth of each trench is at least a half of the thickness of the wavelength conversion layer.

3. The manufacturing method of the light emitting device as claimed in claim 1 further comprising:

forming a light transmissible layer on the wavelength conversion layer after disposing the light emitting units arranged at intervals on the wavelength conversion layer.

4. The manufacturing method of the light emitting device as claimed in claim 1 further comprising:

forming a light transmissible layer on the wavelength conversion layer before disposing the light emitting units arranged at intervals on the wavelength conversion layer.

5. The manufacturing method of the light emitting device as claimed in claim 1 , wherein the reflective protecting element further comprises a reflective surface in contact with the light emitting unit.

6. The manufacturing method of the light emitting device as claimed in claim 5 , wherein the reflective surface of the reflective protecting element is a flat surface or a curved surface.

7. The manufacturing method of the light emitting device as claimed in claim 1 , wherein the wavelength conversion layer further comprises a low concentration fluorescent layer and a high concentration fluorescent layer, the light emitting units are disposed on the high concentration fluorescent layer.

Assignments (3)
ADDRESS CHANGE REGISTRATION FORM Recorded Dec 15, 2023
From: GENESIS PHOTONICS INC.
To: GENESIS PHOTONICS INC.
Reel/Frame 066044/0133 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2023
From: GENESIS PHOTONICS INC.
To: NICHIA CORPORATION
Reel/Frame 066044/0807 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2016
From: HUNG, CHENG-WEI; HUNG, CHIN-HUA; DU, LONG-CHI; CHANG, JUI-FU; KUO, PO-TSUN; LEE, HAO-CHUNG; LIN, YU-FENG
To: GENESIS PHOTONICS INC.
Reel/Frame 039822/0546 →
Priority Claims (3)
TW 103116987 A · May 14, 2014 · national
TW 105100499 A · Jan 8, 2016 · national
CN 2016 1 0293182 · May 5, 2016 · national
Continuity (7)
Continuation In Part 14711798 · May 14, 2015
Provisional Application 62157450 · May 5, 2015
Provisional Application 62220249 · Sep 18, 2015
Provisional Application 62236150 · Oct 2, 2015
Provisional Application 62245247 · Oct 22, 2015
Provisional Application 62262876 · Dec 3, 2015
Related Publication 20170005238A1 · Jan 5, 2017